Продукція > NTE ELECTRONICS > Всі товари виробника NTE ELECTRONICS (5258) > Сторінка 53 з 88
| Фото | Назва | Виробник | Інформація |
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NTE58 | NTE Electronics |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 200V; 17A; 200W Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 17A Power dissipation: 200W Mounting: THT Frequency: 20MHz |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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NTE194 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 1W Case: TO92 Current gain: 30...250 Mounting: THT Frequency: 100...300MHz |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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NTE5671 | NTE Electronics |
Category: Triacs Description: Triac; 800V; 20A; TO220FP; Igt: 35/70mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220FP Gate current: 35/70mA Mounting: THT Kind of package: tube |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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NTE2395 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 200A Power dissipation: 150W Case: TO220 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE196 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 70V; 7A; 40W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 70V Collector current: 7A Power dissipation: 40W Case: TO220 Current gain: 30...150 Mounting: THT |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| NTE2906 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 8A; 125W; TO3 Mounting: THT Power dissipation: 125W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±14V Case: TO3 Drain-source voltage: 200V Drain current: 8A Type of transistor: N-MOSFET |
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| NTE2998 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -8A; 125W; TO3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -8A Power dissipation: 125W Case: TO3 Gate-source voltage: ±14V Mounting: THT Kind of channel: enhanced |
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NTE392 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO3PN Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO3PN Current gain: 15...75 Mounting: THT |
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NTE5558 | NTE Electronics |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30mA; TO220; THT; Ifsm: 300A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Load current: 16A Gate current: 30mA Case: TO220 Mounting: THT Max. forward impulse current: 300A Turn-on time: 2µs |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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NTE922M | NTE Electronics |
Category: THT comparators Description: IC: comparator; Cmp: 1; 200ns; 2÷36V; THT; DIP8; tube; 20nA Type of integrated circuit: comparator Number of comparators: 1 Delay time: 200ns Mounting: THT Case: DIP8 Operating temperature: 0...70°C Input offset voltage: 7.5mV Kind of package: tube Input offset current: 20nA Operating voltage: 2...36V |
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NTE219 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 115W Case: TO3 Current gain: 5...70 Mounting: THT |
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NTE5046A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 75V; DO35; single diode; 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 75V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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NTE2974 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 24A Power dissipation: 35W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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NTE859 | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; DIP14; ±15VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: THT Number of channels: 4 Case: DIP14 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 13mV Voltage supply range: ± 15V DC Power dissipation: 0.68W |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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NTE5334 | NTE Electronics |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 50A; DIP4; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 50A Case: DIP4 Electrical mounting: THT Features of semiconductor devices: glass passivated |
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| NTE4990 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 300V; 3.58A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 3.58A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
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NTE2905 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Pulsed drain current: -48A Power dissipation: 150W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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NTE2374 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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NTE157 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO126 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO126 Current gain: 15...250 Mounting: THT |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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NTE56008 | NTE Electronics |
Category: Triacs Description: Triac; 600V; 15A; TO220; Igt: 40/75mA Mounting: THT Case: TO220 Kind of package: tube Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 15A Gate current: 40/75mA |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE2311 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 15A; 115W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 15A Power dissipation: 115W Case: TO3P Mounting: THT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE2329 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 200V; 15A; 150W; TO3-PBL Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 15A Power dissipation: 150W Case: TO3-PBL Current gain: 35...160 Mounting: THT Kind of package: bulk Frequency: 25MHz |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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NTE1968 | NTE Electronics |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 10V; 1A; TO220FP; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 10V Output current: 1A Case: TO220FP Mounting: THT Operating temperature: -30...75°C Number of channels: 1 Input voltage: 12.5...25V |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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NTE2376 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE74LS03 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14; OUT: open collector Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: TTL Mounting: THT Case: DIP14 Kind of output: open collector |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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NTE331 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 90W Case: TO220 Current gain: 5...250 Mounting: THT |
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NTE332 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 15A; 90W; TO220 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 90W Case: TO220 Current gain: 5...250 Mounting: THT |
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NTE107 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 12V; 25mA; 0.2W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 25mA Power dissipation: 0.2W Case: TO92 Current gain: 75 Mounting: THT Frequency: 0.7...2.1GHz |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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NTE229 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 50mA; 0.425W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 50mA Power dissipation: 0.425W Case: TO92 Current gain: 30...225 Mounting: THT |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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NTE5319 | NTE Electronics |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: wire Ø 1.3mm Kind of package: bulk |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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NTE4558B | NTE Electronics |
Category: Decoders, multiplexers, switches Description: IC: digital; BCD to 7-segment,decoder; Ch: 1; IN: 4; CMOS; THT; DIP16 Operating temperature: -55...125°C Number of channels: 1 Quiescent current: 600µA Technology: CMOS Kind of integrated circuit: BCD to 7-segment; decoder Mounting: THT Case: DIP16 Number of inputs: 4 Number of outputs: 7 Supply voltage: 3...10V DC Type of integrated circuit: digital |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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NTE186 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO202-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 12.5W Case: TO202-3 Current gain: 20...220 Mounting: THT Frequency: 50MHz |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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| NTE108-1 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 15V; 50mA; 0.625W; TO106 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 50mA Power dissipation: 0.625W Case: TO106 Current gain: 20...200 Mounting: THT |
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NTE966 | NTE Electronics |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; TO220; THT; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 1A Case: TO220 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 14.5...30V |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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NTE2989 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 36A Power dissipation: 50W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE2696 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.3W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.1A Power dissipation: 0.3W Case: TO92 Current gain: 350...700 Mounting: THT Frequency: 100MHz |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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NTE31 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Current gain: 100...200 Mounting: THT Frequency: 100MHz |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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NTE2909 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 230A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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NTE123A | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.8A; 1.2W; TO18 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Power dissipation: 1.2W Case: TO18 Current gain: 35...300 Mounting: THT |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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NTE159 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 0.8A; 0.625W; TO92 Polarisation: bipolar Mounting: THT Case: TO92 Collector-emitter voltage: 80V Current gain: 25...250 Collector current: 0.8A Type of transistor: PNP Power dissipation: 0.625W |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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| NTE6208 | NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 150A; TO3; Ufmax: 1.4V; 200ns Case: TO3 Mounting: THT Max. off-state voltage: 0.4kV Max. load current: 50A Max. forward voltage: 1.4V Load current: 15A Semiconductor structure: common cathode; double Reverse recovery time: 200ns Max. forward impulse current: 150A Leakage current: 5mA Type of diode: rectifying Features of semiconductor devices: fast switching |
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NTE5022A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; DO35; single diode; 500nA Mounting: THT Power dissipation: 0.5W Type of diode: Zener Zener voltage: 13V Semiconductor structure: single diode Tolerance: ±5% Leakage current: 0.5µA Case: DO35 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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NTE2916 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 35A; Idm: 200A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 35A Pulsed drain current: 200A Power dissipation: 300W Case: TO247 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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NTE2991 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 390A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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NTE7239 | NTE Electronics |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...32V Output current: 5A Case: TO220 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...35V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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NTE128 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 1A; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 1A Case: TO39 Current gain: 15...300 Mounting: THT Frequency: 100...400MHz |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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NTE778A | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; Ch: 2; DIP8; ±18VDC Operating temperature: 0...70°C Number of channels: 2 Input offset voltage: 7.5mV Slew rate: 0.5V/μs Voltage supply range: ± 18V DC Mounting: THT Case: DIP8 Type of integrated circuit: operational amplifier |
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NTE2659 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 2A Power dissipation: 1W Case: TO92 Current gain: 15...300 Mounting: THT Frequency: 240MHz |
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| NTE4966 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
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NTE577 | NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 5A; Ifsm: 200A; Ø9,4x6,35mm; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: Ø9,4x6,35mm Max. forward voltage: 1.7V Reverse recovery time: 70ns |
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NTE887M | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; Ch: 1; DIP8; ±18VDC Type of integrated circuit: operational amplifier Mounting: THT Number of channels: 1 Case: DIP8 Slew rate: 3.5V/μs Operating temperature: 0...70°C Input offset voltage: 20mV Voltage supply range: ± 18V DC Power dissipation: 0.68W |
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NTE2907 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of channel: enhanced |
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NTE74LS27 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; TTL; THT; DIP14 Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Technology: TTL Mounting: THT Case: DIP14 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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NTE74LS273 | NTE Electronics |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; TTL; THT; DIP20 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: TTL Mounting: THT Case: DIP20 |
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NTE74LS279 | NTE Electronics |
Category: Latches Description: IC: digital; RS latch; Ch: 4; TTL; THT; DIP16 Type of integrated circuit: digital Kind of integrated circuit: RS latch Number of channels: 4 Technology: TTL Mounting: THT Case: DIP16 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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NTE935 | NTE Electronics |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO3; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...32V Output current: 5A Case: TO3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...35V |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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NTE2918 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W; TO220 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Pulsed drain current: -110A Power dissipation: 110W Case: TO220 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of channel: enhanced |
товар відсутній |
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NTE66 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 77W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 77W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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NTE5656 | NTE Electronics |
Category: Triacs Description: Triac; 400V; 0.8A; TO92; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.8A Case: TO92 Gate current: 5mA Mounting: THT Kind of package: bulk |
товар відсутній |
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NTE254 | NTE Electronics |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO126 Current gain: 2k Mounting: THT Kind of package: bulk |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| NTE58 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 17A; 200W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 17A
Power dissipation: 200W
Mounting: THT
Frequency: 20MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 17A; 200W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 17A
Power dissipation: 200W
Mounting: THT
Frequency: 20MHz
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 920.07 грн |
| 2+ | 596.95 грн |
| 4+ | 564.09 грн |
| NTE194 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.67 грн |
| 6+ | 63.67 грн |
| 10+ | 56.14 грн |
| 16+ | 50.66 грн |
| NTE5671 |
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Виробник: NTE Electronics
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35/70mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35/70mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 432.76 грн |
| 3+ | 355.29 грн |
| NTE2395 |
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Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.11 грн |
| 3+ | 283.41 грн |
| 8+ | 268.35 грн |
| NTE196 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 7A; 40W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 7A
Power dissipation: 40W
Case: TO220
Current gain: 30...150
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 7A; 40W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 7A
Power dissipation: 40W
Case: TO220
Current gain: 30...150
Mounting: THT
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.44 грн |
| 8+ | 104.74 грн |
| NTE2906 |
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Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; 125W; TO3
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±14V
Case: TO3
Drain-source voltage: 200V
Drain current: 8A
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; 125W; TO3
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±14V
Case: TO3
Drain-source voltage: 200V
Drain current: 8A
Type of transistor: N-MOSFET
товар відсутній
| NTE2998 |
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Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -8A; 125W; TO3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -8A
Power dissipation: 125W
Case: TO3
Gate-source voltage: ±14V
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -8A; 125W; TO3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -8A
Power dissipation: 125W
Case: TO3
Gate-source voltage: ±14V
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE392 |
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Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO3PN
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO3PN
Current gain: 15...75
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO3PN
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO3PN
Current gain: 15...75
Mounting: THT
товар відсутній
| NTE5558 |
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Виробник: NTE Electronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30mA; TO220; THT; Ifsm: 300A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 30mA
Case: TO220
Mounting: THT
Max. forward impulse current: 300A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30mA; TO220; THT; Ifsm: 300A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 30mA
Case: TO220
Mounting: THT
Max. forward impulse current: 300A
Turn-on time: 2µs
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 788.84 грн |
| 2+ | 641.45 грн |
| 3+ | 640.76 грн |
| 4+ | 605.85 грн |
| NTE922M |
|
Виробник: NTE Electronics
Category: THT comparators
Description: IC: comparator; Cmp: 1; 200ns; 2÷36V; THT; DIP8; tube; 20nA
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: tube
Input offset current: 20nA
Operating voltage: 2...36V
Category: THT comparators
Description: IC: comparator; Cmp: 1; 200ns; 2÷36V; THT; DIP8; tube; 20nA
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: tube
Input offset current: 20nA
Operating voltage: 2...36V
товар відсутній
| NTE219 |
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Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Current gain: 5...70
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Current gain: 5...70
Mounting: THT
товар відсутній
| NTE5046A |
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Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 75V; DO35; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 75V; DO35; single diode; 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.87 грн |
| 14+ | 26.22 грн |
| NTE2974 |
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Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.27 грн |
| 3+ | 299.16 грн |
| 8+ | 282.73 грн |
| NTE859 |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; DIP14; ±15VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: THT
Number of channels: 4
Case: DIP14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 13mV
Voltage supply range: ± 15V DC
Power dissipation: 0.68W
Category: THT operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; DIP14; ±15VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: THT
Number of channels: 4
Case: DIP14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 13mV
Voltage supply range: ± 15V DC
Power dissipation: 0.68W
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.14 грн |
| 3+ | 223.17 грн |
| 5+ | 191.68 грн |
| 12+ | 181.41 грн |
| NTE5334 |
|
Виробник: NTE Electronics
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 50A; DIP4; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DIP4
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 50A; DIP4; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DIP4
Electrical mounting: THT
Features of semiconductor devices: glass passivated
товар відсутній
| NTE4990 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 300V; 3.58A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 3.58A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 300V; 3.58A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 3.58A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
товар відсутній
| NTE2905 |
|
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303 грн |
| 3+ | 253.29 грн |
| 4+ | 208.8 грн |
| 11+ | 197.16 грн |
| NTE2374 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 337.65 грн |
| 3+ | 282.04 грн |
| 4+ | 241.65 грн |
| 10+ | 228.65 грн |
| NTE157 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO126
Current gain: 15...250
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO126
Current gain: 15...250
Mounting: THT
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.32 грн |
| 10+ | 83.52 грн |
| 25+ | 80.78 грн |
| 26+ | 78.73 грн |
| NTE56008 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 600V; 15A; TO220; Igt: 40/75mA
Mounting: THT
Case: TO220
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 15A
Gate current: 40/75mA
Category: Triacs
Description: Triac; 600V; 15A; TO220; Igt: 40/75mA
Mounting: THT
Case: TO220
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 15A
Gate current: 40/75mA
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.27 грн |
| 3+ | 247.82 грн |
| 4+ | 221.8 грн |
| NTE2311 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 15A; 115W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 15A
Power dissipation: 115W
Case: TO3P
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 15A; 115W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 15A
Power dissipation: 115W
Case: TO3P
Mounting: THT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1018.86 грн |
| 2+ | 672.94 грн |
| 4+ | 636.65 грн |
| NTE2329 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 15A; 150W; TO3-PBL
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 15A
Power dissipation: 150W
Case: TO3-PBL
Current gain: 35...160
Mounting: THT
Kind of package: bulk
Frequency: 25MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 15A; 150W; TO3-PBL
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 15A
Power dissipation: 150W
Case: TO3-PBL
Current gain: 35...160
Mounting: THT
Kind of package: bulk
Frequency: 25MHz
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.65 грн |
| 3+ | 336.81 грн |
| 7+ | 318.33 грн |
| NTE1968 |
|
Виробник: NTE Electronics
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 1A; TO220FP; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 1A
Case: TO220FP
Mounting: THT
Operating temperature: -30...75°C
Number of channels: 1
Input voltage: 12.5...25V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 1A; TO220FP; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 1A
Case: TO220FP
Mounting: THT
Operating temperature: -30...75°C
Number of channels: 1
Input voltage: 12.5...25V
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.59 грн |
| 3+ | 188.26 грн |
| NTE2376 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 770.41 грн |
| 2+ | 521.65 грн |
| 3+ | 520.96 грн |
| 5+ | 492.89 грн |
| NTE74LS03 |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14; OUT: open collector
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: THT
Case: DIP14
Kind of output: open collector
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14; OUT: open collector
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: THT
Case: DIP14
Kind of output: open collector
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.56 грн |
| 16+ | 51.34 грн |
| NTE331 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO220
Current gain: 5...250
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO220
Current gain: 5...250
Mounting: THT
товар відсутній
| NTE332 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 90W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO220
Current gain: 5...250
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 90W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO220
Current gain: 5...250
Mounting: THT
товар відсутній
| NTE107 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 12V; 25mA; 0.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 25mA
Power dissipation: 0.2W
Case: TO92
Current gain: 75
Mounting: THT
Frequency: 0.7...2.1GHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 12V; 25mA; 0.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 25mA
Power dissipation: 0.2W
Case: TO92
Current gain: 75
Mounting: THT
Frequency: 0.7...2.1GHz
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.31 грн |
| NTE229 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 50mA; 0.425W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.425W
Case: TO92
Current gain: 30...225
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 50mA; 0.425W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.425W
Case: TO92
Current gain: 30...225
Mounting: THT
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.86 грн |
| 4+ | 104.06 грн |
| 9+ | 88.99 грн |
| NTE5319 |
|
Виробник: NTE Electronics
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: wire Ø 1.3mm
Kind of package: bulk
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: wire Ø 1.3mm
Kind of package: bulk
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.95 грн |
| 3+ | 171.14 грн |
| 6+ | 135.55 грн |
| 10+ | 134.86 грн |
| 17+ | 128.02 грн |
| NTE4558B |
Виробник: NTE Electronics
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder; Ch: 1; IN: 4; CMOS; THT; DIP16
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 600µA
Technology: CMOS
Kind of integrated circuit: BCD to 7-segment; decoder
Mounting: THT
Case: DIP16
Number of inputs: 4
Number of outputs: 7
Supply voltage: 3...10V DC
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder; Ch: 1; IN: 4; CMOS; THT; DIP16
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 600µA
Technology: CMOS
Kind of integrated circuit: BCD to 7-segment; decoder
Mounting: THT
Case: DIP16
Number of inputs: 4
Number of outputs: 7
Supply voltage: 3...10V DC
Type of integrated circuit: digital
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 174.72 грн |
| 6+ | 137.6 грн |
| 16+ | 130.07 грн |
| NTE186 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO202-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 12.5W
Case: TO202-3
Current gain: 20...220
Mounting: THT
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO202-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 12.5W
Case: TO202-3
Current gain: 20...220
Mounting: THT
Frequency: 50MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 588.31 грн |
| 3+ | 376.52 грн |
| 6+ | 355.98 грн |
| NTE108-1 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 15V; 50mA; 0.625W; TO106
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.625W
Case: TO106
Current gain: 20...200
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 15V; 50mA; 0.625W; TO106
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.625W
Case: TO106
Current gain: 20...200
Mounting: THT
товар відсутній
| NTE966 |
|
Виробник: NTE Electronics
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; TO220; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: TO220
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 14.5...30V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; TO220; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: TO220
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 14.5...30V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.99 грн |
| 10+ | 78.73 грн |
| 12+ | 67.77 грн |
| 32+ | 64.35 грн |
| NTE2989 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 683.42 грн |
| 2+ | 442.24 грн |
| 5+ | 418.28 грн |
| NTE2696 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.3W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.3W
Case: TO92
Current gain: 350...700
Mounting: THT
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.3W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.3W
Case: TO92
Current gain: 350...700
Mounting: THT
Frequency: 100MHz
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.44 грн |
| 4+ | 111.59 грн |
| 10+ | 85.57 грн |
| 26+ | 80.78 грн |
| NTE31 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Current gain: 100...200
Mounting: THT
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Current gain: 100...200
Mounting: THT
Frequency: 100MHz
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.33 грн |
| 8+ | 111.59 грн |
| NTE2909 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202 грн |
| 3+ | 168.41 грн |
| 6+ | 142.39 грн |
| 16+ | 134.86 грн |
| 25+ | 133.49 грн |
| NTE123A |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 1.2W; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 1.2W
Case: TO18
Current gain: 35...300
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 1.2W; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 1.2W
Case: TO18
Current gain: 35...300
Mounting: THT
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.47 грн |
| 10+ | 84.2 грн |
| 11+ | 75.3 грн |
| 29+ | 71.2 грн |
| NTE159 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.8A; 0.625W; TO92
Polarisation: bipolar
Mounting: THT
Case: TO92
Collector-emitter voltage: 80V
Current gain: 25...250
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.625W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.8A; 0.625W; TO92
Polarisation: bipolar
Mounting: THT
Case: TO92
Collector-emitter voltage: 80V
Current gain: 25...250
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.625W
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.93 грн |
| 10+ | 65.72 грн |
| 14+ | 56.82 грн |
| 39+ | 54.08 грн |
| NTE6208 |
|
Виробник: NTE Electronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 150A; TO3; Ufmax: 1.4V; 200ns
Case: TO3
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 50A
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: common cathode; double
Reverse recovery time: 200ns
Max. forward impulse current: 150A
Leakage current: 5mA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 150A; TO3; Ufmax: 1.4V; 200ns
Case: TO3
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 50A
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: common cathode; double
Reverse recovery time: 200ns
Max. forward impulse current: 150A
Leakage current: 5mA
Type of diode: rectifying
Features of semiconductor devices: fast switching
товар відсутній
| NTE5022A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; DO35; single diode; 500nA
Mounting: THT
Power dissipation: 0.5W
Type of diode: Zener
Zener voltage: 13V
Semiconductor structure: single diode
Tolerance: ±5%
Leakage current: 0.5µA
Case: DO35
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; DO35; single diode; 500nA
Mounting: THT
Power dissipation: 0.5W
Type of diode: Zener
Zener voltage: 13V
Semiconductor structure: single diode
Tolerance: ±5%
Leakage current: 0.5µA
Case: DO35
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.87 грн |
| 14+ | 26.22 грн |
| NTE2916 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; Idm: 200A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; Idm: 200A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 692.26 грн |
| 2+ | 444.97 грн |
| NTE2991 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.35 грн |
| 3+ | 224.54 грн |
| 5+ | 185.52 грн |
| 12+ | 175.94 грн |
| 25+ | 175.25 грн |
| NTE7239 |
|
Виробник: NTE Electronics
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...32V
Output current: 5A
Case: TO220
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...35V
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...32V
Output current: 5A
Case: TO220
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...35V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.3 грн |
| 3+ | 225.91 грн |
| 5+ | 185.52 грн |
| 12+ | 175.25 грн |
| NTE128 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 1A; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 1A
Case: TO39
Current gain: 15...300
Mounting: THT
Frequency: 100...400MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 1A; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 1A
Case: TO39
Current gain: 15...300
Mounting: THT
Frequency: 100...400MHz
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.26 грн |
| 3+ | 155.4 грн |
| NTE778A |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; DIP8; ±18VDC
Operating temperature: 0...70°C
Number of channels: 2
Input offset voltage: 7.5mV
Slew rate: 0.5V/μs
Voltage supply range: ± 18V DC
Mounting: THT
Case: DIP8
Type of integrated circuit: operational amplifier
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 2; DIP8; ±18VDC
Operating temperature: 0...70°C
Number of channels: 2
Input offset voltage: 7.5mV
Slew rate: 0.5V/μs
Voltage supply range: ± 18V DC
Mounting: THT
Case: DIP8
Type of integrated circuit: operational amplifier
товар відсутній
| NTE2659 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Frequency: 240MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Frequency: 240MHz
товар відсутній
| NTE4966 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
товар відсутній
| NTE577 |
|
Виробник: NTE Electronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5A; Ifsm: 200A; Ø9,4x6,35mm; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: Ø9,4x6,35mm
Max. forward voltage: 1.7V
Reverse recovery time: 70ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5A; Ifsm: 200A; Ø9,4x6,35mm; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: Ø9,4x6,35mm
Max. forward voltage: 1.7V
Reverse recovery time: 70ns
товар відсутній
| NTE887M |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 1; DIP8; ±18VDC
Type of integrated circuit: operational amplifier
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 3.5V/μs
Operating temperature: 0...70°C
Input offset voltage: 20mV
Voltage supply range: ± 18V DC
Power dissipation: 0.68W
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 1; DIP8; ±18VDC
Type of integrated circuit: operational amplifier
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 3.5V/μs
Operating temperature: 0...70°C
Input offset voltage: 20mV
Voltage supply range: ± 18V DC
Power dissipation: 0.68W
товар відсутній
| NTE2907 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE74LS27 |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: TTL
Mounting: THT
Case: DIP14
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: TTL
Mounting: THT
Case: DIP14
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.12 грн |
| 9+ | 91.73 грн |
| NTE74LS273 |
Виробник: NTE Electronics
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; TTL; THT; DIP20
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: TTL
Mounting: THT
Case: DIP20
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; TTL; THT; DIP20
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: TTL
Mounting: THT
Case: DIP20
товар відсутній
| NTE74LS279 |
Виробник: NTE Electronics
Category: Latches
Description: IC: digital; RS latch; Ch: 4; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Technology: TTL
Mounting: THT
Case: DIP16
Category: Latches
Description: IC: digital; RS latch; Ch: 4; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Technology: TTL
Mounting: THT
Case: DIP16
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.15 грн |
| NTE935 |
|
Виробник: NTE Electronics
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO3; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...32V
Output current: 5A
Case: TO3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...35V
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷32V; 5A; TO3; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...32V
Output current: 5A
Case: TO3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...35V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1464.88 грн |
| 2+ | 1286.32 грн |
| NTE2918 |
|
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE66 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 77W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 77W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 77W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 77W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 453.4 грн |
| 3+ | 321.07 грн |
| 7+ | 303.27 грн |
| NTE5656 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 400V; 0.8A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 400V; 0.8A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: bulk
товар відсутній
| NTE254 |
|
Виробник: NTE Electronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 2k
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Current gain: 2k
Mounting: THT
Kind of package: bulk
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.06 грн |
| 8+ | 104.06 грн |
| 10+ | 103.37 грн |
| 21+ | 98.58 грн |