IV1Q12050T3 Inventchip

Description: SIC MOSFET, 1200V 50MOHM, TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V, Power Dissipation (Max): 327W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 6mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V.