Результат пошуку "19.0/9.5 ???ta" : 56

Вид перегляду :
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
8166 8166 Radial Magnets, Inc. Disk%20Neodymium%20Magnets%20N35-8166.pdf Description: MAGNET 0.375"D X 0.750"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.375" Dia x 0.750" H (9.53mm x 19.0mm)
Gauss Strength: 5551G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
2+207.63 грн
10+ 162.98 грн
25+ 132.28 грн
50+ 115.46 грн
Мінімальне замовлення: 2
8169 8169 Radial Magnets, Inc. Disk%20Neodymium%20Magnets%20N35-8169.pdf Description: MAGNET 0.750"D X 0.375"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.750" Dia x 0.375" H (19.0mm x 9.53mm)
Gauss Strength: 4172G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
2+201.21 грн
10+ 157.89 грн
Мінімальне замовлення: 2
BUK6Y19-30PX BUK6Y19-30PX Nexperia USA Inc. BUK6Y19-30P.pdf Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
1500+26.14 грн
3000+ 23.7 грн
7500+ 22.57 грн
10500+ 20.2 грн
Мінімальне замовлення: 1500
BUK6Y19-30PX BUK6Y19-30PX Nexperia USA Inc. BUK6Y19-30P.pdf Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
на замовлення 14880 шт:
термін постачання 21-31 дні (днів)
5+59.22 грн
10+ 46.86 грн
100+ 36.46 грн
500+ 29 грн
Мінімальне замовлення: 5
DMP1011LFVQ-7 DMP1011LFVQ-7 Diodes Incorporated DMP1011LFVQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
2000+12.82 грн
6000+ 11.72 грн
10000+ 10.88 грн
50000+ 9.72 грн
Мінімальне замовлення: 2000
FQB19N10LTM FQB19N10LTM Fairchild Semiconductor FAIRS18320-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
на замовлення 5002 шт:
термін постачання 21-31 дні (днів)
503+39.53 грн
Мінімальне замовлення: 503
NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)
3+130.57 грн
10+ 104.37 грн
100+ 83.07 грн
500+ 65.97 грн
Мінімальне замовлення: 3
NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+61.93 грн
Мінімальне замовлення: 1500
NVTFS6H850NTAG NVTFS6H850NTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+28.75 грн
Мінімальне замовлення: 1500
NVTFS6H850NTAG NVTFS6H850NTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)
5+64.93 грн
10+ 51.6 грн
100+ 40.11 грн
500+ 31.9 грн
Мінімальне замовлення: 5
NVTFS6H850NWFTAG NVTFS6H850NWFTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+33.23 грн
Мінімальне замовлення: 1500
NVTFS6H850NWFTAG NVTFS6H850NWFTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
4+75.63 грн
10+ 59.57 грн
100+ 46.34 грн
500+ 36.87 грн
Мінімальне замовлення: 4
RJK5014DPP-E0#T2 RJK5014DPP-E0#T2 Renesas rej03g1530_rjk5014dppds.pdf Description: RJK5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
56+357.1 грн
Мінімальне замовлення: 56
RJL5014DPP-E0#T2 RJL5014DPP-E0#T2 Renesas Description: RJL5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
49+409.81 грн
Мінімальне замовлення: 49
SFT1350-TL-H SFT1350-TL-H onsemi SFT1350.pdf Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
на замовлення 50528 шт:
термін постачання 21-31 дні (днів)
919+21.74 грн
Мінімальне замовлення: 919
TK10A80W,S4X TK10A80W,S4X Toshiba Semiconductor and Storage TK10A80W_datasheet_en_20161008.pdf?did=30614&prodName=TK10A80W Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
2+179.81 грн
Мінімальне замовлення: 2
TK10E80W,S1X Toshiba Semiconductor and Storage TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+228.33 грн
50+ 174.67 грн
Мінімальне замовлення: 2
TK19A45D(STA4,Q,M) TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
2+232.61 грн
Мінімальне замовлення: 2
TS3A5017D TS3A5017D Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
5+60.65 грн
10+ 52.15 грн
40+ 49.52 грн
120+ 38.18 грн
280+ 35.69 грн
520+ 31.54 грн
Мінімальне замовлення: 5
TS3A5017DGVR TS3A5017DGVR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Bulk
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 1166 шт:
термін постачання 21-31 дні (днів)
1166+21.74 грн
Мінімальне замовлення: 1166
TS3A5017DR TS3A5017DR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+22.19 грн
Мінімальне замовлення: 2500
TS3A5017DR TS3A5017DR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017PW TS3A5017PW Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 751 шт:
термін постачання 21-31 дні (днів)
5+60.65 грн
10+ 52.15 грн
90+ 40.68 грн
270+ 35.68 грн
540+ 31.54 грн
Мінімальне замовлення: 5
TS3A5017PWR TS3A5017PWR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
2000+23.57 грн
6000+ 21.56 грн
10000+ 20.75 грн
Мінімальне замовлення: 2000
TS3A5017PWR TS3A5017PWR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 49709 шт:
термін постачання 21-31 дні (днів)
6+55.65 грн
10+ 47.82 грн
25+ 45.4 грн
100+ 34.99 грн
250+ 32.71 грн
500+ 28.91 грн
1000+ 22.45 грн
Мінімальне замовлення: 6
TS3A5017QRGYRQ1 TS3A5017QRGYRQ1 Texas Instruments ts3a5017-q1.pdf Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Qualification: AEC-Q100
на замовлення 11529 шт:
термін постачання 21-31 дні (днів)
6+56.37 грн
10+ 48.78 грн
25+ 46.28 грн
100+ 35.68 грн
250+ 33.36 грн
500+ 29.48 грн
1000+ 22.89 грн
Мінімальне замовлення: 6
TS3A5017QRGYRQ1 TS3A5017QRGYRQ1 Texas Instruments ts3a5017-q1.pdf Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+24.04 грн
6000+ 21.99 грн
Мінімальне замовлення: 3000
TS3A5017RGYR TS3A5017RGYR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.19 грн
Мінімальне замовлення: 3000
TS3A5017RGYR TS3A5017RGYR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017RSVR TS3A5017RSVR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 7940 шт:
термін постачання 21-31 дні (днів)
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017RSVR TS3A5017RSVR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.19 грн
Мінімальне замовлення: 3000
AOD2610E AOD2610E Alpha & Omega Semiconductor Inc. AOD2610E.pdf Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOD2610E AOD2610E Alpha & Omega Semiconductor Inc. AOD2610E.pdf Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOY2610E Alpha & Omega Semiconductor Inc. AOY2610E.pdf Description: MOSFET N-CHANNEL 60V 19A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
DMP1011LFVQ-13 DMP1011LFVQ-13 Diodes Incorporated DMP1011LFVQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
товар відсутній
FQB19N10LTM FQB19N10LTM onsemi FQB19N10L%2C%20FQI19N10L.pdf Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
FQB19N20CTM FQB19N20CTM onsemi fqb19n20c-d.pdf Description: MOSFET N-CH 200V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
NVTFS6H850NLWFTAG NVTFS6H850NLWFTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVTFS6H850NLWFTAG NVTFS6H850NLWFTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
RJK5014DPP-E0#T2 RJK5014DPP-E0#T2 Renesas Electronics Corporation rjk5014dpp-e0-datasheet Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
RJL5014DPK-00#T0 RJL5014DPK-00#T0 Renesas Electronics Corporation rjl5014dpk-datasheet Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
RJL5014DPP-A0#T2 RJL5014DPP-A0#T2 Renesas Electronics Corporation rjl5014dpp-a0-datasheet Description: ABU / MOSFET HV
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
SFT1350-H SFT1350-H onsemi SFT1350.pdf Description: MOSFET P-CH 40V 19A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H SFT1350-TL-H onsemi SFT1350.pdf Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H SFT1350-TL-H onsemi SFT1350.pdf Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
STS19N3LLH6 STS19N3LLH6 STMicroelectronics STS19N3LLH6.pdf Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товар відсутній
TPIC2050RDFDRG4 TPIC2050RDFDRG4 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftpic2050 Description: IC MTRDRV 3.3/5/9.5/12V 56HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerTSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA, 1.7A
Interface: SPI
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (19)
Voltage - Supply: 3.3V, 5V, 9.5V, 12V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 5V, 12V
Supplier Device Package: 56-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
товар відсутній
TS19820CS TS19820CS Taiwan Semiconductor Corporation Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS19820CS TS19820CS Taiwan Semiconductor Corporation Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS3A5017DBQR TS3A5017DBQR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DBQR TS3A5017DBQR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR TS3A5017DGVR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR TS3A5017DGVR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017PWG4 TS3A5017PWG4 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017PWRG4 TS3A5017PWRG4 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017RGYRG4 TS3A5017RGYRG4 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017 Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
8166 Disk%20Neodymium%20Magnets%20N35-8166.pdf
8166
Виробник: Radial Magnets, Inc.
Description: MAGNET 0.375"D X 0.750"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.375" Dia x 0.750" H (9.53mm x 19.0mm)
Gauss Strength: 5551G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+207.63 грн
10+ 162.98 грн
25+ 132.28 грн
50+ 115.46 грн
Мінімальне замовлення: 2
8169 Disk%20Neodymium%20Magnets%20N35-8169.pdf
8169
Виробник: Radial Magnets, Inc.
Description: MAGNET 0.750"D X 0.375"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.750" Dia x 0.375" H (19.0mm x 9.53mm)
Gauss Strength: 4172G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+201.21 грн
10+ 157.89 грн
Мінімальне замовлення: 2
BUK6Y19-30PX BUK6Y19-30P.pdf
BUK6Y19-30PX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+26.14 грн
3000+ 23.7 грн
7500+ 22.57 грн
10500+ 20.2 грн
Мінімальне замовлення: 1500
BUK6Y19-30PX BUK6Y19-30P.pdf
BUK6Y19-30PX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
на замовлення 14880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+59.22 грн
10+ 46.86 грн
100+ 36.46 грн
500+ 29 грн
Мінімальне замовлення: 5
DMP1011LFVQ-7 DMP1011LFVQ.pdf
DMP1011LFVQ-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+12.82 грн
6000+ 11.72 грн
10000+ 10.88 грн
50000+ 9.72 грн
Мінімальне замовлення: 2000
FQB19N10LTM FAIRS18320-1.pdf?t.download=true&u=5oefqw
FQB19N10LTM
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
на замовлення 5002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
503+39.53 грн
Мінімальне замовлення: 503
NTTFS6H850NTAG nttfs6h850n-d.pdf
NTTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+130.57 грн
10+ 104.37 грн
100+ 83.07 грн
500+ 65.97 грн
Мінімальне замовлення: 3
NTTFS6H850NTAG nttfs6h850n-d.pdf
NTTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+61.93 грн
Мінімальне замовлення: 1500
NVTFS6H850NTAG nvtfs6h850n-d.pdf
NVTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+28.75 грн
Мінімальне замовлення: 1500
NVTFS6H850NTAG nvtfs6h850n-d.pdf
NVTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.93 грн
10+ 51.6 грн
100+ 40.11 грн
500+ 31.9 грн
Мінімальне замовлення: 5
NVTFS6H850NWFTAG nvtfs6h850n-d.pdf
NVTFS6H850NWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+33.23 грн
Мінімальне замовлення: 1500
NVTFS6H850NWFTAG nvtfs6h850n-d.pdf
NVTFS6H850NWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.63 грн
10+ 59.57 грн
100+ 46.34 грн
500+ 36.87 грн
Мінімальне замовлення: 4
RJK5014DPP-E0#T2 rej03g1530_rjk5014dppds.pdf
RJK5014DPP-E0#T2
Виробник: Renesas
Description: RJK5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
56+357.1 грн
Мінімальне замовлення: 56
RJL5014DPP-E0#T2
RJL5014DPP-E0#T2
Виробник: Renesas
Description: RJL5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
49+409.81 грн
Мінімальне замовлення: 49
SFT1350-TL-H SFT1350.pdf
SFT1350-TL-H
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
на замовлення 50528 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
919+21.74 грн
Мінімальне замовлення: 919
TK10A80W,S4X TK10A80W_datasheet_en_20161008.pdf?did=30614&prodName=TK10A80W
TK10A80W,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.81 грн
Мінімальне замовлення: 2
TK10E80W,S1X TK10E80W_datasheet_en_20160908.pdf?did=35696&prodName=TK10E80W
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+228.33 грн
50+ 174.67 грн
Мінімальне замовлення: 2
TK19A45D(STA4,Q,M) TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D
TK19A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.61 грн
Мінімальне замовлення: 2
TS3A5017D suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017D
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.65 грн
10+ 52.15 грн
40+ 49.52 грн
120+ 38.18 грн
280+ 35.69 грн
520+ 31.54 грн
Мінімальне замовлення: 5
TS3A5017DGVR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DGVR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Bulk
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 1166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1166+21.74 грн
Мінімальне замовлення: 1166
TS3A5017DR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+22.19 грн
Мінімальне замовлення: 2500
TS3A5017DR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017PW suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017PW
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 751 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.65 грн
10+ 52.15 грн
90+ 40.68 грн
270+ 35.68 грн
540+ 31.54 грн
Мінімальне замовлення: 5
TS3A5017PWR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017PWR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+23.57 грн
6000+ 21.56 грн
10000+ 20.75 грн
Мінімальне замовлення: 2000
TS3A5017PWR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017PWR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 49709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+55.65 грн
10+ 47.82 грн
25+ 45.4 грн
100+ 34.99 грн
250+ 32.71 грн
500+ 28.91 грн
1000+ 22.45 грн
Мінімальне замовлення: 6
TS3A5017QRGYRQ1 ts3a5017-q1.pdf
TS3A5017QRGYRQ1
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Qualification: AEC-Q100
на замовлення 11529 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.37 грн
10+ 48.78 грн
25+ 46.28 грн
100+ 35.68 грн
250+ 33.36 грн
500+ 29.48 грн
1000+ 22.89 грн
Мінімальне замовлення: 6
TS3A5017QRGYRQ1 ts3a5017-q1.pdf
TS3A5017QRGYRQ1
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+24.04 грн
6000+ 21.99 грн
Мінімальне замовлення: 3000
TS3A5017RGYR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017RGYR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+22.19 грн
Мінімальне замовлення: 3000
TS3A5017RGYR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017RGYR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017RSVR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017RSVR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 7940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+57.08 грн
10+ 48.65 грн
25+ 45.68 грн
100+ 34.99 грн
250+ 32.51 грн
500+ 27.66 грн
1000+ 21.77 грн
Мінімальне замовлення: 5
TS3A5017RSVR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017RSVR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+22.19 грн
Мінімальне замовлення: 3000
AOD2610E AOD2610E.pdf
AOD2610E
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOD2610E AOD2610E.pdf
AOD2610E
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOY2610E AOY2610E.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 19A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
DMP1011LFVQ-13 DMP1011LFVQ.pdf
DMP1011LFVQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
товар відсутній
FQB19N10LTM FQB19N10L%2C%20FQI19N10L.pdf
FQB19N10LTM
Виробник: onsemi
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
FQB19N20CTM fqb19n20c-d.pdf
FQB19N20CTM
Виробник: onsemi
Description: MOSFET N-CH 200V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
NVTFS6H850NLWFTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVTFS6H850NLWFTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
RJK5014DPP-E0#T2 rjk5014dpp-e0-datasheet
RJK5014DPP-E0#T2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
RJL5014DPK-00#T0 rjl5014dpk-datasheet
RJL5014DPK-00#T0
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
RJL5014DPP-A0#T2 rjl5014dpp-a0-datasheet
RJL5014DPP-A0#T2
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET HV
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
SFT1350-H SFT1350.pdf
SFT1350-H
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H SFT1350.pdf
SFT1350-TL-H
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H SFT1350.pdf
SFT1350-TL-H
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
STS19N3LLH6 STS19N3LLH6.pdf
STS19N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товар відсутній
TPIC2050RDFDRG4 suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Ftpic2050
TPIC2050RDFDRG4
Виробник: Texas Instruments
Description: IC MTRDRV 3.3/5/9.5/12V 56HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerTSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA, 1.7A
Interface: SPI
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (19)
Voltage - Supply: 3.3V, 5V, 9.5V, 12V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 5V, 12V
Supplier Device Package: 56-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
товар відсутній
TS19820CS
TS19820CS
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS19820CS
TS19820CS
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS3A5017DBQR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DBQR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DBQR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DBQR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DGVR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017DGVR
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017PWG4 suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017PWG4
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017PWRG4 suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017PWRG4
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017RGYRG4 suppproductinfo.tsp?distId=10&gotoUrl=http%253A%252F%252Fwww.ti.com%252Flit%252Fgpn%252Fts3a5017
TS3A5017RGYRG4
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній