RJK0222DNS-00#J5 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8W, 10W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8W, 10W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
на замовлення 340000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 284+ | 71.24 грн |
Відгуки про товар
Написати відгук
Технічний опис RJK0222DNS-00#J5 Renesas Electronics America Inc
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 8W, 10W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 14A, 16A, Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V, Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-DFN (5x6), Part Status: Active.