Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3572) > Сторінка 6 з 60
Фото | Назва | Виробник | Інформація |
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AS4C16M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: reel Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
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AS4C16M16MSA-6BIN | Alliance Memory | DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT |
на замовлення 479 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
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AS4C16M16MSA-6BINTR | Alliance Memory | DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT |
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AS4C16M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: reel Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
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AS4C16M16S-6BIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16S-6TAN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16S-6TCN | Alliance Memory | DRAM 256M SDRAM 16M X 16 166MHz |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16S-6TIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
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AS4C16M16S-6TIN | Alliance Memory | Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54 |
на замовлення 26 шт: термін постачання 2-3 дні (днів) |
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AS4C16M16S-6TINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
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AS4C16M16S-7TCN | Alliance Memory | DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C16M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 1410 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TFBGA55 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C16M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 706 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Quantity in set/package: 1000pcs. Operating voltage: 3.3V |
на замовлення 2656 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6BAN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray |
на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 105°C usEccn: EAR99 |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 348 шт |
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AS4C16M16SA-6BAN | Alliance Memory | Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54 |
на замовлення 3 шт: термін постачання 2-3 дні (днів) |
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AS4C16M16SA-6BANTR | Alliance Memory | DRAM |
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AS4C16M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-6BIN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray |
на замовлення 2594 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V кількість в упаковці: 348 шт |
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AS4C16M16SA-6BINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 825 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C16M16SA-6TAN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C16M16SA-6TANTR | Alliance Memory | DRAM |
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AS4C16M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C16M16SA-6TCN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray |
на замовлення 726 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 201 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16SA-6TCNTR | Alliance Memory | DRAM |
на замовлення 1918 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C16M16SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-6TIN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray |
на замовлення 5440 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 1410 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16SA-6TINTR | Alliance Memory | DRAM |
на замовлення 2723 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TINTR | ALLIANCE MEMORY | AS4C16M16SA-6TINTR DRAM memories - integrated circuits |
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AS4C16M16SA-7BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-7BCN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray |
на замовлення 397 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TFBGA55 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V кількість в упаковці: 348 шт |
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AS4C16M16SA-7BCNTR | Alliance Memory | DRAM |
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AS4C16M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C16M16SA-7TCN | Alliance Memory | DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray |
на замовлення 12078 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 706 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16SA-7TCNTR | Alliance Memory | DRAM |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Quantity in set/package: 1000pcs. Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 2656 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16MSA-6BIN |
Виробник: Alliance Memory
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
на замовлення 479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 567.92 грн |
10+ | 515.81 грн |
25+ | 439.3 грн |
50+ | 437.98 грн |
100+ | 392.47 грн |
250+ | 380.59 грн |
500+ | 361.47 грн |
AS4C16M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16MSA-6BINTR |
Виробник: Alliance Memory
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C16M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16S-6BIN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 1 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TAN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 109 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TCN |
Виробник: Alliance Memory
DRAM 256M SDRAM 16M X 16 166MHz
DRAM 256M SDRAM 16M X 16 166MHz
на замовлення 47 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TIN |
Виробник: Alliance Memory
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54
на замовлення 26 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 172.15 грн |
10+ | 160.68 грн |
100+ | 149.2 грн |
AS4C16M16S-7TCN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
на замовлення 972 шт:
термін постачання 21-30 дні (днів)AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 349.99 грн |
4+ | 232.24 грн |
10+ | 219.87 грн |
AS4C16M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 1410 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 348.51 грн |
4+ | 215.75 грн |
11+ | 204.07 грн |
108+ | 202.01 грн |
AS4C16M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 706 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 304.12 грн |
4+ | 198.57 грн |
11+ | 187.58 грн |
108+ | 182.08 грн |
AS4C16M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
на замовлення 2656 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 307.82 грн |
4+ | 212.31 грн |
11+ | 200.63 грн |
1000+ | 197.88 грн |
AS4C16M16SA-6BAN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray
на замовлення 773 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 436.33 грн |
10+ | 347.42 грн |
250+ | 301.44 грн |
348+ | 281.65 грн |
1044+ | 269.78 грн |
2784+ | 265.16 грн |
5220+ | 257.91 грн |
AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
на замовлення 48 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 451.37 грн |
10+ | 389.95 грн |
25+ | 364.79 грн |
AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-6BAN |
Виробник: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54
на замовлення 3 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 454.32 грн |
10+ | 424.04 грн |
100+ | 393.74 грн |
AS4C16M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 421.77 грн |
10+ | 364.05 грн |
25+ | 341.11 грн |
50+ | 304.38 грн |
100+ | 273.36 грн |
AS4C16M16SA-6BIN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
на замовлення 2594 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 410.17 грн |
10+ | 325.42 грн |
250+ | 281.65 грн |
348+ | 263.18 грн |
1044+ | 251.97 грн |
2784+ | 248.01 грн |
5220+ | 236.8 грн |
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-6BINTR |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 420.94 грн |
10+ | 377.76 грн |
100+ | 287.59 грн |
250+ | 286.27 грн |
500+ | 268.46 грн |
1000+ | 257.25 грн |
2500+ | 248.67 грн |
AS4C16M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-6TAN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
на замовлення 403 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 449.41 грн |
10+ | 393.69 грн |
108+ | 307.38 грн |
216+ | 305.4 грн |
540+ | 286.27 грн |
1080+ | 274.4 грн |
5076+ | 269.78 грн |
AS4C16M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16SA-6TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray
на замовлення 726 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 301.66 грн |
10+ | 262.46 грн |
108+ | 203.82 грн |
216+ | 203.16 грн |
540+ | 186.01 грн |
2592+ | 180.73 грн |
5076+ | 172.16 грн |
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 295.98 грн |
10+ | 255.28 грн |
25+ | 239 грн |
50+ | 213.69 грн |
100+ | 191.54 грн |
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 201 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 419.99 грн |
4+ | 289.4 грн |
10+ | 263.84 грн |
AS4C16M16SA-6TCNTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 1918 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 308.59 грн |
10+ | 276.11 грн |
100+ | 209.76 грн |
250+ | 208.44 грн |
500+ | 201.18 грн |
1000+ | 185.35 грн |
5000+ | 177.43 грн |
AS4C16M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 347.77 грн |
10+ | 300.42 грн |
25+ | 281.18 грн |
50+ | 250.79 грн |
100+ | 225.15 грн |
AS4C16M16SA-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 5440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 352.45 грн |
10+ | 316.32 грн |
108+ | 240.1 грн |
216+ | 238.78 грн |
540+ | 230.2 грн |
1080+ | 218.33 грн |
2592+ | 207.78 грн |
AS4C16M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 1410 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 418.22 грн |
4+ | 268.85 грн |
11+ | 244.88 грн |
108+ | 242.41 грн |
AS4C16M16SA-6TINTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 2723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 361.69 грн |
10+ | 323.14 грн |
100+ | 245.37 грн |
250+ | 244.71 грн |
500+ | 235.48 грн |
1000+ | 223.61 грн |
2000+ | 215.69 грн |
AS4C16M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
AS4C16M16SA-6TINTR DRAM memories - integrated circuits
AS4C16M16SA-6TINTR DRAM memories - integrated circuits
товар відсутній
AS4C16M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 348 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 399.57 грн |
10+ | 344.81 грн |
25+ | 322.62 грн |
50+ | 288.58 грн |
100+ | 258.77 грн |
250+ | 256.87 грн |
AS4C16M16SA-7BCN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
на замовлення 397 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 388.62 грн |
10+ | 307.21 грн |
348+ | 238.12 грн |
1044+ | 237.46 грн |
2784+ | 236.8 грн |
5220+ | 225.59 грн |
10092+ | 222.95 грн |
AS4C16M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 12078 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 301.66 грн |
10+ | 261.7 грн |
108+ | 194.58 грн |
216+ | 190.63 грн |
540+ | 180.07 грн |
1080+ | 179.41 грн |
5076+ | 160.94 грн |
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 96 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 295.98 грн |
10+ | 255.28 грн |
25+ | 239 грн |
50+ | 213.69 грн |
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 706 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 364.94 грн |
4+ | 247.45 грн |
11+ | 225.09 грн |
108+ | 218.5 грн |
AS4C16M16SA-7TCNTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 308.59 грн |
10+ | 276.11 грн |
100+ | 209.76 грн |
250+ | 208.44 грн |
500+ | 201.18 грн |
1000+ | 188.65 грн |
2000+ | 187.99 грн |
AS4C16M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 2656 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 369.38 грн |
4+ | 264.57 грн |
11+ | 240.76 грн |
1000+ | 237.46 грн |