LTTH806RF5 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: DIODE GEN PURP 600V 8A F5
Packaging: Bulk
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: F5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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Технічний опис LTTH806RF5 Diodes Incorporated
Description: DIODE GEN PURP 600V 8A F5, Packaging: Bulk, Package / Case: 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 45 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: F5, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.