Продукція > ADVANCED LINEAR DEVICES INC. > Всі товари виробника ADVANCED LINEAR DEVICES INC. (521) > Сторінка 3 з 9
| Фото | Назва | Виробник | Інформація |
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ALD1721EPAL | Advanced Linear Devices Inc. |
 Description: IC OPAMP GP 1MHZ RRO 8DIP |
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ALD1721ESAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1MHZ RRO 8SOIC |
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ALD1721GPAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Rail-to-Rail Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 110µA Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 0.01 pA Voltage - Input Offset: 150 µV Supplier Device Package: 8-PDIP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 1 mA Voltage - Supply Span (Min): 2 V Voltage - Supply Span (Max): 10 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ALD1721GSAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 110µA Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 0.01 pA Voltage - Input Offset: 150 µV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 1 mA Voltage - Supply Span (Min): 2 V Voltage - Supply Span (Max): 10 V |
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ALD1721PAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1MHZ RRO 8DIP |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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ALD1721SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1MHZ RRO 8SOIC |
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ALD1722EPA | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.7MHZ RRO 8DIP |
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ALD1722ESAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC |
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ALD1722GPAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.7MHZ RRO 8DIP |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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ALD1722GSAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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ALD1722PAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.7MHZ RRO 8DIP |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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ALD1722SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 800µA Slew Rate: 2.8V/µs Gain Bandwidth Product: 1.7 MHz Current - Input Bias: 0.01 pA Voltage - Input Offset: 25 µV Supplier Device Package: 8-SOIC Number of Circuits: 1 Current - Output / Channel: 8 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 10 V |
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| ALD1724EPAL | Advanced Linear Devices Inc. | Description: IC OP AMP EPAD 8DIP |
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| ALD1724ESAL | Advanced Linear Devices Inc. | Description: IC OP AMP EPAD 8SOIC |
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| ALD1724PAL | Advanced Linear Devices Inc. | Description: IC OP AMP EPAD 8DIP |
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| ALD1724SAL | Advanced Linear Devices Inc. | Description: IC OP AMP EPAD 8SOIC |
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ALD1726EPAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8DIP |
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ALD1726ESAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8SOIC |
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ALD1726GPAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8DIP |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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ALD1726GSAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC |
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ALD1726PAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8DIP |
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ALD1726SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8SOIC |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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ALD1731APAL | Advanced Linear Devices Inc. | Description: IC OPAMP GP 1 CIRCUIT 8DIP |
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ALD1731ASAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC |
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ALD1731PAL | Advanced Linear Devices Inc. | Description: IC OPAMP GP 1 CIRCUIT 8DIP |
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ALD1731SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC |
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ALD1732APAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.5MHZ RRO 8DIP |
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ALD1732ASAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Slew Rate: 2.1V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 10 pA Voltage - Input Offset: 100 µV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 10 V |
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ALD1732PAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.5MHZ RRO 8DIP |
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ALD1732SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 1.5MHZ RRO 8SOIC |
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ALD1736APAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8DIP |
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ALD1736ASAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8SOIC |
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ALD1736PAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8DIP |
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ALD1736SAL | Advanced Linear Devices Inc. |
Description: IC OPAMP GP 400KHZ RRO 8SOIC |
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ALD210800APCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Rds On (Max) @ Id, Vgs: 25Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 10µA Supplier Device Package: 16-PDIP Part Status: Active |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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ALD210800ASCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Rds On (Max) @ Id, Vgs: 25Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 10µA Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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ALD210800PCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Rds On (Max) @ Id, Vgs: 25Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP Part Status: Active |
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ALD210800SCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Rds On (Max) @ Id, Vgs: 25Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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ALD210802PCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP |
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ALD210802SCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC |
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ALD210804PCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP |
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ALD210804SCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC |
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ALD210808APCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP |
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ALD210808ASCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC |
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ALD210808PCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP |
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ALD210808SCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC |
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ALD210814PCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP |
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ALD210814SCL | Advanced Linear Devices Inc. |
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-SOIC |
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ALD212900APAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-PDIP |
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ALD212900ASAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 10mV @ 20µA Supplier Device Package: 8-SOIC |
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ALD212900PAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 20µA Supplier Device Package: 8-PDIP Part Status: Active |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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ALD212900SAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 20µA Supplier Device Package: 8-SOIC |
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ALD212902PAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-PDIP |
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ALD212902SAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-SOIC |
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ALD212904PAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-PDIP |
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ALD212904SAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-SOIC |
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ALD212908APAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP |
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ALD212908ASAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC |
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ALD212908PAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-PDIP |
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ALD212908SAL | Advanced Linear Devices Inc. |
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-SOIC |
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| ALD1721EPAL |
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Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1MHZ RRO 8DIP
Description: IC OPAMP GP 1MHZ RRO 8DIP
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| ALD1721ESAL |
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Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1MHZ RRO 8SOIC
Description: IC OPAMP GP 1MHZ RRO 8SOIC
товар відсутній
| ALD1721GPAL |
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Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Rail-to-Rail
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 110µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-PDIP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Rail-to-Rail
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 110µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-PDIP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 10 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 563.75 грн |
| ALD1721GSAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 110µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 110µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 10 V
товар відсутній
| ALD1721PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1MHZ RRO 8DIP
Description: IC OPAMP GP 1MHZ RRO 8DIP
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| ALD1721SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1MHZ RRO 8SOIC
Description: IC OPAMP GP 1MHZ RRO 8SOIC
товар відсутній
| ALD1722EPA |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
товар відсутній
| ALD1722ESAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC
товар відсутній
| ALD1722GPAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| ALD1722GSAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC
Description: IC OPAMP GP 1.7MHZ RRO 8SOIC
на замовлення 76 шт:
термін постачання 21-31 дні (днів)| ALD1722PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
Description: IC OPAMP GP 1.7MHZ RRO 8DIP
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| ALD1722SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 800µA
Slew Rate: 2.8V/µs
Gain Bandwidth Product: 1.7 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 25 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 800µA
Slew Rate: 2.8V/µs
Gain Bandwidth Product: 1.7 MHz
Current - Input Bias: 0.01 pA
Voltage - Input Offset: 25 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 10 V
товар відсутній
| ALD1726EPAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8DIP
Description: IC OPAMP GP 400KHZ RRO 8DIP
товар відсутній
| ALD1726ESAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8SOIC
Description: IC OPAMP GP 400KHZ RRO 8SOIC
товар відсутній
| ALD1726GPAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8DIP
Description: IC OPAMP GP 400KHZ RRO 8DIP
на замовлення 39 шт:
термін постачання 21-31 дні (днів)| ALD1726GSAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
товар відсутній
| ALD1726PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8DIP
Description: IC OPAMP GP 400KHZ RRO 8DIP
товар відсутній
| ALD1726SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8SOIC
Description: IC OPAMP GP 400KHZ RRO 8SOIC
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| ALD1731APAL |
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Description: IC OPAMP GP 1 CIRCUIT 8DIP
товар відсутній
| ALD1731ASAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
товар відсутній
| ALD1731PAL |
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Description: IC OPAMP GP 1 CIRCUIT 8DIP
товар відсутній
| ALD1731SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
товар відсутній
| ALD1732APAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.5MHZ RRO 8DIP
Description: IC OPAMP GP 1.5MHZ RRO 8DIP
товар відсутній
| ALD1732ASAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 10 V
товар відсутній
| ALD1732PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.5MHZ RRO 8DIP
Description: IC OPAMP GP 1.5MHZ RRO 8DIP
товар відсутній
| ALD1732SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 1.5MHZ RRO 8SOIC
Description: IC OPAMP GP 1.5MHZ RRO 8SOIC
товар відсутній
| ALD1736APAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8DIP
Description: IC OPAMP GP 400KHZ RRO 8DIP
товар відсутній
| ALD1736ASAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8SOIC
Description: IC OPAMP GP 400KHZ RRO 8SOIC
товар відсутній
| ALD1736PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8DIP
Description: IC OPAMP GP 400KHZ RRO 8DIP
товар відсутній
| ALD1736SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: IC OPAMP GP 400KHZ RRO 8SOIC
Description: IC OPAMP GP 400KHZ RRO 8SOIC
товар відсутній
| ALD210800APCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 10µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 10µA
Supplier Device Package: 16-PDIP
Part Status: Active
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.7 грн |
| ALD210800ASCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 10µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 10µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 570.86 грн |
| ALD210800PCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
| ALD210800SCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Rds On (Max) @ Id, Vgs: 25Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.59 грн |
| ALD210802PCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
товар відсутній
| ALD210802SCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
товар відсутній
| ALD210804PCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
товар відсутній
| ALD210804SCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
товар відсутній
| ALD210808APCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
товар відсутній
| ALD210808ASCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
товар відсутній
| ALD210808PCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
товар відсутній
| ALD210808SCL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
товар відсутній
| ALD210814PCL |
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Description: MOSFET 4N-CH 10.6V 0.08A 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
товар відсутній
| ALD210814SCL |
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
Description: MOSFET 4N-CH 10.6V 0.08A 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-SOIC
товар відсутній
| ALD212900APAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-PDIP
товар відсутній
| ALD212900ASAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 10mV @ 20µA
Supplier Device Package: 8-SOIC
товар відсутній
| ALD212900PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 46 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 432.94 грн |
| ALD212900SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-SOIC
товар відсутній
| ALD212902PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
товар відсутній
| ALD212902SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
товар відсутній
| ALD212904PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
товар відсутній
| ALD212904SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
товар відсутній
| ALD212908APAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
товар відсутній
| ALD212908ASAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
товар відсутній
| ALD212908PAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
товар відсутній
| ALD212908SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
товар відсутній