Результат пошуку "18N20" : > 120
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FQU18N20V2 |
на замовлення 1700 шт: термін постачання 14-28 дні (днів) |
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| MTV018N-20 |
на замовлення 94 шт: термін постачання 14-28 дні (днів) |
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| PFB18N20 |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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| PHP18N20 |
на замовлення 1825 шт: термін постачання 14-28 дні (днів) |
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| PHP18N20E |
на замовлення 26000 шт: термін постачання 14-28 дні (днів) |
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| STB18N20 | ST | 07+ TO-263/D2-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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| STB18N20 | ST | TO-263/D2-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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AP18N20 Код товару: 165848 |
Транзистори > Польові N-канальні |
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| 18N-20 | Spectrum Control | RF Connectors / Coaxial Connectors ATTENUATOR 18N 18GHZ 20DB |
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18N20 | Goford Semiconductor |
 Description: N 200V, RD(MAX)<0.16@10V,VTH1.0VPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V |
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| 380AS018N2008DA3 | Glenair |
Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED |
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| 380AS018N2012DA3 | Glenair | Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED |
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501R18N201KV4E | Johanson Dielectrics |
Cap Ceramic 200pF 500V C0G 10% Pad SMD 1206 125C T/R |
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CNX718N20012T | VCC |
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 12V TAB |
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CNX718N20028W | VCC |
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 28V WIRE |
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| ECS0852L18N20AN COMPLIANT T | Glenair | Glenair |
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| EXB-18N200JX | Panasonic Electronic Components |
Description: RES ARRAY 4 RES 20 OHM 0502 HF Packaging: Tape & Reel (TR) |
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EXB-18N200JX | Panasonic |
Resistor Networks & Arrays 0201x4R resistor array Halogen free |
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| EXB-18N201JX | Panasonic Electronic Components |
Description: RES ARRAY 4 RES 200 OHM 0502 HF Packaging: Tape & Reel (TR) |
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EXB-18N201JX | Panasonic |
Resistor Networks & Arrays 0201x4R resistor array Halogen free |
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| EXB-18N202JX | Panasonic Electronic Components |
Description: RES ARRAY 4 RES 2K OHM 0502 HF Packaging: Tape & Reel (TR) |
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EXB-18N202JX | Panasonic |
Resistor Networks & Arrays 0201x4R resistor array Halogen free |
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| EXB-18N203JX | Panasonic Electronic Components |
Description: RES ARRAY 4 RES 20K OHM 0502 HF Packaging: Tape & Reel (TR) |
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EXB-18N203JX | Panasonic |
Resistor Networks & Arrays 0201x4R resistor array Halogen free |
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| EXB-18N204JX | Panasonic Electronic Components |
Description: RES ARRAY 4 RES 200K OHM 0502 HF Packaging: Tape & Reel (TR) |
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EXB-18N204JX | Panasonic |
Resistor Networks & Arrays 0201x4R resistor array Halogen free |
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FDD18N20LZ | ON Semiconductor |
Trans MOSFET N-CH 200V 16A 3-Pin(2+Tab) DPAK T/R |
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FDP18N20F | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Tube |
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FDP18N20F | onsemi |
Description: MOSFET N-CH 200V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
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FDPF18N20FT | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube |
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| FDPF18N20FT-G | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube |
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FQD18N20V2TF | ON Semiconductor |
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
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FQD18N20V2TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 9.75A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 26nC Technology: QFET® |
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FQD18N20V2TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 9.75A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 26nC Technology: QFET® кількість в упаковці: 1 шт |
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FQD18N20V2TM | ON Semiconductor |
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
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FQD18N20V2TM | onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
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FQD18N20V2TM | onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
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FQP18N20V2 | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Rail |
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FQPF18N20V2 | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F Rail |
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FQPF18N20V2YDTU | ON Semiconductor |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F T/R |
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HH18N200J500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 20 pF, +/- 5% 50 V T&R HH |
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| HH18N200J500CT | Walsin Technology Corporation |
Description: CAP CER 20PF 50V C0G/NP0 0603 Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Q, Low Loss, Ultra Low ESR Voltage - Rated: 50V Package / Case: 0603 (1608 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Capacitance: 20 pF |
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HH18N201G500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 200 pF, +/- 2% 50 V T&R HH |
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| HH18N201G500CT | Walsin Technology Corporation |
Description: CAP CER 200PF 50V C0G/NP0 0603 Tolerance: ±2% Features: High Q, Low Loss, Ultra Low ESR Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: 0603 (1608 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Capacitance: 200 pF |
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MCP18N20A-BP | Micro Commercial Co |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V Power Dissipation (Max): 179W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (H) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 25 V |
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| MCP18N20A-BP | Micro Commercial Components (MCC) |
MOSFET |
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| MCPF18N20-BP | Micro Commercial Components |
N-CHANNEL MOSFET |
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MCPF18N20A-BP | Micro Commercial Components (MCC) |
MOSFET N-Ch 200Vds 20Vgs FET |
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MCU18N20-TP | Micro Commercial Components |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) DPAK T/R |
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| MCU18N20A | Micro Commercial Components |
MCU18N20A |
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| MCU18N20A-TP | Micro Commercial Components |
MCU18N20A-TP |
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MCU18N20A-TP | Micro Commercial Co |
Description: MOSFET N-CH ENH FET 200VDS 30VGS Packaging: Bulk |
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MCU18N20A-TP | Micro Commercial Components (MCC) |
MOSFET |
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MT18N200J101CT | WALSIN |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603 Operating temperature: -55...125°C Mounting: SMD Tolerance: ±5% Case - mm: 1608 Case - inch: 0603 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 20pF Operating voltage: 100V Kind of capacitor: MLCC |
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MT18N200J101CT | WALSIN |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603 Operating temperature: -55...125°C Mounting: SMD Tolerance: ±5% Case - mm: 1608 Case - inch: 0603 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 20pF Operating voltage: 100V Kind of capacitor: MLCC кількість в упаковці: 4000 шт |
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| MT18N200J500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT Chip Capacitor, Auto AEC-Q200 , 0603 (1608), NP0, 20pF, +-5%, 50V |
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PJD18N20-L2-00001 | Panjit |
MOSFET TO-252AA/MOS/TO/NFET-200SMN |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 24nC |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 24nC кількість в упаковці: 1 шт |
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PJF18N20-T0-00001 | Panjit |
MOSFET |
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| 18N-20 |
Виробник: Spectrum Control
RF Connectors / Coaxial Connectors ATTENUATOR 18N 18GHZ 20DB
RF Connectors / Coaxial Connectors ATTENUATOR 18N 18GHZ 20DB
товар відсутній
| 18N20 |
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Виробник: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
товар відсутній
| 380AS018N2008DA3 |
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Виробник: Glenair
Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED
Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED
товар відсутній
| 380AS018N2012DA3 |
Виробник: Glenair
Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED
Circular MIL Spec Backshells NON ENV STRN RLF RC LOW STRT 2RING MED
товар відсутній
| 501R18N201KV4E |
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Виробник: Johanson Dielectrics
Cap Ceramic 200pF 500V C0G 10% Pad SMD 1206 125C T/R
Cap Ceramic 200pF 500V C0G 10% Pad SMD 1206 125C T/R
товар відсутній
| CNX718N20012T |
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Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 12V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 12V TAB
товар відсутній
| CNX718N20028W |
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Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 28V WIRE
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 28V WIRE
товар відсутній
| EXB-18N200JX |
Виробник: Panasonic Electronic Components
Description: RES ARRAY 4 RES 20 OHM 0502 HF
Packaging: Tape & Reel (TR)
Description: RES ARRAY 4 RES 20 OHM 0502 HF
Packaging: Tape & Reel (TR)
товар відсутній
| EXB-18N200JX |
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Виробник: Panasonic
Resistor Networks & Arrays 0201x4R resistor array Halogen free
Resistor Networks & Arrays 0201x4R resistor array Halogen free
товар відсутній
| EXB-18N201JX |
Виробник: Panasonic Electronic Components
Description: RES ARRAY 4 RES 200 OHM 0502 HF
Packaging: Tape & Reel (TR)
Description: RES ARRAY 4 RES 200 OHM 0502 HF
Packaging: Tape & Reel (TR)
товар відсутній
| EXB-18N201JX |
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Виробник: Panasonic
Resistor Networks & Arrays 0201x4R resistor array Halogen free
Resistor Networks & Arrays 0201x4R resistor array Halogen free
товар відсутній
| EXB-18N202JX |
Виробник: Panasonic Electronic Components
Description: RES ARRAY 4 RES 2K OHM 0502 HF
Packaging: Tape & Reel (TR)
Description: RES ARRAY 4 RES 2K OHM 0502 HF
Packaging: Tape & Reel (TR)
товар відсутній
| EXB-18N202JX |
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Виробник: Panasonic
Resistor Networks & Arrays 0201x4R resistor array Halogen free
Resistor Networks & Arrays 0201x4R resistor array Halogen free
товар відсутній
| EXB-18N203JX |
Виробник: Panasonic Electronic Components
Description: RES ARRAY 4 RES 20K OHM 0502 HF
Packaging: Tape & Reel (TR)
Description: RES ARRAY 4 RES 20K OHM 0502 HF
Packaging: Tape & Reel (TR)
товар відсутній
| EXB-18N203JX |
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Виробник: Panasonic
Resistor Networks & Arrays 0201x4R resistor array Halogen free
Resistor Networks & Arrays 0201x4R resistor array Halogen free
товар відсутній
| EXB-18N204JX |
Виробник: Panasonic Electronic Components
Description: RES ARRAY 4 RES 200K OHM 0502 HF
Packaging: Tape & Reel (TR)
Description: RES ARRAY 4 RES 200K OHM 0502 HF
Packaging: Tape & Reel (TR)
товар відсутній
| EXB-18N204JX |
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Виробник: Panasonic
Resistor Networks & Arrays 0201x4R resistor array Halogen free
Resistor Networks & Arrays 0201x4R resistor array Halogen free
товар відсутній
| FDD18N20LZ |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 16A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 16A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDP18N20F |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FDP18N20F |
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Виробник: onsemi
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
товар відсутній
| FDPF18N20FT |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FDPF18N20FT-G |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FQD18N20V2TF |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQD18N20V2TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
товар відсутній
| FQD18N20V2TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
кількість в упаковці: 1 шт
товар відсутній
| FQD18N20V2TM |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQD18N20V2TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
| FQD18N20V2TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
| FQP18N20V2 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Rail
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Rail
товар відсутній
| FQPF18N20V2 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F Rail
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F Rail
товар відсутній
| FQPF18N20V2YDTU |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F T/R
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220F T/R
товар відсутній
| HH18N200J500CT |
|
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 20 pF, +/- 5% 50 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 20 pF, +/- 5% 50 V T&R HH
товар відсутній
| HH18N200J500CT |
|
Виробник: Walsin Technology Corporation
Description: CAP CER 20PF 50V C0G/NP0 0603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Capacitance: 20 pF
Description: CAP CER 20PF 50V C0G/NP0 0603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Capacitance: 20 pF
товар відсутній
| HH18N201G500CT |
|
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 200 pF, +/- 2% 50 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 200 pF, +/- 2% 50 V T&R HH
товар відсутній
| HH18N201G500CT |
|
Виробник: Walsin Technology Corporation
Description: CAP CER 200PF 50V C0G/NP0 0603
Tolerance: ±2%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Capacitance: 200 pF
Description: CAP CER 200PF 50V C0G/NP0 0603
Tolerance: ±2%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Capacitance: 200 pF
товар відсутній
| MCP18N20A-BP |
|
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 25 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 25 V
товар відсутній
| MCPF18N20A-BP |
|
Виробник: Micro Commercial Components (MCC)
MOSFET N-Ch 200Vds 20Vgs FET
MOSFET N-Ch 200Vds 20Vgs FET
товар відсутній
| MCU18N20-TP |
|
Виробник: Micro Commercial Components
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| MT18N200J101CT |
Виробник: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±5%
Case - mm: 1608
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 20pF
Operating voltage: 100V
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±5%
Case - mm: 1608
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 20pF
Operating voltage: 100V
Kind of capacitor: MLCC
товар відсутній
| MT18N200J101CT |
Виробник: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±5%
Case - mm: 1608
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 20pF
Operating voltage: 100V
Kind of capacitor: MLCC
кількість в упаковці: 4000 шт
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 20pF; 100V; C0G (NP0); ±5%; SMD; 0603
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±5%
Case - mm: 1608
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 20pF
Operating voltage: 100V
Kind of capacitor: MLCC
кількість в упаковці: 4000 шт
товар відсутній
| MT18N200J500CT |
|
Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT Chip Capacitor, Auto AEC-Q200 , 0603 (1608), NP0, 20pF, +-5%, 50V
Multilayer Ceramic Capacitors MLCC - SMD/SMT Chip Capacitor, Auto AEC-Q200 , 0603 (1608), NP0, 20pF, +-5%, 50V
товар відсутній
| PJD18N20_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
товар відсутній
| PJD18N20_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
кількість в упаковці: 1 шт
товар відсутній