Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36868) > Сторінка 302 з 615
| Фото | Назва | Виробник | Інформація |
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| VS-ST380CH04C1 | Vishay General Semiconductor - Diodes Division |
 Description: SCR 400V 2220A TO200AB |
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VS-ST730C12L1 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 2000A B-PUK |
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VS-ST730C12L1L | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 2000A B-PUK |
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VS-ST730C16L0L | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 2000A B-PUK Packaging: Bulk Package / Case: TO-200AC, B-PUK Mounting Type: Clamp On SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 600 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A Current - On State (It (AV)) (Max): 990 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.62 V Current - Off State (Max): 80 mA Supplier Device Package: TO-200AC, B-PUK Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| VS-STT170M14MPBF | Vishay General Semiconductor - Diodes Division | Description: MODULE DIODE MAP COMPRESSED |
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| VS-T50RIA120S90 | Vishay General Semiconductor - Diodes Division |
Description: DIODE T-MODULE 1200V 50A D-55 Packaging: Bulk Package / Case: D-55 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 80 A Voltage - Off State: 1.2 kV |
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| VS-T50RIA60S90 | Vishay General Semiconductor - Diodes Division |
Description: DIODE T-MODULE 600V 50A D-55 Packaging: Bulk Package / Case: D-55 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 80 A Voltage - Off State: 600 V |
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VS-T70HFL10S10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 70 A Current - Reverse Leakage @ Vr: 20 mA @ 100 V |
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VS-UFB120FA20P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 60A SOT227 |
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VS-UFB120FA40P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 60A SOT227 |
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VS-UFB120FA60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 65A SOT227 |
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VS-UFB130FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 87A SOT227 |
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VS-UFB170FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 94A SOT227 |
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VS-UFB200CB40P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 142A SOT227 |
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VS-UFB200FA20P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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VS-UFB200FA40P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 400V 202A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 93 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 202A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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VS-UFB200FA60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 126A SOT227 |
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VS-UFB201FA40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 120A SOT227 |
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VS-UFB210FA40P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 210A SOT227 |
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VS-UFB250FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 168A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 166 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 168A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 100 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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VS-UFB310CB40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 155A SOT227 |
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VS-UFB60FA20P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 30A SOT227 |
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VS-UFB60FA40P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 30A SOT227 |
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VS-UFB60FA60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 44A SOT227 |
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VS-UFB80FA40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 40A SOT227 |
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VS-UFB80FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 57A SOT227 |
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VS-UFL200CB60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 142A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 141 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 142A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-UFL200FA60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 144A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 141 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 144A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-UFL250CB60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 130A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 104 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 130A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-UFL60FA60P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 48A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 157 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 48A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-VSKC196/04PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 97.5A INTAPAK Packaging: Bulk Package / Case: INT-A-PAK Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 97.5A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 20 mA @ 400 V |
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VS-VSKC56/06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A ADDAPAK |
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VS-VSKC56/08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 30A ADDAPAK |
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VS-VSKC56/10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1KV 30A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 10 mA @ 1000 V |
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VS-VSKC56/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 1.2KV 30A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
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VS-VSKC56/14 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 30A ADDAPAK |
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VS-VSKC56/16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 30A ADDAPAK |
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VS-VSKC71/04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 40A ADDAPAK |
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VS-VSKC71/06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 40A ADDAPAK |
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VS-VSKC71/08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 40A ADDAPAK |
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VS-VSKC71/10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 40A ADDAPAK |
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VS-VSKC71/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 40A ADDAPAK |
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VS-VSKC71/14 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 40A ADDAPAK |
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VS-VSKC71/16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 40A ADDAPAK |
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VS-VSKC91/04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 50A ADDAPAK |
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VS-VSKC91/06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 50A ADDAPAK |
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VS-VSKC91/08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 800V 50A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
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VS-VSKC91/10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 50A ADDAPAK |
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VS-VSKC91/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK |
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VS-VSKC91/14 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 50A ADDAPAK |
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VS-VSKC91/16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 50A ADDAPAK |
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VS-VSKCS200/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 100 A Current - Reverse Leakage @ Vr: 10 mA @ 45 V |
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VS-VSKCS201/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A ADDAPAK |
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VS-VSKCS203/100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 100A ADDAPAK |
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VS-VSKCS208/060 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 100A ADDAPAK |
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VS-VSKCS220/030 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 110A ADDAPAK |
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VS-VSKCS301/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 150A ADDAPAK |
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VS-VSKCS303/100 | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 100V 150A ADDAPAK |
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VS-VSKCS330/030 | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTT 30V 165A ADDAPAK |
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VS-VSKCU300/06PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 435A INTAPAK Packaging: Bulk Package / Case: INT-A-PAK Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 435A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| VS-ST380CH04C1 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 2220A TO200AB
Description: SCR 400V 2220A TO200AB
товар відсутній
| VS-ST730C12L1 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 2000A B-PUK
Description: SCR 1.2KV 2000A B-PUK
товар відсутній
| VS-ST730C12L1L |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 2000A B-PUK
Description: SCR 1.2KV 2000A B-PUK
товар відсутній
| VS-ST730C16L0L |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 2000A B-PUK
Packaging: Bulk
Package / Case: TO-200AC, B-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A
Current - On State (It (AV)) (Max): 990 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.62 V
Current - Off State (Max): 80 mA
Supplier Device Package: TO-200AC, B-PUK
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 2000A B-PUK
Packaging: Bulk
Package / Case: TO-200AC, B-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A
Current - On State (It (AV)) (Max): 990 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.62 V
Current - Off State (Max): 80 mA
Supplier Device Package: TO-200AC, B-PUK
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9617.61 грн |
| VS-STT170M14MPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE MAP COMPRESSED
Description: MODULE DIODE MAP COMPRESSED
товар відсутній
| VS-T50RIA120S90 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE T-MODULE 1200V 50A D-55
Packaging: Bulk
Package / Case: D-55
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 1.2 kV
Description: DIODE T-MODULE 1200V 50A D-55
Packaging: Bulk
Package / Case: D-55
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 1.2 kV
товар відсутній
| VS-T50RIA60S90 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE T-MODULE 600V 50A D-55
Packaging: Bulk
Package / Case: D-55
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 600 V
Description: DIODE T-MODULE 600V 50A D-55
Packaging: Bulk
Package / Case: D-55
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 600 V
товар відсутній
| VS-T70HFL10S10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 70 A
Current - Reverse Leakage @ Vr: 20 mA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 70 A
Current - Reverse Leakage @ Vr: 20 mA @ 100 V
товар відсутній
| VS-UFB120FA20P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 60A SOT227
Description: DIODE GEN PURP 200V 60A SOT227
товар відсутній
| VS-UFB120FA40P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 60A SOT227
Description: DIODE GEN PURP 400V 60A SOT227
товар відсутній
| VS-UFB120FA60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 65A SOT227
Description: DIODE GEN PURP 600V 65A SOT227
товар відсутній
| VS-UFB130FA60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 87A SOT227
Description: DIODE GEN PURP 600V 87A SOT227
товар відсутній
| VS-UFB170FA60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 94A SOT227
Description: DIODE GEN PURP 600V 94A SOT227
товар відсутній
| VS-UFB200CB40P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 142A SOT227
Description: DIODE GEN PURP 400V 142A SOT227
товар відсутній
| VS-UFB200FA20P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| VS-UFB200FA40P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 400V 202A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 202A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE MODULE GP 400V 202A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 202A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
| VS-UFB200FA60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 126A SOT227
Description: DIODE GEN PURP 600V 126A SOT227
товар відсутній
| VS-UFB201FA40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 120A SOT227
Description: DIODE GEN PURP 400V 120A SOT227
товар відсутній
| VS-UFB210FA40P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 210A SOT227
Description: DIODE GEN PURP 400V 210A SOT227
товар відсутній
| VS-UFB250FA60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 168A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 166 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 168A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE MODULE GP 600V 168A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 166 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 168A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1589.37 грн |
| 10+ | 1360.35 грн |
| 100+ | 1189.83 грн |
| VS-UFB310CB40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 155A SOT227
Description: DIODE GEN PURP 400V 155A SOT227
товар відсутній
| VS-UFB60FA20P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 30A SOT227
Description: DIODE GEN PURP 200V 30A SOT227
товар відсутній
| VS-UFB60FA40P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A SOT227
Description: DIODE GEN PURP 400V 30A SOT227
товар відсутній
| VS-UFB60FA60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 44A SOT227
Description: DIODE GEN PURP 600V 44A SOT227
товар відсутній
| VS-UFB80FA40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 40A SOT227
Description: DIODE GEN PURP 400V 40A SOT227
товар відсутній
| VS-UFB80FA60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 57A SOT227
Description: DIODE GEN PURP 600V 57A SOT227
товар відсутній
| VS-UFL200CB60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 142A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 141 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 142A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE MODULE GP 600V 142A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 141 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 142A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| VS-UFL200FA60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 144A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 141 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 144A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 144A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 141 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 144A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| VS-UFL250CB60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 130A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 130A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 130A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 130A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| VS-UFL60FA60P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 48A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 157 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 48A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 48A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 157 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 48A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| VS-VSKC196/04PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 97.5A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 97.5A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
Description: DIODE MOD GP 400V 97.5A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 97.5A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
товар відсутній
| VS-VSKC56/06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A ADDAPAK
Description: DIODE GEN PURP 600V 30A ADDAPAK
товар відсутній
| VS-VSKC56/08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 30A ADDAPAK
Description: DIODE GEN PURP 800V 30A ADDAPAK
товар відсутній
| VS-VSKC56/10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Description: DIODE MODULE GP 1KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
товар відсутній
| VS-VSKC56/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1.2KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
товар відсутній
| VS-VSKC56/14 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 30A ADDAPAK
Description: DIODE GEN PURP 1.4KV 30A ADDAPAK
товар відсутній
| VS-VSKC56/16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 30A ADDAPAK
Description: DIODE GEN PURP 1.6KV 30A ADDAPAK
товар відсутній
| VS-VSKC71/04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 40A ADDAPAK
Description: DIODE GEN PURP 400V 40A ADDAPAK
товар відсутній
| VS-VSKC71/06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 40A ADDAPAK
Description: DIODE GEN PURP 600V 40A ADDAPAK
товар відсутній
| VS-VSKC71/08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 40A ADDAPAK
Description: DIODE GEN PURP 800V 40A ADDAPAK
товар відсутній
| VS-VSKC71/10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 40A ADDAPAK
Description: DIODE GEN PURP 1KV 40A ADDAPAK
товар відсутній
| VS-VSKC71/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 40A ADDAPAK
Description: DIODE GEN PURP 1.2KV 40A ADDAPAK
товар відсутній
| VS-VSKC71/14 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 40A ADDAPAK
Description: DIODE GEN PURP 1.4KV 40A ADDAPAK
товар відсутній
| VS-VSKC71/16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A ADDAPAK
Description: DIODE GEN PURP 1.6KV 40A ADDAPAK
товар відсутній
| VS-VSKC91/04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 50A ADDAPAK
Description: DIODE GEN PURP 400V 50A ADDAPAK
товар відсутній
| VS-VSKC91/06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 50A ADDAPAK
Description: DIODE GEN PURP 600V 50A ADDAPAK
товар відсутній
| VS-VSKC91/08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 800V 50A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE GP 800V 50A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
товар відсутній
| VS-VSKC91/10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 50A ADDAPAK
Description: DIODE GEN PURP 1KV 50A ADDAPAK
товар відсутній
| VS-VSKC91/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK
товар відсутній
| VS-VSKC91/14 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 50A ADDAPAK
Description: DIODE GEN PURP 1.4KV 50A ADDAPAK
товар відсутній
| VS-VSKC91/16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 50A ADDAPAK
Description: DIODE GEN PURP 1.6KV 50A ADDAPAK
товар відсутній
| VS-VSKCS200/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
товар відсутній
| VS-VSKCS201/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
товар відсутній
| VS-VSKCS203/100 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 100A ADDAPAK
Description: DIODE SCHOTTKY 100V 100A ADDAPAK
товар відсутній
| VS-VSKCS208/060 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
товар відсутній
| VS-VSKCS220/030 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 110A ADDAPAK
Description: DIODE SCHOTTKY 30V 110A ADDAPAK
товар відсутній
| VS-VSKCS301/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 150A ADDAPAK
Description: DIODE SCHOTTKY 45V 150A ADDAPAK
товар відсутній
| VS-VSKCS303/100 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 150A ADDAPAK
Description: DIODE SCHOTTKY 100V 150A ADDAPAK
товар відсутній
| VS-VSKCS330/030 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 30V 165A ADDAPAK
Description: DIODE SCHOTT 30V 165A ADDAPAK
товар відсутній
| VS-VSKCU300/06PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 435A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 435A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE MOD GP 600V 435A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 435A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12891.92 грн |
| 15+ | 11627.93 грн |