15KP28CA

15KP28CA MDE Semiconductor Inc


15KP_Series.pdf Виробник: MDE Semiconductor Inc
Description: TVS DIODE BP 28VRWM 47.5VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 317.9A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+669.67 грн
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Технічний опис 15KP28CA MDE Semiconductor Inc

Description: TVS DIODE BP 28VRWM 47.5VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 317.9A, Voltage - Reverse Standoff (Typ): 28V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 31.28V, Voltage - Clamping (Max) @ Ipp: 47.5V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No, Part Status: Active.

Інші пропозиції 15KP28CA

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
15KP28CA 15KP28CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 31.28V; 317.9A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 31.28V
Max. forward impulse current: 317.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 50µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
15KP28CA 15KP28CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 31.28V; 317.9A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 31.28V
Max. forward impulse current: 317.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 50µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній