Технічний опис LL4003GL0 Taiwan Semiconductor
Description: DIODE GEN PURP 200V 1A MELF, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції LL4003GL0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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LL4003G L0 | Виробник : Taiwan Semiconductor |
 Diode Small Signal Switching Si 200V 1A 2-Pin MELF T/R |
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| LL4003G L0 | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товар відсутній |
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LL4003G L0 | Виробник : Taiwan Semiconductor |
Rectifiers 1A, 200V, Standard Recovery Rectifier |
товар відсутній |