Модульні елементи > RFID мітки, зчитувачі та програматори
Опис: Мітка для копіювання ключів серії DS1990A-F5 та китайських аналогів TM1990A-F5, RW1990. Інтерфейс 1-Wire. Ключ не схильний до дії магнітних і статичних полів. Вирішує проблему неповної сумісності ключа RW2004 (ТМ2004) на домофонах. Підходить для роботи з дублікаторами ключів: Keymaster 3RF, Keymaster 4RF. Діаметр таблетки: 16,25 мм. Колір синій.
Тип: Rewritable

Виробник: Infineon Technologies
MOSFET TRENCH >=100V

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 14A T/R

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP ALUM 100000UF 20% 25V SCREW
Tolerance: ±20%
Packaging: Bulk
Package / Case: Radial, Can - Screw Terminals
Size / Dimension: 2.559" Dia (65.00mm)
Polarization: Polar
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Lead Spacing: 1.122" (28.50mm)
ESR (Equivalent Series Resistance): 7mOhm @ 100Hz
Lifetime @ Temp.: 15000 Hrs @ 85°C
Height - Seated (Max): 4.358" (110.70mm)
Part Status: Active
Capacitance: 100000 µF
Voltage - Rated: 25 V
Impedance: 6 mOhms
Ripple Current @ Low Frequency: 19.6 A @ 100 Hz

Виробник: Weidmuller
Terminal Block Tools & Accessories ZPS 2.5/1AN/QV/1

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 14A 8-Pin TDSON EP T/R

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 14A 8-Pin TDSON EP T/R

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V