Продукція > CEL > NE3512S02-A
NE3512S02-A

NE3512S02-A CEL

RF-Wireless-Brochure.pdf Виробник: CEL
Description: HJ-FET NCH 13.5DB S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
Відгуки про товар
Написати відгук

Технічний опис NE3512S02-A CEL

Description: HJ-FET NCH 13.5DB S02, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 70mA, Frequency: 12GHz, Gain: 13.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.35dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.