Результат пошуку "D5nk5" : 27
Вид перегляду :
Мінімальне замовлення: 4
Мінімальне замовлення: 3
Мінімальне замовлення: 2500
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STD5NK50ZT4 | STMicroelectronics | MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH |
на замовлення 792 шт: термін постачання 21-30 дні (днів) |
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STD5NK50ZT4 | STMicroelectronics |
Description: MOSFET N-CH 500V 4.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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STD5NK50ZT4 | STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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STD5NK50 |
на замовлення 50000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z | ST | 07+ TO-252/D-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z | ST | TO-252/D-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z | STM | SOT-252 |
на замовлення 60000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z-1 | ST | TO-252/D-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z-1 | STM | SOT-252 |
на замовлення 60000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z-1 | ST | 08+ SOP16 |
на замовлення 500 шт: термін постачання 14-28 дні (днів) |
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STD5NK50Z-T4 |
на замовлення 6030 шт: термін постачання 14-28 дні (днів) |
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STD5NK50ZT4 | STD5NK50ZT4 Транзисторы MOS FET Power |
на замовлення 110 шт: термін постачання 2-3 дні (днів) |
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STD5NK50ZT4 | STD5NK50ZT4 Транзисторы MOS FET Power |
на замовлення 1017 шт: термін постачання 2-3 дні (днів) |
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STD5NK52ZD-1 |
на замовлення 15000 шт: термін постачання 14-28 дні (днів) |
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STD5NK50ZT4 Код товару: 84994 |
Мікросхеми > Інші мікросхеми 8542 39 90 00 |
товар відсутній
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STD5NK50Z-1 | STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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STD5NK50Z-1 | STMicroelectronics |
Description: MOSFET N-CH 500V 4.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V |
товар відсутній |
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STD5NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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STD5NK50ZT4 | STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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STD5NK50ZT4 | STMicroelectronics |
Description: MOSFET N-CH 500V 4.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V |
товар відсутній |
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STD5NK52ZD | STMicroelectronics |
Description: MOSFET N-CH 520V 4.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 520 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
товар відсутній |
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STD5NK52ZD | STMicroelectronics | Trans MOSFET N-CH 520V 4.4A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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STD5NK52ZD | STMicroelectronics |
Description: MOSFET N-CH 520V 4.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 520 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
товар відсутній |
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STD5NK52ZD-1 | STMicroelectronics |
Description: MOSFET N-CH 520V 4.4A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 520 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
товар відсутній |
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STD5NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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STEVAL-IHM021V1 | STMicroelectronics |
Description: BOARD EVAL L6390/STD5NK52ZD Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: L6390, STD5NK52ZD-1 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Obsolete |
товар відсутній |
STD5NK50ZT4 |
Виробник: STMicroelectronics
MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH
MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH
на замовлення 792 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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4+ | 97.71 грн |
10+ | 81.79 грн |
100+ | 57.7 грн |
250+ | 56.77 грн |
500+ | 49.92 грн |
1000+ | 43.14 грн |
2500+ | 42.14 грн |
STD5NK50ZT4 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Description: MOSFET N-CH 500V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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3+ | 99.94 грн |
10+ | 80.46 грн |
100+ | 63.99 грн |
500+ | 50.82 грн |
1000+ | 43.12 грн |
STD5NK50ZT4 |
Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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2500+ | 16.98 грн |
STD5NK50ZT4 |
STD5NK50ZT4 Транзисторы MOS FET Power
на замовлення 110 шт:
термін постачання 2-3 дні (днів)STD5NK50ZT4 |
STD5NK50ZT4 Транзисторы MOS FET Power
на замовлення 1017 шт:
термін постачання 2-3 дні (днів)STD5NK50Z-1 |
Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) IPAK Tube
товар відсутній
STD5NK50Z-1 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 4.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Description: MOSFET N-CH 500V 4.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
товар відсутній
STD5NK50ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
STD5NK50ZT4 |
Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 500V 4.4A 3-Pin(2+Tab) DPAK T/R
товар відсутній
STD5NK50ZT4 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Description: MOSFET N-CH 500V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
товар відсутній
STD5NK52ZD |
Виробник: STMicroelectronics
Description: MOSFET N-CH 520V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 520V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
товар відсутній
STD5NK52ZD |
Виробник: STMicroelectronics
Trans MOSFET N-CH 520V 4.4A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 520V 4.4A 3-Pin(2+Tab) DPAK T/R
товар відсутній
STD5NK52ZD |
Виробник: STMicroelectronics
Description: MOSFET N-CH 520V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 520V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
товар відсутній
STD5NK52ZD-1 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 520V 4.4A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 520V 4.4A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
товар відсутній
STD5NK50ZT4 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
STEVAL-IHM021V1 |
Виробник: STMicroelectronics
Description: BOARD EVAL L6390/STD5NK52ZD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: L6390, STD5NK52ZD-1
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Description: BOARD EVAL L6390/STD5NK52ZD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: L6390, STD5NK52ZD-1
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
товар відсутній