RJK60S5DPE-00#J3 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 20A 4LDPAK, Packaging: Bulk, Package / Case: SC-83, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: LDPAK, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.