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RJK5012DPP-MG#T2 Renesas


RNCCS08199-1.pdf?t.download=true&u=5oefqw Виробник: Renesas
Description: RJK5012DPP - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 478 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
141+153.05 грн
Мінімальне замовлення: 141
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Технічний опис RJK5012DPP-MG#T2 Renesas

Description: RJK5012DPP - N CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220FN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.