Результат пошуку "1,00E+11" : 38
Вид перегляду :
Мінімальне замовлення: 21
Мінімальне замовлення: 88
Мінімальне замовлення: 1000
Мінімальне замовлення: 71
Мінімальне замовлення: 6
Мінімальне замовлення: 90
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 100E1111-1.00-9-0 | TE Connectivity |
Category: Single Core Cable - Strand Description: 100E1111-1.00-9-0 |
на замовлення 2700 шт: термін постачання 21-30 дні (днів) |
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| 100E1111-1.00-9-0 | TE Connectivity | 100E1111-1.00-9-0 |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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| 100E1121-1.00-9/9-0CK0001 | TE Connectivity | 100E1121-1.00-9/9-0CK0001 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| 100E1131-0.50-9/9/9-0 | TE Connectivity | ThreeConductorCable, Shielded And Jacketed 300 Volt In Accordance With En 50306-3 |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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BUK9K45-100E,115 | NEXPERIA |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 83A Drain-source voltage: 100V Drain current: 15A On-state resistance: 124mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 53W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±10V |
на замовлення 1275 шт: термін постачання 21-30 дні (днів) |
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EWH1JM100E11OT | AISHI |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 63VDC; Ø6.3x11mm; Pitch: 2.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 63V DC Body dimensions: Ø6.3x11mm Terminal pitch: 2.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
на замовлення 29790 шт: термін постачання 21-30 дні (днів) |
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100E110GMN3600XJ16 | KYOCERA AVX Components |
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Microstrip SMD 125°C |
товар відсутній |
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100E110GT3600XJ24 | KYOCERA AVX Components |
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125°C |
товар відсутній |
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| 100E110GT3600XT | Kyocera AVX Components |
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125C Low ESR Medical T/R |
товар відсутній |
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100E111FTN3600XT | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R |
товар відсутній |
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| 100E111FTN3600XT | Kyocera AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R |
товар відсутній |
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| 100E111FW3600XT | Kyocera AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR Medical T/R |
товар відсутній |
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| 100E111FWN3600XT | Kyocera AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R |
товар відсутній |
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100E111FWN3600XT | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R |
товар відсутній |
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100E111GT3600XJ24 | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 2% Pad SMD 125°C |
товар відсутній |
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100E111JPN3600XT | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R |
товар відсутній |
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| 100E111JPN3600XT | Kyocera AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R |
товар відсутній |
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| 100E111JT3600XT | Kyocera AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R |
товар відсутній |
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100E111JT3600XT | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R |
товар відсутній |
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100E111JW3600XJ24 | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C |
товар відсутній |
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100E111JW3600XT | KYOCERA AVX Components |
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R |
товар відсутній |
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| 100E111JW3600XT | Kyocera AVX Components |
CapCeramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R |
товар відсутній |
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100E112GMS1000XJ16 | KYOCERA AVX Components |
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Microstrip SMD 3838 125°C |
товар відсутній |
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100E112GW1000XJ24 | KYOCERA AVX Components |
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Pad SMD 3838 125°C |
товар відсутній |
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100E112JAR1000XJ16 | KYOCERA AVX Components |
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 5% Axial Ribbon SMD 125°C |
товар відсутній |
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| 100E112JW1000XT | Kyocera AVX Components |
Porcelain High RF Power Multilayer Capacitor |
товар відсутній |
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| BUK7631-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 136A Drain-source voltage: 100V Drain current: 24A On-state resistance: 84mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 96W Polarisation: unipolar Gate charge: 29.4nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
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BUK765R0-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404 Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 115A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 349W Polarisation: unipolar Gate charge: 180nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
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| BUK768R1-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 439A Drain-source voltage: 100V Drain current: 78A On-state resistance: 21.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 263W Polarisation: unipolar Gate charge: 108nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
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| BUK9615-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 266A Drain-source voltage: 100V Drain current: 47A On-state resistance: 41mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 182W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9637-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 123A; 96W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 123A Drain-source voltage: 100V Drain current: 22A On-state resistance: 0.102Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 96W Polarisation: unipolar Gate charge: 22.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK965R8-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 591A Drain-source voltage: 100V Drain current: 105A On-state resistance: 16mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 349W Polarisation: unipolar Gate charge: 133nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK969R3-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 405A; 263W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 405A Drain-source voltage: 100V Drain current: 71A On-state resistance: 25.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 263W Polarisation: unipolar Gate charge: 94.3nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9K29-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 21A; Idm: 118A; 68W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 118A Drain-source voltage: 100V Drain current: 21A On-state resistance: 80mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 68W Polarisation: unipolar Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9K89-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 8.9A On-state resistance: 245mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 38W Polarisation: unipolar Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9Y113-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 100V Drain current: 8.5A On-state resistance: 312mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 45W Polarisation: unipolar Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9Y15-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Pulsed drain current: 274A Drain-source voltage: 100V Drain current: 49A On-state resistance: 41.4mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 195W Polarisation: unipolar Gate charge: 45.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
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| BUK9Y22-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Pulsed drain current: 197A Drain-source voltage: 100V Drain current: 35A On-state resistance: 60.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 147W Polarisation: unipolar Gate charge: 35.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |
| 100E1111-1.00-9-0 |
на замовлення 2700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 108.65 грн |
| 800+ | 99.51 грн |
| 2000+ | 98.14 грн |
| 100E1111-1.00-9-0 |
Виробник: TE Connectivity
100E1111-1.00-9-0
100E1111-1.00-9-0
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 88+ | 133.84 грн |
| 200+ | 130.72 грн |
| 400+ | 129.17 грн |
| 800+ | 121.55 грн |
| 2000+ | 110.47 грн |
| 100E1121-1.00-9/9-0CK0001 |
Виробник: TE Connectivity
100E1121-1.00-9/9-0CK0001
100E1121-1.00-9/9-0CK0001
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 146.29 грн |
| 100E1131-0.50-9/9/9-0 |
Виробник: TE Connectivity
ThreeConductorCable, Shielded And Jacketed 300 Volt In Accordance With En 50306-3
ThreeConductorCable, Shielded And Jacketed 300 Volt In Accordance With En 50306-3
на замовлення 444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 71+ | 165.74 грн |
| 200+ | 161.85 грн |
| 350+ | 158.74 грн |
| BUK9K45-100E,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 83A
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 124mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 83A
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 124mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
на замовлення 1275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.71 грн |
| 16+ | 51.06 грн |
| 43+ | 48.27 грн |
| 100+ | 47.35 грн |
| 500+ | 46.67 грн |
| EWH1JM100E11OT |
|
Виробник: AISHI
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 63VDC; Ø6.3x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 63V DC
Body dimensions: Ø6.3x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 63VDC; Ø6.3x11mm; Pitch: 2.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 63V DC
Body dimensions: Ø6.3x11mm
Terminal pitch: 2.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
на замовлення 29790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.4 грн |
| 160+ | 2.15 грн |
| 500+ | 0.93 грн |
| 1000+ | 0.8 грн |
| 2740+ | 0.75 грн |
| 100E110GMN3600XJ16 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Microstrip SMD 125°C
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Microstrip SMD 125°C
товар відсутній
| 100E110GT3600XJ24 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125°C
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125°C
товар відсутній
| 100E110GT3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125C Low ESR Medical T/R
Cap Ceramic 11pF 3600V +90±30ppm/C 2% Pad SMD 125C Low ESR Medical T/R
товар відсутній
| 100E111FTN3600XT |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R
товар відсутній
| 100E111FTN3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R
товар відсутній
| 100E111FW3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR Medical T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR Medical T/R
товар відсутній
| 100E111FWN3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125C Low ESR T/R
товар відсутній
| 100E111FWN3600XT |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 1% Pad SMD 125°C Low ESR T/R
товар відсутній
| 100E111GT3600XJ24 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 2% Pad SMD 125°C
Cap Ceramic 110pF 3600V +90±30ppm/C 2% Pad SMD 125°C
товар відсутній
| 100E111JPN3600XT |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R
товар відсутній
| 100E111JPN3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R
товар відсутній
| 100E111JT3600XT |
|
Виробник: Kyocera AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125C Low ESR T/R
товар відсутній
| 100E111JT3600XT |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR T/R
товар відсутній
| 100E111JW3600XJ24 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C
товар відсутній
| 100E111JW3600XT |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R
Cap Ceramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R
товар відсутній
| 100E111JW3600XT |
|
Виробник: Kyocera AVX Components
CapCeramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R
CapCeramic 110pF 3600V +90±30ppm/C 5% Pad SMD 125°C Low ESR Medical T/R
товар відсутній
| 100E112GMS1000XJ16 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Microstrip SMD 3838 125°C
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Microstrip SMD 3838 125°C
товар відсутній
| 100E112GW1000XJ24 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Pad SMD 3838 125°C
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 2% Pad SMD 3838 125°C
товар відсутній
| 100E112JAR1000XJ16 |
|
Виробник: KYOCERA AVX Components
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 5% Axial Ribbon SMD 125°C
Cap Ceramic 0.0011uF 1000V +90±30ppm/C 5% Axial Ribbon SMD 125°C
товар відсутній
| 100E112JW1000XT |
|
Виробник: Kyocera AVX Components
Porcelain High RF Power Multilayer Capacitor
Porcelain High RF Power Multilayer Capacitor
товар відсутній
| BUK7631-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 136A
Drain-source voltage: 100V
Drain current: 24A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 29.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 136A
Drain-source voltage: 100V
Drain current: 24A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 29.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BUK765R0-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BUK768R1-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 439A
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 439A
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BUK9615-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 266A
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 266A
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9637-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 123A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 123A
Drain-source voltage: 100V
Drain current: 22A
On-state resistance: 0.102Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 22.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 123A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 123A
Drain-source voltage: 100V
Drain current: 22A
On-state resistance: 0.102Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 22.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK965R8-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 591A
Drain-source voltage: 100V
Drain current: 105A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 133nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 591A
Drain-source voltage: 100V
Drain current: 105A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 133nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK969R3-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 405A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 405A
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 25.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 94.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 405A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 405A
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 25.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 94.3nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9K29-100E,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 21A; Idm: 118A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 118A
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 21A; Idm: 118A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 118A
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9K89-100E,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 8.9A
On-state resistance: 245mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 8.9A
On-state resistance: 245mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9Y113-100E,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 100V
Drain current: 8.5A
On-state resistance: 312mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 8.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 100V
Drain current: 8.5A
On-state resistance: 312mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 8.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9Y15-100E,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 274A
Drain-source voltage: 100V
Drain current: 49A
On-state resistance: 41.4mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 195W
Polarisation: unipolar
Gate charge: 45.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 274A
Drain-source voltage: 100V
Drain current: 49A
On-state resistance: 41.4mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 195W
Polarisation: unipolar
Gate charge: 45.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній
| BUK9Y22-100E,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 197A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 60.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Gate charge: 35.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Pulsed drain current: 197A
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 60.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Gate charge: 35.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
товар відсутній