Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3601) > Сторінка 16 з 61
Фото | Назва | Виробник | Інформація |
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AS4C32M8SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C32M8SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C32M8SA-6TIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 32M x 8 SDRAM |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 108 шт: термін постачання 7-14 дні (днів) |
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AS4C32M8SA-6TINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 32M x 8 SDRAM |
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AS4C32M8SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C32M8SA-7TCN | Alliance Memory | DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray |
на замовлення 10302 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 108 шт: термін постачання 7-14 дні (днів) |
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AS4C32M8SA-7TCNTR | Alliance Memory | DRAM 256Mb, 3.3V, 143Mhz 32M x 8 SDRAM |
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AS4C32M8SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16D1-5TCN | Alliance Memory | DRAM 64Mb, 3.3V, 200Mhz 4M x 16 DDR |
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AS4C4M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Kind of memory: SDRAM Memory: 64Mb DRAM Operating temperature: -40...105°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 4Mx16bit Type of integrated circuit: DRAM memory Case: TSOP66 II |
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AS4C4M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TAN | Alliance Memory | DRAM |
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AS4C4M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TANTR | Alliance Memory | DRAM |
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AS4C4M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Kind of memory: SDRAM Memory: 64Mb DRAM Operating temperature: -40...105°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 4Mx16bit Type of integrated circuit: DRAM memory Case: TSOP66 II кількість в упаковці: 1000 шт |
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AS4C4M16D1A-5TCN | Alliance Memory | DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A) |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C4M16D1A-5TCNTR | Alliance Memory | DRAM |
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AS4C4M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TIN | Alliance Memory | DRAM |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C4M16D1A-5TINTR | Alliance Memory | DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel |
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AS4C4M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16S-6BIN | Alliance Memory | DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16S-6TAN | Alliance Memory | DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16S-6TCN | Alliance Memory | DRAM 64M SDRAM 4M X 16 166MHz |
на замовлення 1049 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Access time: 4.5ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 3757 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7B2CN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7B2CNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 5384 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 1431 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCN | Alliance Memory | DRAM 64M 3.3V 200MHz 4M x 16 SDRAM |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCNTR | Alliance Memory | DRAM 64M 3.3V 200MHz 4M x 16 SDRAM |
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AS4C4M16SA-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Access time: 4.5ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-6BAN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 105°C usEccn: EAR99 |
на замовлення 346 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-6BAN | Alliance Memory | DRAM |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-6BANTR | Alliance Memory | DRAM |
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AS4C4M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-6BIN | Alliance Memory | DRAM |
на замовлення 2536 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 392.46 грн |
3+ | 250.5 грн |
9+ | 236.77 грн |
AS4C32M8SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M8SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 323.72 грн |
4+ | 206.58 грн |
10+ | 195.6 грн |
AS4C32M8SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M8SA-6TIN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 32M x 8 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 32M x 8 SDRAM
на замовлення 2 шт:
термін постачання 21-30 дні (днів)AS4C32M8SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 108 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 470.95 грн |
3+ | 312.16 грн |
9+ | 284.13 грн |
AS4C32M8SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M8SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
на замовлення 10302 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 300.55 грн |
10+ | 261.4 грн |
108+ | 171.3 грн |
216+ | 164.71 грн |
540+ | 164.05 грн |
2592+ | 163.4 грн |
5076+ | 160.76 грн |
AS4C32M8SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 108 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 388.47 грн |
4+ | 257.43 грн |
10+ | 234.72 грн |
AS4C32M8SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Kind of memory: SDRAM
Memory: 64Mb DRAM
Operating temperature: -40...105°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 4Mx16bit
Type of integrated circuit: DRAM memory
Case: TSOP66 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Kind of memory: SDRAM
Memory: 64Mb DRAM
Operating temperature: -40...105°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 4Mx16bit
Type of integrated circuit: DRAM memory
Case: TSOP66 II
товар відсутній
AS4C4M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Kind of memory: SDRAM
Memory: 64Mb DRAM
Operating temperature: -40...105°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 4Mx16bit
Type of integrated circuit: DRAM memory
Case: TSOP66 II
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Kind of memory: SDRAM
Memory: 64Mb DRAM
Operating temperature: -40...105°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 4Mx16bit
Type of integrated circuit: DRAM memory
Case: TSOP66 II
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16D1A-5TCN |
Виробник: Alliance Memory
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
на замовлення 189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 202.93 грн |
10+ | 176.54 грн |
108+ | 133.09 грн |
540+ | 122.55 грн |
1080+ | 121.89 грн |
2592+ | 110.69 грн |
10044+ | 108.71 грн |
AS4C4M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C4M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 82 шт:
термін постачання 21-30 дні (днів)AS4C4M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: Alliance Memory
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16S-6BIN |
Виробник: Alliance Memory
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
на замовлення 767 шт:
термін постачання 21-30 дні (днів)AS4C4M16S-6TAN |
Виробник: Alliance Memory
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
на замовлення 90 шт:
термін постачання 21-30 дні (днів)AS4C4M16S-6TCN |
Виробник: Alliance Memory
DRAM 64M SDRAM 4M X 16 166MHz
DRAM 64M SDRAM 4M X 16 166MHz
на замовлення 1049 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 200.29 грн |
5+ | 165.4 грн |
6+ | 136.57 грн |
15+ | 129.02 грн |
108+ | 124.91 грн |
AS4C4M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 3757 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.38 грн |
5+ | 201.77 грн |
6+ | 138.63 грн |
15+ | 131.08 грн |
AS4C4M16SA-7B2CN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7B2CNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 5384 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.95 грн |
5+ | 179.13 грн |
7+ | 122.85 грн |
17+ | 116.67 грн |
216+ | 115.3 грн |
AS4C4M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 1431 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.12 грн |
5+ | 181.87 грн |
6+ | 124.91 грн |
17+ | 118.04 грн |
AS4C4M16SA-5TCN |
Виробник: Alliance Memory
DRAM 64M 3.3V 200MHz 4M x 16 SDRAM
DRAM 64M 3.3V 200MHz 4M x 16 SDRAM
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 232.14 грн |
10+ | 206.09 грн |
25+ | 175.91 грн |
108+ | 171.3 грн |
216+ | 147.58 грн |
1080+ | 146.92 грн |
2592+ | 139.68 грн |
AS4C4M16SA-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6BAN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-6BAN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
на замовлення 346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 273.47 грн |
10+ | 236.51 грн |
25+ | 220.99 грн |
50+ | 197.66 грн |
100+ | 177.38 грн |
250+ | 175.48 грн |
AS4C4M16SA-6BAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 548 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 325.91 грн |
10+ | 291.71 грн |
25+ | 246.41 грн |
50+ | 240.48 грн |
AS4C4M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 243.9 грн |
10+ | 210.64 грн |
25+ | 197.34 грн |
50+ | 176.38 грн |
100+ | 157.74 грн |
AS4C4M16SA-6BIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 2536 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 272.87 грн |
10+ | 243.97 грн |
25+ | 208.2 грн |
50+ | 206.88 грн |
100+ | 185.8 грн |
250+ | 184.48 грн |
348+ | 177.89 грн |