Результат пошуку "IXTF02N450" : 9
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTF02N450 | LITTELFUSE |
Description: LITTELFUSE - IXTF02N450 - Leistungs-MOSFET, n-Kanal, 4.5 kV, 200 mA, 750 ohm, ISOPLUS i4-PAK, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 4.5kV rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 78W Bauform - Transistor: ISOPLUS i4-PAK Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: - Betriebstemperatur, max.: - Drain-Source-Durchgangswiderstand: 750ohm SVHC: Boric acid (14-Jun-2023) |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
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IXTF02N450 | IXYS |
Description: MOSFET N-CH 4500V 200MA I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
на замовлення 1028 шт: термін постачання 21-31 дні (днів) |
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IXTF02N450 | IXYS | MOSFET 4500V 200mA HV Power MOSFET |
на замовлення 309 шт: термін постачання 21-30 дні (днів) |
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IXTF02N450 Код товару: 147768 |
Транзистори > Польові N-канальні |
товар відсутній
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IXTF02N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 0.2A Power dissipation: 78W Case: ISOPLUS i4-pac™ x024c On-state resistance: 625Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs |
товар відсутній |
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IXTF02N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 0.2A Power dissipation: 78W Case: ISOPLUS i4-pac™ x024c On-state resistance: 625Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTF02N450 | Littelfuse | Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK |
товар відсутній |
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IXTF02N450 | Littelfuse | Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK |
товар відсутній |
IXTF02N450 |
Виробник: LITTELFUSE
Description: LITTELFUSE - IXTF02N450 - Leistungs-MOSFET, n-Kanal, 4.5 kV, 200 mA, 750 ohm, ISOPLUS i4-PAK, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 4.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: ISOPLUS i4-PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: -
Betriebstemperatur, max.: -
Drain-Source-Durchgangswiderstand: 750ohm
SVHC: Boric acid (14-Jun-2023)
Description: LITTELFUSE - IXTF02N450 - Leistungs-MOSFET, n-Kanal, 4.5 kV, 200 mA, 750 ohm, ISOPLUS i4-PAK, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 4.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: ISOPLUS i4-PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: -
Betriebstemperatur, max.: -
Drain-Source-Durchgangswiderstand: 750ohm
SVHC: Boric acid (14-Jun-2023)
на замовлення 253 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2879.64 грн |
5+ | 2646.67 грн |
10+ | 2412.97 грн |
50+ | 2165.99 грн |
100+ | 1930.5 грн |
IXTF02N450 |
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2862.81 грн |
25+ | 2309.97 грн |
100+ | 2155.97 грн |
IXTF02N450 |
Виробник: IXYS
MOSFET 4500V 200mA HV Power MOSFET
MOSFET 4500V 200mA HV Power MOSFET
на замовлення 309 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3109.06 грн |
10+ | 2730.6 грн |
25+ | 2233.14 грн |
50+ | 2158.87 грн |
100+ | 2083.95 грн |
250+ | 2009.69 грн |
500+ | 1961.72 грн |
IXTF02N450 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
IXTF02N450 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTF02N450 |
Виробник: Littelfuse
Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK
Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK
товар відсутній
IXTF02N450 |
Виробник: Littelfuse
Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK
Trans MOSFET N-CH Si 4.5KV 0.2A 3-Pin(3+Tab) ISOPLUS I4-PAK
товар відсутній