Результат пошуку "irf6216" : 14

Вид перегляду :
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IRF6216PBF International Rectifier/Infineon irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 P-канальний ПТ; Udss, В = 150; Id = 2,2 А; Ciss, пФ @ Uds, В = 1280 @ 25; Qg, нКл = 49 @ 10 В; Rds = 240 мОм @ 1,3 A, 10 В; Ugs(th) = 5 В @ 250 мкА; Р, Вт = 2,5 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
на замовлення 5 шт:
термін постачання 2-3 дні (днів)
5+124.8 грн
10+ 62.4 грн
100+ 27.83 грн
Мінімальне замовлення: 5
IRF6216TR IR 2002
на замовлення 3390 шт:
термін постачання 14-28 дні (днів)
IRF6216PBF IRF6216PBF
Код товару: 20309
IR irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 150 V
Id,A: 2,2 A
Rds(on),Om: 0,24 Ohm
Монтаж: SMD
товар відсутній
IRF6216 IR - ASA only Supplier irf6216.pdf Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC
товар відсутній
IRF6216PBF IRF6216PBF Infineon Technologies irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216PBF IRF6216PBF Infineon Technologies infineon-irf6216-datasheet-v01_01-en.pdf Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC Tube
товар відсутній
IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC T/R
товар відсутній
IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC T/R
товар відсутній
IRF6216TRPBF-1 IRF6216TRPBF-1 Infineon Technologies IRF6216PBF-1_7-30-14.pdf Description: MOSFET P-CH 150V 2.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRF6216PBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
Виробник: International Rectifier/Infineon
P-канальний ПТ; Udss, В = 150; Id = 2,2 А; Ciss, пФ @ Uds, В = 1280 @ 25; Qg, нКл = 49 @ 10 В; Rds = 240 мОм @ 1,3 A, 10 В; Ugs(th) = 5 В @ 250 мкА; Р, Вт = 2,5 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
на замовлення 5 шт:
термін постачання 2-3 дні (днів)
Кількість Ціна без ПДВ
5+124.8 грн
10+ 62.4 грн
100+ 27.83 грн
Мінімальне замовлення: 5
IRF6216TR
Виробник: IR
2002
на замовлення 3390 шт:
термін постачання 14-28 дні (днів)
IRF6216PBF
Код товару: 20309
irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216PBF
Виробник: IR
Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 150 V
Id,A: 2,2 A
Rds(on),Om: 0,24 Ohm
Монтаж: SMD
товар відсутній
IRF6216 irf6216.pdf
Виробник: IR - ASA only Supplier
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC
товар відсутній
IRF6216PBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216PBF infineon-irf6216-datasheet-v01_01-en.pdf
IRF6216PBF
Виробник: Infineon Technologies
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC Tube
товар відсутній
IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: Infineon Technologies
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC T/R
товар відсутній
IRF6216TRPBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: Infineon Technologies
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC T/R
товар відсутній
IRF6216TRPBF-1 IRF6216PBF-1_7-30-14.pdf
IRF6216TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній