15KP180CA

15KP180CA MDE Semiconductor Inc


15KP_Series.pdf Виробник: MDE Semiconductor Inc
Description: TVS DIODE BP 180VRWM 288.5VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52.3A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 288.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+669.67 грн
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Технічний опис 15KP180CA MDE Semiconductor Inc

Description: TVS DIODE BP 180VRWM 288.5VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 52.3A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 201.1V, Voltage - Clamping (Max) @ Ipp: 288.5V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.

Інші пропозиції 15KP180CA

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
15KP180CA 15KP180CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 52.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
15KP180CA 15KP180CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 52.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній