Результат пошуку "30N450HV" : 8
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYH30N450HV | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1545ns Features of semiconductor devices: high voltage |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1545ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 7-14 дні (днів) |
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| IXYH30N450HV | Littelfuse |
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
товар відсутній |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1542ns Features of semiconductor devices: high voltage |
товар відсутній |
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IXYT30N450HV | Littelfuse |
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
товар відсутній |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1542ns Features of semiconductor devices: high voltage кількість в упаковці: 300 шт |
товар відсутній |
| IXYH30N450HV |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2247.59 грн |
| IXYH30N450HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2697.11 грн |
| IXYH30N450HV |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
| IXYT30N450HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
товар відсутній
| IXYT30N450HV |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
| IXYT30N450HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
товар відсутній