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Мінімальне замовлення: 4
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Мінімальне замовлення: 11539
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Фото | Назва | Виробник | Інформація |
Доступність |
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1N4448 Код товару: 20338 |
YJ/Philips |
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні Корпус: DO-35 (DO-204AH, SOD27) Uзвор., V: 100 V Iвипр., A: 0,2 A Опис: Швидкий Може замінити: 1N4148 Монтаж: THT Падіння напруги Vf: 1 V |
у наявності: 8546 шт
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1N4448W Код товару: 160505 |
Yangjie |
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні Корпус: SOD-123 Uзвор., V: 100 V Iвипр., A: 0,25 A Монтаж: SMD Падіння напруги Vf: 1 V |
у наявності: 2850 шт
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1N4448 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: Ammo Pack |
на замовлення 17875 шт: термін постачання 21-30 дні (днів) |
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1N4448 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W |
на замовлення 5622 шт: термін постачання 21-30 дні (днів) |
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1N4448 | DC COMPONENTS |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: Ammo Pack |
на замовлення 5110 шт: термін постачання 21-30 дні (днів) |
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1N4448 | CDIL |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: Ammo Pack |
на замовлення 13002 шт: термін постачання 21-30 дні (днів) |
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1N4448 | LGE | Імпульсний діод вивідний; Ur, В = 100; Iо, A = 0,15; If, A = 0,15; Uf, В = 1; Тексп, °С = -65...+175; DO-35 |
на замовлення 2384 шт: термін постачання 2-3 дні (днів) |
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1N4448 | Philips | Диод ММ DO35 U=75V I=0,2A |
на замовлення 150 шт: термін постачання 2-3 дні (днів) |
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1N4448 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W кількість в упаковці: 1 шт |
на замовлення 5622 шт: термін постачання 7-14 дні (днів) |
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1N4448 | CDIL |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 13002 шт: термін постачання 7-14 дні (днів) |
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1N4448 | DC COMPONENTS |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 5110 шт: термін постачання 7-14 дні (днів) |
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1N4448 | Diotec Semiconductor |
Description: DIODE GEN PURP 75V 200MA DO35 Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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1N4448 | Diotec Semiconductor | Rectifier Diode Small Signal Switching 100V 0.2A 4ns 2-Pin DO-35 Ammo |
на замовлення 6596 шт: термін постачання 21-31 дні (днів) |
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1N4448 | Fairchild Semiconductor |
Description: HIGH CONDUCTANCE FAST DIODE Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 115764 шт: термін постачання 21-31 дні (днів) |
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1N4448 | onsemi |
Description: SMALL SGNL DIODE DO35 100V 175C Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 98087 шт: термін постачання 21-31 дні (днів) |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: Ammo Pack |
на замовлення 825 шт: термін постачання 21-30 дні (днів) |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 825 шт: термін постачання 7-14 дні (днів) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 90 шт: термін постачання 7-14 дні (днів) |
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1N4448 A0G | Taiwan Semiconductor | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1N4448; (0.15A 100V); 4ns; корпус: DO-35 (лента); DC Comp. |
на замовлення 219 шт: термін постачання 2-3 дні (днів) |
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1N4448HLP-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DFN2 Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 5180 шт: термін постачання 21-30 дні (днів) |
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1N4448HLP-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DFN2 Max. forward voltage: 1V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 5180 шт: термін постачання 7-14 дні (днів) |
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1N4448HLP-7 | Diodes Incorporated |
Description: DIODE GEN PURP 80V 125MA 2DFN Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 6494510 шт: термін постачання 21-31 дні (днів) |
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1N4448HLP-7 | Diodes Inc | Rectifier Diode Small Signal Switching 80V 0.3A 4ns 2-Pin X1-DFN T/R |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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1N4448HLP-7 | Diodes Incorporated |
Description: DIODE GEN PURP 80V 125MA 2DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 6492000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-13-F | Diodes Incorporated |
Description: DIODE GEN PURP 80V 250MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 756965 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-13-F | Diodes Incorporated |
Description: DIODE GEN PURP 80V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 750000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. forward impulse current: 1A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 3550 шт: термін постачання 21-30 дні (днів) |
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1N4448HWS-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. forward impulse current: 1A Power dissipation: 0.2W Kind of package: reel; tape кількість в упаковці: 25 шт |
на замовлення 3550 шт: термін постачання 7-14 дні (днів) |
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1N4448HWS-7-F | Diodes Incorporated |
Description: DIODE GEN PURP 80V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 419000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-7-F | Diodes Incorporated |
Description: DIODE GEN PURP 80V 250MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 419782 шт: термін постачання 21-31 дні (днів) |
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1N4448HWSQ-7-F | Diodes Incorporated |
Description: DIODE GP 80V 250MA SOD323 3K Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current - Reverse Leakage @ Vr: 100 nA @ 80 V Reverse Recovery Time (trr): 4 ns Voltage - DC Reverse (Vr) (Max): 80 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 399000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWSQ-7-F | Diodes Incorporated |
Description: DIODE GP 80V 250MA SOD323 3K Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 399000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWT-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Max. load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 3pF Case: SOD523 Max. forward voltage: 0.62V Max. forward impulse current: 1A Power dissipation: 0.15W Kind of package: reel; tape |
на замовлення 2650 шт: термін постачання 21-30 дні (днів) |
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1N4448HWT-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Max. load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 3pF Case: SOD523 Max. forward voltage: 0.62V Max. forward impulse current: 1A Power dissipation: 0.15W Kind of package: reel; tape кількість в упаковці: 25 шт |
на замовлення 2650 шт: термін постачання 7-14 дні (днів) |
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1N4448HWT-7 | Diodes Incorporated |
Description: DIODE GEN PURP 80V 125MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 2118000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWT-7 | Diodes Inc | Rectifier Diode Small Signal Switching 80V 0.25A 4ns 2-Pin SOD-523 T/R |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWT-7 | Diodes Incorporated |
Description: DIODE GEN PURP 80V 125MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 2120406 шт: термін постачання 21-31 дні (днів) |
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1N4448TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.44W Kind of package: Ammo Pack |
на замовлення 2331 шт: термін постачання 21-30 дні (днів) |
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1N4448TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.44W Kind of package: Ammo Pack кількість в упаковці: 1 шт |
на замовлення 2331 шт: термін постачання 7-14 дні (днів) |
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1N4448TAP | Vishay | Rectifier Diode Small Signal Switching 100V 0.3A 8ns 2-Pin DO-35 Ammo |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1N4448TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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1N4448TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 20077 шт: термін постачання 21-31 дні (днів) |
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1N4448TR | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.44W Kind of package: reel; tape |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W |
на замовлення 9990 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.44W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 30000 шт: термін постачання 7-14 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W кількість в упаковці: 1 шт |
на замовлення 9990 шт: термін постачання 7-14 дні (днів) |
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1N4448TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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1N4448TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 150MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 55698 шт: термін постачання 21-31 дні (днів) |
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1N4448TR | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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1N4448TR | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 277868 шт: термін постачання 21-31 дні (днів) |
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1N4448W | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 1A Leakage current: 50µA Power dissipation: 0.4W Kind of package: reel; tape |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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1N4448W | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 1A Leakage current: 50µA Power dissipation: 0.4W Kind of package: reel; tape кількість в упаковці: 25 шт |
на замовлення 500 шт: термін постачання 7-14 дні (днів) |
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1N4448W | Diotec Semiconductor |
Description: DIODE GEN PURP 75V 0.15A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
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1N4448W | EVVO |
Description: DIODE GEN PURP 100V 500MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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1N4448W | Diotec Semiconductor | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R |
на замовлення 1442 шт: термін постачання 21-31 дні (днів) |
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1N4448W | Diotec Semiconductor | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1N4448W RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 75V 150MA SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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1N4448W RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 75V 150MA SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 17000 шт: термін постачання 21-31 дні (днів) |
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1N4448 Код товару: 20338 |
Виробник: YJ/Philips
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні
Корпус: DO-35 (DO-204AH, SOD27)
Uзвор., V: 100 V
Iвипр., A: 0,2 A
Опис: Швидкий
Може замінити: 1N4148
Монтаж: THT
Падіння напруги Vf: 1 V
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні
Корпус: DO-35 (DO-204AH, SOD27)
Uзвор., V: 100 V
Iвипр., A: 0,2 A
Опис: Швидкий
Може замінити: 1N4148
Монтаж: THT
Падіння напруги Vf: 1 V
у наявності: 8546 шт
Кількість | Ціна без ПДВ |
---|---|
4+ | 1.5 грн |
10+ | 0.9 грн |
100+ | 0.7 грн |
1000+ | 0.45 грн |
1N4448W Код товару: 160505 |
Виробник: Yangjie
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні
Корпус: SOD-123
Uзвор., V: 100 V
Iвипр., A: 0,25 A
Монтаж: SMD
Падіння напруги Vf: 1 V
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні
Корпус: SOD-123
Uзвор., V: 100 V
Iвипр., A: 0,25 A
Монтаж: SMD
Падіння напруги Vf: 1 V
у наявності: 2850 шт
Кількість | Ціна без ПДВ |
---|---|
4+ | 1.5 грн |
10+ | 1.1 грн |
100+ | 0.9 грн |
1000+ | 0.7 грн |
1N4448 |
Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
на замовлення 17875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 2.15 грн |
300+ | 1.14 грн |
1000+ | 0.58 грн |
1925+ | 0.42 грн |
5250+ | 0.39 грн |
15000+ | 0.38 грн |
1N4448 |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 5622 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
56+ | 6.64 грн |
72+ | 4.79 грн |
88+ | 3.9 грн |
132+ | 2.6 грн |
211+ | 1.62 грн |
264+ | 1.3 грн |
500+ | 1.1 грн |
1000+ | 0.98 грн |
1051+ | 0.75 грн |
1N4448 |
Виробник: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
на замовлення 5110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
56+ | 6.64 грн |
85+ | 4.04 грн |
146+ | 2.35 грн |
204+ | 1.68 грн |
250+ | 1.41 грн |
1000+ | 1.18 грн |
1553+ | 0.51 грн |
4277+ | 0.48 грн |
1N4448 |
Виробник: CDIL
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
на замовлення 13002 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 6.23 грн |
105+ | 3.29 грн |
179+ | 1.92 грн |
249+ | 1.38 грн |
296+ | 1.16 грн |
1000+ | 0.97 грн |
1985+ | 0.4 грн |
5463+ | 0.38 грн |
1N4448 |
Виробник: LGE
Імпульсний діод вивідний; Ur, В = 100; Iо, A = 0,15; If, A = 0,15; Uf, В = 1; Тексп, °С = -65...+175; DO-35
Імпульсний діод вивідний; Ur, В = 100; Iо, A = 0,15; If, A = 0,15; Uf, В = 1; Тексп, °С = -65...+175; DO-35
на замовлення 2384 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
534+ | 1.17 грн |
589+ | 1.06 грн |
667+ | 0.94 грн |
1N4448 |
Виробник: Philips
Диод ММ DO35 U=75V I=0,2A
Диод ММ DO35 U=75V I=0,2A
на замовлення 150 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 1.54 грн |
1N4448 |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
кількість в упаковці: 1 шт
на замовлення 5622 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 7.96 грн |
43+ | 5.97 грн |
53+ | 4.68 грн |
79+ | 3.12 грн |
127+ | 1.95 грн |
250+ | 1.56 грн |
500+ | 1.31 грн |
1N4448 |
Виробник: CDIL
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 13002 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 7.48 грн |
63+ | 4.09 грн |
108+ | 2.3 грн |
150+ | 1.65 грн |
250+ | 1.39 грн |
1000+ | 1.16 грн |
1985+ | 0.48 грн |
1N4448 |
Виробник: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 5110 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 7.96 грн |
51+ | 5.03 грн |
88+ | 2.83 грн |
122+ | 2.02 грн |
250+ | 1.69 грн |
1000+ | 1.41 грн |
1553+ | 0.61 грн |
1N4448 |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1250+ | 9.6 грн |
2500+ | 5.1 грн |
5000+ | 2.79 грн |
10000+ | 1.73 грн |
20000+ | 1.29 грн |
1N4448 |
Виробник: Diotec Semiconductor
Rectifier Diode Small Signal Switching 100V 0.2A 4ns 2-Pin DO-35 Ammo
Rectifier Diode Small Signal Switching 100V 0.2A 4ns 2-Pin DO-35 Ammo
на замовлення 6596 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 0.38 грн |
1N4448 |
Виробник: Fairchild Semiconductor
Description: HIGH CONDUCTANCE FAST DIODE
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: HIGH CONDUCTANCE FAST DIODE
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 115764 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
1N4448 |
Виробник: onsemi
Description: SMALL SGNL DIODE DO35 100V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: SMALL SGNL DIODE DO35 100V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 98087 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.4 грн |
66+ | 4.18 грн |
122+ | 2.25 грн |
500+ | 1.66 грн |
1000+ | 1.15 грн |
2000+ | 0.95 грн |
5000+ | 0.89 грн |
10000+ | 0.75 грн |
50000+ | 0.6 грн |
1N4448 A0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
на замовлення 825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
42+ | 8.85 грн |
47+ | 7.3 грн |
53+ | 6.57 грн |
79+ | 4.38 грн |
100+ | 3.9 грн |
250+ | 2.18 грн |
500+ | 1.96 грн |
1N4448 A0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 825 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 10.62 грн |
29+ | 9.1 грн |
32+ | 7.89 грн |
47+ | 5.26 грн |
100+ | 4.68 грн |
250+ | 2.61 грн |
500+ | 2.36 грн |
1N4448 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
39+ | 9.58 грн |
43+ | 7.99 грн |
49+ | 7.12 грн |
74+ | 4.68 грн |
1N4448 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 90 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 11.5 грн |
26+ | 9.96 грн |
29+ | 8.54 грн |
44+ | 5.62 грн |
100+ | 5.04 грн |
250+ | 2.81 грн |
500+ | 2.54 грн |
1N4448 A0G |
Виробник: Taiwan Semiconductor
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 0.73 грн |
1N4448; (0.15A 100V); 4ns; корпус: DO-35 (лента); DC Comp. |
на замовлення 219 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
219+ | 2.77 грн |
1N4448HLP-7 |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 5180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 10.62 грн |
85+ | 4.24 грн |
100+ | 3.75 грн |
245+ | 3.26 грн |
670+ | 3.08 грн |
1N4448HLP-7 |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 5180 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.74 грн |
50+ | 5.29 грн |
100+ | 4.5 грн |
245+ | 3.91 грн |
670+ | 3.69 грн |
1N4448HLP-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 6494510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.17 грн |
16+ | 18.07 грн |
100+ | 10.86 грн |
500+ | 9.44 грн |
1000+ | 6.42 грн |
1N4448HLP-7 |
Виробник: Diodes Inc
Rectifier Diode Small Signal Switching 80V 0.3A 4ns 2-Pin X1-DFN T/R
Rectifier Diode Small Signal Switching 80V 0.3A 4ns 2-Pin X1-DFN T/R
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.89 грн |
1N4448HLP-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 6492000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.73 грн |
6000+ | 6.34 грн |
9000+ | 5.61 грн |
30000+ | 5.2 грн |
75000+ | 4.42 грн |
1N4448HWS-13-F |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 756965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.04 грн |
19+ | 15.13 грн |
100+ | 7.64 грн |
500+ | 5.85 грн |
1000+ | 4.34 грн |
2000+ | 3.65 грн |
5000+ | 3.43 грн |
1N4448HWS-13-F |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 750000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.34 грн |
30000+ | 3.16 грн |
50000+ | 2.61 грн |
1N4448HWS-7-F |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 3550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.51 грн |
175+ | 2.09 грн |
500+ | 1.6 грн |
1375+ | 1.51 грн |
1N4448HWS-7-F |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
кількість в упаковці: 25 шт
на замовлення 3550 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 2.6 грн |
500+ | 1.92 грн |
1375+ | 1.81 грн |
1N4448HWS-7-F |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 419000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.55 грн |
6000+ | 2.28 грн |
9000+ | 1.89 грн |
30000+ | 1.74 грн |
75000+ | 1.56 грн |
150000+ | 1.36 грн |
1N4448HWS-7-F |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 419782 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.93 грн |
28+ | 9.99 грн |
100+ | 4.89 грн |
500+ | 3.83 грн |
1000+ | 2.66 грн |
1N4448HWSQ-7-F |
Виробник: Diodes Incorporated
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 399000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 16.35 грн |
25+ | 11.02 грн |
100+ | 5.37 грн |
500+ | 4.2 грн |
1000+ | 2.92 грн |
1N4448HWSQ-7-F |
Виробник: Diodes Incorporated
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Grade: Automotive
Qualification: AEC-Q101
на замовлення 399000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.8 грн |
6000+ | 2.5 грн |
9000+ | 2.07 грн |
30000+ | 1.91 грн |
75000+ | 1.72 грн |
150000+ | 1.49 грн |
1N4448HWT-7 |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.54 грн |
200+ | 1.78 грн |
500+ | 1.57 грн |
600+ | 1.36 грн |
1600+ | 1.29 грн |
1N4448HWT-7 |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 25 шт
на замовлення 2650 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 3.04 грн |
125+ | 2.22 грн |
500+ | 1.89 грн |
600+ | 1.64 грн |
1600+ | 1.55 грн |
1N4448HWT-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 2118000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.24 грн |
6000+ | 2.89 грн |
9000+ | 2.4 грн |
30000+ | 2.21 грн |
75000+ | 1.99 грн |
150000+ | 1.72 грн |
1N4448HWT-7 |
Виробник: Diodes Inc
Rectifier Diode Small Signal Switching 80V 0.25A 4ns 2-Pin SOD-523 T/R
Rectifier Diode Small Signal Switching 80V 0.25A 4ns 2-Pin SOD-523 T/R
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.13 грн |
1N4448HWT-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 2120406 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.19 грн |
22+ | 12.73 грн |
100+ | 6.21 грн |
500+ | 4.86 грн |
1000+ | 3.38 грн |
1N4448TAP |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
на замовлення 2331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 10.32 грн |
47+ | 7.3 грн |
59+ | 5.82 грн |
79+ | 4.38 грн |
110+ | 3.12 грн |
250+ | 2.18 грн |
500+ | 1.96 грн |
525+ | 1.51 грн |
1443+ | 1.42 грн |
1N4448TAP |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
на замовлення 2331 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 12.39 грн |
29+ | 9.1 грн |
36+ | 6.98 грн |
47+ | 5.26 грн |
100+ | 3.75 грн |
250+ | 2.62 грн |
500+ | 2.36 грн |
1N4448TAP |
Виробник: Vishay
Rectifier Diode Small Signal Switching 100V 0.3A 8ns 2-Pin DO-35 Ammo
Rectifier Diode Small Signal Switching 100V 0.3A 8ns 2-Pin DO-35 Ammo
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)1N4448TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.7 грн |
30000+ | 1.61 грн |
1N4448TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 20077 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
32+ | 8.69 грн |
100+ | 4.24 грн |
500+ | 3.32 грн |
1000+ | 2.31 грн |
2000+ | 2 грн |
5000+ | 1.82 грн |
1N4448TR |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.22 грн |
39+ | 8.9 грн |
66+ | 5.2 грн |
100+ | 3.71 грн |
250+ | 3.11 грн |
737+ | 1.07 грн |
2025+ | 1.01 грн |
1N4448TR |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
на замовлення 9990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
56+ | 6.64 грн |
72+ | 4.79 грн |
88+ | 3.9 грн |
132+ | 2.6 грн |
211+ | 1.62 грн |
264+ | 1.3 грн |
500+ | 1.1 грн |
1000+ | 0.98 грн |
1027+ | 0.77 грн |
1N4448TR |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 30000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 19.46 грн |
24+ | 11.09 грн |
40+ | 6.24 грн |
100+ | 4.45 грн |
250+ | 3.74 грн |
737+ | 1.29 грн |
2025+ | 1.22 грн |
1N4448TR |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
кількість в упаковці: 1 шт
на замовлення 9990 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 7.96 грн |
43+ | 5.97 грн |
53+ | 4.68 грн |
79+ | 3.12 грн |
127+ | 1.95 грн |
250+ | 1.56 грн |
500+ | 1.31 грн |
1N4448TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.75 грн |
30000+ | 1.65 грн |
1N4448TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 55698 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.51 грн |
31+ | 8.9 грн |
100+ | 4.35 грн |
500+ | 3.41 грн |
1000+ | 2.37 грн |
2000+ | 2.05 грн |
5000+ | 1.87 грн |
1N4448TR |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 0.85 грн |
30000+ | 0.76 грн |
50000+ | 0.65 грн |
100000+ | 0.57 грн |
250000+ | 0.51 грн |
1N4448TR |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 277868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.4 грн |
66+ | 4.18 грн |
122+ | 2.25 грн |
500+ | 1.66 грн |
1000+ | 1.15 грн |
2000+ | 0.95 грн |
5000+ | 0.89 грн |
1N4448W |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Leakage current: 50µA
Power dissipation: 0.4W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Leakage current: 50µA
Power dissipation: 0.4W
Kind of package: reel; tape
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 2.3 грн |
325+ | 1.11 грн |
500+ | 0.9 грн |
1N4448W |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Leakage current: 50µA
Power dissipation: 0.4W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 300mA; 4ns; SOD123F; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Leakage current: 50µA
Power dissipation: 0.4W
Kind of package: reel; tape
кількість в упаковці: 25 шт
на замовлення 500 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 2.76 грн |
200+ | 1.38 грн |
500+ | 1.08 грн |
1025+ | 0.93 грн |
2825+ | 0.88 грн |
1N4448W |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 75V 0.15A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE GEN PURP 75V 0.15A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 8.53 грн |
49+ | 5.68 грн |
100+ | 3.05 грн |
500+ | 2.25 грн |
1000+ | 1.56 грн |
1N4448W |
Виробник: EVVO
Description: DIODE GEN PURP 100V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE GEN PURP 100V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 7.82 грн |
52+ | 5.34 грн |
100+ | 2.88 грн |
500+ | 2.12 грн |
1000+ | 1.47 грн |
1N4448W |
Виробник: Diotec Semiconductor
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R
на замовлення 1442 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
385+ | 0.8 грн |
1N4448W |
Виробник: Diotec Semiconductor
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin SOD-123F T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 0.72 грн |
1N4448W RHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 150MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.85 грн |
6000+ | 1.68 грн |
9000+ | 1.43 грн |
1N4448W RHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 150MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 17000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.66 грн |
38+ | 7.26 грн |
100+ | 3.93 грн |
500+ | 2.9 грн |
1000+ | 2.01 грн |
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