RJK0331DPB-01#J0 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис RJK0331DPB-01#J0 Renesas Electronics America Inc
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V, Power Dissipation (Max): 50W (Tc), Supplier Device Package: LFPAK, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V.