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AS4C16M16SA-7BCNTR AS4C16M16SA-7BCNTR Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM
товар відсутній
AS4C16M16SA-7BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-7TCN AS4C16M16SA-7TCN Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 12078 шт:
термін постачання 21-30 дні (днів)
2+300.56 грн
10+ 260.74 грн
108+ 193.87 грн
216+ 189.93 грн
540+ 179.41 грн
1080+ 178.76 грн
5076+ 160.35 грн
Мінімальне замовлення: 2
AS4C16M16SA-7TCN ALLIANCE MEMORY 3999938.pdf Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
3+294.89 грн
10+ 254.35 грн
25+ 238.13 грн
50+ 212.9 грн
Мінімальне замовлення: 3
AS4C16M16SA-7TCN AS4C16M16SA-7TCN ALLIANCE MEMORY as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 706 шт:
термін постачання 7-14 дні (днів)
1+363.6 грн
4+ 246.54 грн
11+ 224.27 грн
108+ 217.69 грн
AS4C16M16SA-7TCNTR AS4C16M16SA-7TCNTR Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM
на замовлення 840 шт:
термін постачання 21-30 дні (днів)
1+307.46 грн
10+ 275.1 грн
100+ 208.99 грн
250+ 207.67 грн
500+ 200.44 грн
1000+ 187.96 грн
2000+ 187.3 грн
AS4C16M16SA-7TCNTR AS4C16M16SA-7TCNTR ALLIANCE MEMORY as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 2656 шт:
термін постачання 7-14 дні (днів)
1+368.03 грн
4+ 263.6 грн
11+ 239.87 грн
1000+ 236.59 грн
AS4C16M16SB-6TIN AS4C16M16SB-6TIN ALLIANCE MEMORY AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR AS4C16M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN AS4C16M16SB-7TCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6BIN ALLIANCE MEMORY 3999940.pdf Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
2+420.22 грн
10+ 362.72 грн
25+ 339.86 грн
50+ 303.27 грн
100+ 272.36 грн
Мінімальне замовлення: 2
AS4C16M16SB-6BIN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
1+453.13 грн
10+ 408.12 грн
25+ 345.03 грн
50+ 337.14 грн
100+ 310.19 грн
250+ 308.88 грн
348+ 288.51 грн
AS4C16M16SB-6TIN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf DRAM
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
1+341.96 грн
10+ 306.09 грн
25+ 258.93 грн
108+ 253.02 грн
AS4C16M16SB-6TIN AS4C16M16SB-6TIN ALLIANCE MEMORY AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf DRAM
товар відсутній
AS4C16M16SB-6TINTR AS4C16M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN AS4C16M16SB-7TCN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM
на замовлення 2516 шт:
термін постачання 21-30 дні (днів)
2+292.12 грн
10+ 254.69 грн
108+ 198.47 грн
216+ 197.16 грн
540+ 189.93 грн
1080+ 185.33 грн
5076+ 166.93 грн
Мінімальне замовлення: 2
AS4C16M16SB-7TCN AS4C16M16SB-7TCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
2+300.56 грн
10+ 268.3 грн
100+ 203.73 грн
250+ 203.07 грн
500+ 195.84 грн
1000+ 189.27 грн
2000+ 178.76 грн
Мінімальне замовлення: 2
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BCN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BIN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BCN Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+453.13 грн
10+ 408.12 грн
25+ 347.65 грн
50+ 345.03 грн
100+ 310.19 грн
250+ 308.22 грн
480+ 288.51 грн
AS4C16M32MD1-5BCN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BIN Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
1+516.77 грн
10+ 465.55 грн
25+ 396.29 грн
50+ 394.31 грн
100+ 353.57 грн
250+ 351.6 грн
480+ 329.25 грн
AS4C16M32MD1-5BIN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MS-6BIN AS4C16M32MS-6BIN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
на замовлення 992 шт:
термін постачання 21-30 дні (днів)
AS4C16M32MS-7BCN AS4C16M32MS-7BCN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
AS4C16M32MSA-6BIN ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BIN AS4C16M32MSA-6BIN Alliance Memory 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
на замовлення 612 шт:
термін постачання 21-30 дні (днів)
1+542.07 грн
10+ 492.01 грн
25+ 417.32 грн
100+ 374.6 грн
190+ 370.66 грн
570+ 345.03 грн
1140+ 333.2 грн
AS4C16M32MSA-6BIN ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR Alliance Memory 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C16M32MSA-6BINTR ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSB-6BIN AS4C16M32MSB-6BIN Alliance Memory AllianceMemory_512M_LPSDRAM_Bdie_AS4C16M32MSB-6BIN(TR)_rev1.0_17Aug2021.pdf DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
товар відсутній
AS4C16M32MSB-6BINTR AS4C16M32MSB-6BINTR Alliance Memory DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
товар відсутній
AS4C16M32SC-7TIN AS4C16M32SC-7TIN ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
1+1081.52 грн
3+ 949.5 грн
108+ 944.03 грн
AS4C16M32SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M32SC-7TIN AS4C16M32SC-7TIN Alliance Memory AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
1+1247.46 грн
10+ 1138.95 грн
25+ 964.1 грн
108+ 941.76 грн
216+ 799.14 грн
540+ 794.54 грн
1080+ 790.6 грн
AS4C16M32SC-7TIN AS4C16M32SC-7TIN ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 7-14 дні (днів)
1+1297.83 грн
3+ 1183.23 грн
108+ 1132.83 грн
AS4C16M32SC-7TINTR AS4C16M32SC-7TINTR Alliance Memory AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C16M32SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C1G16D4-062BCN ALLIANCE MEMORY AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCN ALLIANCE MEMORY ALLM-S-A0017317104-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 16Gbit
hazardous: false
rohsPhthalatesCompliant: TBA
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+1770.84 грн
10+ 1528.29 грн
25+ 1429.5 грн
50+ 1277.42 грн
100+ 1146.29 грн
AS4C1G16D4-062BCN AS4C1G16D4-062BCN Alliance Memory AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
на замовлення 386 шт:
термін постачання 21-30 дні (днів)
1+1558.75 грн
10+ 1430.67 грн
25+ 1200.69 грн
100+ 1054.14 грн
190+ 1039.02 грн
570+ 1011.42 грн
1140+ 964.1 грн
AS4C1G16D4-062BCN ALLIANCE MEMORY AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G8D3LA-10BCN ALLIANCE MEMORY AllianceMemory_DDR3L_8G_AS4C1G8D3LA-10BCN-BIN-BAN_Feb2019_v1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BIN ALLIANCE MEMORY AllianceMemory_DDR3L_8G_AS4C1G8D3LA-10BCN-BIN-BAN_Feb2019_v1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BAN AS4C1G8D3LA-10BAN Alliance Memory AllianceMemory_DDR3L_8G_AS4C1G8D3LA_10BCN_BIN_BAN_-1568537.pdf DRAM 8G - Dual Die Package (DDP) 1G x 8 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 78-ball FBGA (Two 1Gbitx4 dies stacked)
товар відсутній
AS4C16M16SA-7BCNTR 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7BCNTR
Виробник: Alliance Memory
DRAM
товар відсутній
AS4C16M16SA-7BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-7TCN 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7TCN
Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 12078 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+300.56 грн
10+ 260.74 грн
108+ 193.87 грн
216+ 189.93 грн
540+ 179.41 грн
1080+ 178.76 грн
5076+ 160.35 грн
Мінімальне замовлення: 2
AS4C16M16SA-7TCN 3999938.pdf
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+294.89 грн
10+ 254.35 грн
25+ 238.13 грн
50+ 212.9 грн
Мінімальне замовлення: 3
AS4C16M16SA-7TCN as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SA-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 706 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+363.6 грн
4+ 246.54 грн
11+ 224.27 грн
108+ 217.69 грн
AS4C16M16SA-7TCNTR 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7TCNTR
Виробник: Alliance Memory
DRAM
на замовлення 840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+307.46 грн
10+ 275.1 грн
100+ 208.99 грн
250+ 207.67 грн
500+ 200.44 грн
1000+ 187.96 грн
2000+ 187.3 грн
AS4C16M16SA-7TCNTR as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SA-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 2656 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+368.03 грн
4+ 263.6 грн
11+ 239.87 грн
1000+ 236.59 грн
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf
AS4C16M16SB-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR
AS4C16M16SB-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCNTR Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6BIN 3999940.pdf
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+420.22 грн
10+ 362.72 грн
25+ 339.86 грн
50+ 303.27 грн
100+ 272.36 грн
Мінімальне замовлення: 2
AS4C16M16SB-6BIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
Виробник: Alliance Memory
DRAM
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+453.13 грн
10+ 408.12 грн
25+ 345.03 грн
50+ 337.14 грн
100+ 310.19 грн
250+ 308.88 грн
348+ 288.51 грн
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf
Виробник: Alliance Memory
DRAM
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+341.96 грн
10+ 306.09 грн
25+ 258.93 грн
108+ 253.02 грн
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf
AS4C16M16SB-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf
Виробник: Alliance Memory
DRAM
товар відсутній
AS4C16M16SB-6TINTR
AS4C16M16SB-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-7TCN
Виробник: Alliance Memory
DRAM
на замовлення 2516 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+292.12 грн
10+ 254.69 грн
108+ 198.47 грн
216+ 197.16 грн
540+ 189.93 грн
1080+ 185.33 грн
5076+ 166.93 грн
Мінімальне замовлення: 2
AS4C16M16SB-7TCN Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SB-7TCNTR AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-7TCNTR
Виробник: Alliance Memory
DRAM
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+300.56 грн
10+ 268.3 грн
100+ 203.73 грн
250+ 203.07 грн
500+ 195.84 грн
1000+ 189.27 грн
2000+ 178.76 грн
Мінімальне замовлення: 2
AS4C16M16SB-7TCNTR Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+453.13 грн
10+ 408.12 грн
25+ 347.65 грн
50+ 345.03 грн
100+ 310.19 грн
250+ 308.22 грн
480+ 288.51 грн
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+516.77 грн
10+ 465.55 грн
25+ 396.29 грн
50+ 394.31 грн
100+ 353.57 грн
250+ 351.6 грн
480+ 329.25 грн
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MS-6BIN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C16M32MS-6BIN
Виробник: Alliance Memory
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
на замовлення 992 шт:
термін постачання 21-30 дні (днів)
AS4C16M32MS-7BCN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C16M32MS-7BCN
Виробник: Alliance Memory
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf
AS4C16M32MSA-6BIN
Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
на замовлення 612 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+542.07 грн
10+ 492.01 грн
25+ 417.32 грн
100+ 374.6 грн
190+ 370.66 грн
570+ 345.03 грн
1140+ 333.2 грн
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf
AS4C16M32MSA-6BINTR
Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSB-6BIN AllianceMemory_512M_LPSDRAM_Bdie_AS4C16M32MSB-6BIN(TR)_rev1.0_17Aug2021.pdf
AS4C16M32MSB-6BIN
Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
товар відсутній
AS4C16M32MSB-6BINTR
AS4C16M32MSB-6BINTR
Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
товар відсутній
AS4C16M32SC-7TIN AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C16M32SC-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1081.52 грн
3+ 949.5 грн
108+ 944.03 грн
AS4C16M32SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M32SC-7TIN AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf
AS4C16M32SC-7TIN
Виробник: Alliance Memory
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1247.46 грн
10+ 1138.95 грн
25+ 964.1 грн
108+ 941.76 грн
216+ 799.14 грн
540+ 794.54 грн
1080+ 790.6 грн
AS4C16M32SC-7TIN AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C16M32SC-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1297.83 грн
3+ 1183.23 грн
108+ 1132.83 грн
AS4C16M32SC-7TINTR AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf
AS4C16M32SC-7TINTR
Виробник: Alliance Memory
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C16M32SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C1G16D4-062BCN AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCN ALLM-S-A0017317104-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 16Gbit
hazardous: false
rohsPhthalatesCompliant: TBA
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1770.84 грн
10+ 1528.29 грн
25+ 1429.5 грн
50+ 1277.42 грн
100+ 1146.29 грн
AS4C1G16D4-062BCN AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf
AS4C1G16D4-062BCN
Виробник: Alliance Memory
DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
на замовлення 386 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1558.75 грн
10+ 1430.67 грн
25+ 1200.69 грн
100+ 1054.14 грн
190+ 1039.02 грн
570+ 1011.42 грн
1140+ 964.1 грн
AS4C1G16D4-062BCN AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G8D3LA-10BCN AllianceMemory_DDR3L_8G_AS4C1G8D3LA-10BCN-BIN-BAN_Feb2019_v1.0.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BIN AllianceMemory_DDR3L_8G_AS4C1G8D3LA-10BCN-BIN-BAN_Feb2019_v1.0.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BAN AllianceMemory_DDR3L_8G_AS4C1G8D3LA_10BCN_BIN_BAN_-1568537.pdf
AS4C1G8D3LA-10BAN
Виробник: Alliance Memory
DRAM 8G - Dual Die Package (DDP) 1G x 8 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 78-ball FBGA (Two 1Gbitx4 dies stacked)
товар відсутній
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