Виробник: Mastech
Інструмент та обладнання > Прилади вимірювальні (Мультиметри, Тестери)
Група: Мультиметри
Опис: Мультиметр професійний настільний. Напруга: 200 мВ-1000 В, струм: 220 мкА-10 А, опір: 220 Ом-200 МОм, ємність: 20 нФ-20 мФ, частота: 20 Гц-220 МГц, температура: -30 ° ~ 1300 ° C. Інтерфейс RS232 і програмне забезпечення під Windows. Відповідає вимогам стандарту IEC61010-1 CAT II 1000V / CAT III 600V. Габарити: 238x230x83мм
Вимірювання частоти: 20 Hz...220 MHz / 5 Hz...100 kHz
Вимірювання напруги та струму: 200 mV...1000 V/ 200 µA...10 A
Вимірювання опору: 200 Ohm...200 MOhm
Вимірювання індуктивності: нема
Вимірювання ємності: 20 nF...20 mF
Вимірювання температури: -30...+1300°C

Виробник: WITHWAVE CO LTD
Description: Flexible Microwave Absorber Shee
Packaging: Sheet
Material: Polymer Resin, Magnetic Powder
Length: 11.811" (300.00mm)
Shape: Sheet
Type: Absorbing Sheet
Width: 8.268" (210.00mm)
Operating Temperature: -30°C ~ 90°C
Adhesive: Self-Adhesive
Thickness - Overall: 0.039" (1.00mm)

Виробник: Amphenol Positronic
D-Sub Contacts CON M size 22 solder cup

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X25.2MM 12VDC WIRE
Features: Auto Restart
Packaging: Bulk
Voltage - Rated: 12VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 5000 RPM
Air Flow: 70.5 CFM (1.97m³/min)
Width: 25.20mm
Weight: 0.172 lb (78.02 g)
Termination: 2 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 50.0dB(A)
Static Pressure: 0.550 in H2O (137.0 Pa)
Part Status: Active

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X25.2MM 24VDC WIRE
Features: Auto Restart
Packaging: Bulk
Voltage - Rated: 24VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 5000 RPM
Air Flow: 70.5 CFM (1.97m³/min)
Width: 25.20mm
Weight: 0.172 lb (78.02 g)
Termination: 2 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 50.0dB(A)
Static Pressure: 0.550 in H2O (137.0 Pa)
Part Status: Active

Виробник: Mechatronics Fan Group
MS8025L12B-FHR-2EM

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 12VDC WIRE
Packaging: Bulk
Features: Auto Restart
Voltage - Rated: 12VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 9000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Termination: 2 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 62.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)
Part Status: Active

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 12VDC WIRE
Packaging: Bulk
Features: Auto Restart, PWM Control, Speed Sensor (Tach)
Voltage - Rated: 12VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 9000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Termination: 4 Wire Leads
Fan Type: Tubeaxial
Noise: 62.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)
Part Status: Active

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 24VDC WIRE
Features: Auto Restart
Packaging: Bulk
Voltage - Rated: 24VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 10000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Termination: 2 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 77.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 24VDC WIRE
Features: Auto Restart, PWM Control, Speed Sensor (Tach)
Packaging: Bulk
Voltage - Rated: 24VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 10000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Termination: 4 Wire Leads
Fan Type: Tubeaxial
Noise: 77.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)
Part Status: Active

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 24VDC WIRE
Features: Auto Restart, PWM Control, Speed Sensor (Tach)
Packaging: Bulk
Voltage - Rated: 24VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 10000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Operating Temperature: 14 ~ 158°F (-10 ~ 70°C)
Termination: 4 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 77.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 48VDC WIRE
Packaging: Bulk
Features: Auto Restart
Voltage - Rated: 48VDC
Size / Dimension: Square - 80mm L x 80mm H
Bearing Type: Ball
RPM: 10000 RPM
Air Flow: 120.5 CFM (3.37m³/min)
Width: 38.00mm
Weight: 0.391 lb (177.35 g)
Termination: 2 Wire Leads
Ingress Protection: IP68 - Dust Tight, Waterproof
Fan Type: Tubeaxial
Noise: 77.0dB(A)
Static Pressure: 1.550 in H2O (385.0 Pa)

Виробник: Mechatronics Fan Group
Description: FAN AXIAL 80X38MM 48VDC
Packaging: Bulk

Виробник: ST
09+ SOP28

Виробник: TOS
MODULE

Виробник: ELECTRIC
TO-

Виробник: Focus LCDs
Description: 2.4" TFT IPS SUNLIGHT READABLE
Packaging: Tape & Box (TB)
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: LED - White
Interface: MIPI DSI
Viewing Area: 37.72mm W x 49.86mm H
Dot Pixels: 480 x 640
Controller Type: ST7701SI
Diagonal Screen Size: 2.4" (62.52mm)
Graphics Color: Red, Green, Blue (RGB)
Touchscreen: Non-Touch
Part Status: Active

Виробник: onsemi
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V

Виробник: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench MOSFET

Виробник: onsemi
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V

Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V

Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V

Виробник: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V

Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active

Виробник: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench SyncFET

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V

Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V

Виробник: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V

Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V

Виробник: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V

Виробник: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench SyncFET

Виробник: onsemi / Fairchild
MOSFET N-Channel PowerTrench MOSFET

Виробник: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V

Виробник: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56

Виробник: onsemi / Fairchild
MOSFET 100V Sym Dual NCh MOSFET PowerTrench

Виробник: onsemi
Description: MOSFET N/P-CH 150V 6.2A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 75V, 230pF @ 75V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56

Виробник: NXP USA Inc.
Description: RFID TAG R/W 100-150KHZ ENCAP
Packaging: Tape & Reel (TR)
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Style: Encapsulated
Frequency: 100kHz ~ 150kHz
Memory Type: Read/Write
Technology: Passive
Standards: ISO 11784, ISO 11785
Writable Memory: 1.76kb (User)

Виробник: NXP USA Inc.
Description: RFID TAG R/W 100-150KHZ ENCAP
Packaging: Cut Tape (CT)
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Style: Encapsulated
Frequency: 100kHz ~ 150kHz
Memory Type: Read/Write
Technology: Passive
Standards: ISO 11784, ISO 11785
Writable Memory: 1.76kb (User)

Виробник: NXP Semiconductors
NFC/RFID Tags & Transponders RFID HTAG ADVANCED

Виробник: Samtec Inc.
Description: CONN HDR 3POS 0.1 STACK SMD GOLD
Packaging: Bulk
Color: Black
Mounting Type: Surface Mount
Pitch: 0.100" (2.54mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 10.0µin (0.25µm)
Number of Rows: 1
Number of Positions: 3
Length - Overall Pin: 1.065" (27.051mm)
Length - Post (Mating): 0.265" (6.731mm)
Length - Stack Height: 0.800" (20.320mm)

Виробник: Analog Devices
Differential Amplifiers Precision, Low Power Differential Amplifier/ADC Driver Family

Виробник: Analog Devices Inc.
Description: IC OPAMP DIFF 1 CIRCUIT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Differential
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.9mA
Slew Rate: 75V/µs
Gain Bandwidth Product: 500 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 25 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 55 mA
-3db Bandwidth: 35 MHz
Voltage - Supply Span (Min): 2.8 V
Voltage - Supply Span (Max): 11 V

Виробник: Analog Devices
Differential Amplifiers Precision, Low Power Differential Amplifier/ADC Driver Family

Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW

Виробник: Micro Commercial Components (MCC)
Bipolar Transistors - BJT NPN PURPOSE AMPLIFIER

Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW

Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101

Виробник: Samtec Inc.
Description: CONN BRD STACK .100" 50POS
Packaging: Bulk
Color: Black
Mounting Type: Through Hole
Pitch: 0.100" (2.54mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 10.0µin (0.25µm)
Number of Rows: 1
Number of Positions: 50
Length - Overall Pin: 1.230" (31.242mm)
Length - Post (Mating): 0.250" (6.350mm)
Length - Stack Height: 0.800" (20.320mm)
Length - Tail: 0.180" (4.572mm)

Виробник: EAGLERISE ELECTRIC & ELECTRONIC CO. LTD
AC/DC, 80W, Вхід: 198-264VAC, Вихід: 1200...1600mA/36...52V, розміри 280x30x21 мм, -20...+50 С, PFC

Виробник: EAGLERISE ELECTRIC & ELECTRONIC CO. LTD
AC/DC, 80W, Вхід: 198-264VAC, Вихід: 200...350mA/140-230V, розміри 210x30x21 мм, -20...+50 С, PFC

Виробник: LGS
08+ PLCC

Виробник: LGS
1997

Виробник: LGS
08+ .

Виробник: LGS

Виробник: LGS
08+ .

Виробник: LGS
PLCC44