MHTG1200HSR3 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF POWER GAN TRANSISTOR, 300 W C
Packaging: Tape & Reel (TR)
Package / Case: NI-780S-4L
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
Configuration: 2 N-Channel
Power - Output: 300W
Technology: GaN
Supplier Device Package: NI-780S-4L
Part Status: Active
Voltage - Rated: 50 V
Description: RF POWER GAN TRANSISTOR, 300 W C
Packaging: Tape & Reel (TR)
Package / Case: NI-780S-4L
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
Configuration: 2 N-Channel
Power - Output: 300W
Technology: GaN
Supplier Device Package: NI-780S-4L
Part Status: Active
Voltage - Rated: 50 V
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Технічний опис MHTG1200HSR3 NXP USA Inc.
Description: RF POWER GAN TRANSISTOR, 300 W C, Packaging: Tape & Reel (TR), Package / Case: NI-780S-4L, Mounting Type: Surface Mount, Frequency: 2.4GHz ~ 2.5GHz, Configuration: 2 N-Channel, Power - Output: 300W, Technology: GaN, Supplier Device Package: NI-780S-4L, Part Status: Active, Voltage - Rated: 50 V.