Результат пошуку "19.0/9.5 ???ta" : 56
Вид перегляду :
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 1500
Мінімальне замовлення: 5
Мінімальне замовлення: 2000
Мінімальне замовлення: 503
Мінімальне замовлення: 3
Мінімальне замовлення: 1500
Мінімальне замовлення: 1500
Мінімальне замовлення: 5
Мінімальне замовлення: 1500
Мінімальне замовлення: 4
Мінімальне замовлення: 56
Мінімальне замовлення: 49
Мінімальне замовлення: 919
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 5
Мінімальне замовлення: 1166
Мінімальне замовлення: 2500
Мінімальне замовлення: 5
Мінімальне замовлення: 5
Мінімальне замовлення: 2000
Мінімальне замовлення: 6
Мінімальне замовлення: 6
Мінімальне замовлення: 3000
Мінімальне замовлення: 3000
Мінімальне замовлення: 5
Мінімальне замовлення: 5
Мінімальне замовлення: 3000
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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8166 | Radial Magnets, Inc. |
Description: MAGNET 0.375"D X 0.750"THICK CYL Packaging: Bulk Material: Neodymium Iron Boron (NdFeB) Shape: Cylindrical Operating Temperature: 80°C (TA) Size: 0.375" Dia x 0.750" H (9.53mm x 19.0mm) Gauss Strength: 5551G (Surface Gauss) Finish: NiCuNi Magnetization: Axial Grade: N35 |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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8169 | Radial Magnets, Inc. |
Description: MAGNET 0.750"D X 0.375"THICK CYL Packaging: Bulk Material: Neodymium Iron Boron (NdFeB) Shape: Cylindrical Operating Temperature: 80°C (TA) Size: 0.750" Dia x 0.375" H (19.0mm x 9.53mm) Gauss Strength: 4172G (Surface Gauss) Finish: NiCuNi Magnetization: Axial Grade: N35 |
на замовлення 83 шт: термін постачання 21-31 дні (днів) |
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BUK6Y19-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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BUK6Y19-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 14880 шт: термін постачання 21-31 дні (днів) |
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DMP1011LFVQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V Power Dissipation (Max): 1.05W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V Qualification: AEC-Q101 |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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FQB19N10LTM | Fairchild Semiconductor |
Description: MOSFET N-CH 100V 19A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V Power Dissipation (Max): 3.75W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
на замовлення 5002 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V |
на замовлення 2905 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 2230 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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RJK5014DPP-E0#T2 | Renesas |
Description: RJK5014DPP-E0#T2 - SILICON N CHA Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 12236 шт: термін постачання 21-31 дні (днів) |
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RJL5014DPP-E0#T2 | Renesas |
Description: RJL5014DPP-E0#T2 - SILICON N CHA Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 2240 шт: термін постачання 21-31 дні (днів) |
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SFT1350-TL-H | onsemi |
Description: MOSFET P-CH 40V 19A TP-FA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Supplier Device Package: TP-FA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V |
на замовлення 50528 шт: термін постачання 21-31 дні (днів) |
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TK10A80W,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 9.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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TK10E80W,S1X | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK19A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 19A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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TS3A5017D | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 710 шт: термін постачання 21-31 дні (днів) |
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TS3A5017DGVR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP Packaging: Bulk Package / Case: 16-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TVSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 1166 шт: термін постачання 21-31 дні (днів) |
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TS3A5017DR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TS3A5017DR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 4155 шт: термін постачання 21-31 дні (днів) |
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TS3A5017PW | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 751 шт: термін постачання 21-31 дні (днів) |
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TS3A5017PWR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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TS3A5017PWR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 49709 шт: термін постачання 21-31 дні (днів) |
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TS3A5017QRGYRQ1 | Texas Instruments |
Description: IC SWITCH SP4T X 2 11OHM 16VQFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 11Ohm (Typ) -3db Bandwidth: 165MHz Supplier Device Package: 16-VQFN (4x3.5) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -69dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 50nA (Typ) Grade: Automotive Part Status: Active Number of Circuits: 2 Qualification: AEC-Q100 |
на замовлення 11529 шт: термін постачання 21-31 дні (днів) |
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TS3A5017QRGYRQ1 | Texas Instruments |
Description: IC SWITCH SP4T X 2 11OHM 16VQFN Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 11Ohm (Typ) -3db Bandwidth: 165MHz Supplier Device Package: 16-VQFN (4x3.5) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -69dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 50nA (Typ) Part Status: Active Number of Circuits: 2 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TS3A5017RGYR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16VQFN Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-VQFN (4x3.5) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TS3A5017RGYR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16VQFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-VQFN (4x3.5) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 4958 шт: термін постачання 21-31 дні (днів) |
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TS3A5017RSVR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16UQFN Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-UQFN (2.6x1.8) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 7940 шт: термін постачання 21-31 дні (днів) |
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TS3A5017RSVR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16UQFN Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-UQFN (2.6x1.8) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOD2610E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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AOD2610E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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AOY2610E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 60V 19A TO251B Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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DMP1011LFVQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V Power Dissipation (Max): 1.05W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V Qualification: AEC-Q101 |
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FQB19N10LTM | onsemi |
Description: MOSFET N-CH 100V 19A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V Power Dissipation (Max): 3.75W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
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FQB19N20CTM | onsemi |
Description: MOSFET N-CH 200V 19A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V Power Dissipation (Max): 3.13W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
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RJK5014DPP-E0#T2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 500V 19A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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RJL5014DPK-00#T0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 500V 19A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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RJL5014DPP-A0#T2 | Renesas Electronics Corporation |
Description: ABU / MOSFET HV Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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SFT1350-H | onsemi |
Description: MOSFET P-CH 40V 19A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Supplier Device Package: IPAK/TP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V |
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SFT1350-TL-H | onsemi |
Description: MOSFET P-CH 40V 19A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Supplier Device Package: TP-FA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V |
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SFT1350-TL-H | onsemi |
Description: MOSFET P-CH 40V 19A TP-FA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Supplier Device Package: TP-FA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V |
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STS19N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 19A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9.5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
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TPIC2050RDFDRG4 | Texas Instruments |
Description: IC MTRDRV 3.3/5/9.5/12V 56HTSSOP Packaging: Tape & Reel (TR) Package / Case: 56-PowerTSSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA, 1.7A Interface: SPI Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (19) Voltage - Supply: 3.3V, 5V, 9.5V, 12V Applications: Media Player Technology: Power MOSFET Voltage - Load: 5V, 12V Supplier Device Package: 56-HTSSOP Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC |
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TS19820CS | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER OFFL PWM 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 4.5kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Internal Switch(s): No Topology: Buck Supplier Device Package: 8-SOP Dimming: PWM Voltage - Supply (Min): 9.5V Voltage - Supply (Max): 20V Part Status: Active |
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TS19820CS | Taiwan Semiconductor Corporation |
Description: IC LED DRIVER OFFL PWM 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 4.5kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Internal Switch(s): No Topology: Buck Supplier Device Package: 8-SOP Dimming: PWM Voltage - Supply (Min): 9.5V Voltage - Supply (Max): 20V Part Status: Active |
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TS3A5017DBQR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16SSOP Packaging: Tape & Reel (TR) Package / Case: 16-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-SSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
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TS3A5017DBQR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16SSOP Packaging: Cut Tape (CT) Package / Case: 16-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-SSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
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TS3A5017DGVR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP Packaging: Tape & Reel (TR) Package / Case: 16-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TVSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
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TS3A5017DGVR | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP Packaging: Cut Tape (CT) Package / Case: 16-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TVSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
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TS3A5017PWG4 | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Discontinued at Digi-Key Number of Circuits: 2 |
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TS3A5017PWRG4 | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Discontinued at Digi-Key Number of Circuits: 2 |
товар відсутній |
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TS3A5017RGYRG4 | Texas Instruments |
Description: IC SWITCH SP4T X 2 12OHM 16VQFN Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 12Ohm -3db Bandwidth: 165MHz Supplier Device Package: 16-VQFN (4x3.5) Voltage - Supply, Single (V+): 2.3V ~ 3.6V Charge Injection: 5pC Crosstalk: -49dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Discontinued at Digi-Key Number of Circuits: 2 |
товар відсутній |
8166 |
Виробник: Radial Magnets, Inc.
Description: MAGNET 0.375"D X 0.750"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.375" Dia x 0.750" H (9.53mm x 19.0mm)
Gauss Strength: 5551G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
Description: MAGNET 0.375"D X 0.750"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.375" Dia x 0.750" H (9.53mm x 19.0mm)
Gauss Strength: 5551G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 99 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 207.63 грн |
10+ | 162.98 грн |
25+ | 132.28 грн |
50+ | 115.46 грн |
8169 |
Виробник: Radial Magnets, Inc.
Description: MAGNET 0.750"D X 0.375"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.750" Dia x 0.375" H (19.0mm x 9.53mm)
Gauss Strength: 4172G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
Description: MAGNET 0.750"D X 0.375"THICK CYL
Packaging: Bulk
Material: Neodymium Iron Boron (NdFeB)
Shape: Cylindrical
Operating Temperature: 80°C (TA)
Size: 0.750" Dia x 0.375" H (19.0mm x 9.53mm)
Gauss Strength: 4172G (Surface Gauss)
Finish: NiCuNi
Magnetization: Axial
Grade: N35
на замовлення 83 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 201.21 грн |
10+ | 157.89 грн |
BUK6Y19-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 26.14 грн |
3000+ | 23.7 грн |
7500+ | 22.57 грн |
10500+ | 20.2 грн |
BUK6Y19-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
на замовлення 14880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.22 грн |
10+ | 46.86 грн |
100+ | 36.46 грн |
500+ | 29 грн |
DMP1011LFVQ-7 |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 12.82 грн |
6000+ | 11.72 грн |
10000+ | 10.88 грн |
50000+ | 9.72 грн |
FQB19N10LTM |
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
на замовлення 5002 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
503+ | 39.53 грн |
NTTFS6H850NTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 130.57 грн |
10+ | 104.37 грн |
100+ | 83.07 грн |
500+ | 65.97 грн |
NTTFS6H850NTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 61.93 грн |
NVTFS6H850NTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.75 грн |
NVTFS6H850NTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.93 грн |
10+ | 51.6 грн |
100+ | 40.11 грн |
500+ | 31.9 грн |
NVTFS6H850NWFTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 33.23 грн |
NVTFS6H850NWFTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.63 грн |
10+ | 59.57 грн |
100+ | 46.34 грн |
500+ | 36.87 грн |
RJK5014DPP-E0#T2 |
Виробник: Renesas
Description: RJK5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: RJK5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
56+ | 357.1 грн |
RJL5014DPP-E0#T2 |
Виробник: Renesas
Description: RJL5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: RJL5014DPP-E0#T2 - SILICON N CHA
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
49+ | 409.81 грн |
SFT1350-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
на замовлення 50528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
919+ | 21.74 грн |
TK10A80W,S4X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 179.81 грн |
TK10E80W,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.33 грн |
50+ | 174.67 грн |
TK19A45D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 232.61 грн |
TS3A5017D |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.65 грн |
10+ | 52.15 грн |
40+ | 49.52 грн |
120+ | 38.18 грн |
280+ | 35.69 грн |
520+ | 31.54 грн |
TS3A5017DGVR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Bulk
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Bulk
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 1166 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1166+ | 21.74 грн |
TS3A5017DR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 22.19 грн |
TS3A5017DR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4155 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.08 грн |
10+ | 48.65 грн |
25+ | 45.68 грн |
100+ | 34.99 грн |
250+ | 32.51 грн |
500+ | 27.66 грн |
1000+ | 21.77 грн |
TS3A5017PW |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 751 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.65 грн |
10+ | 52.15 грн |
90+ | 40.68 грн |
270+ | 35.68 грн |
540+ | 31.54 грн |
TS3A5017PWR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 23.57 грн |
6000+ | 21.56 грн |
10000+ | 20.75 грн |
TS3A5017PWR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 49709 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.65 грн |
10+ | 47.82 грн |
25+ | 45.4 грн |
100+ | 34.99 грн |
250+ | 32.71 грн |
500+ | 28.91 грн |
1000+ | 22.45 грн |
TS3A5017QRGYRQ1 |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Qualification: AEC-Q100
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Qualification: AEC-Q100
на замовлення 11529 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.37 грн |
10+ | 48.78 грн |
25+ | 46.28 грн |
100+ | 35.68 грн |
250+ | 33.36 грн |
500+ | 29.48 грн |
1000+ | 22.89 грн |
TS3A5017QRGYRQ1 |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
Grade: Automotive
Qualification: AEC-Q100
Description: IC SWITCH SP4T X 2 11OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 11Ohm (Typ)
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 24.04 грн |
6000+ | 21.99 грн |
TS3A5017RGYR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 22.19 грн |
TS3A5017RGYR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 4958 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.08 грн |
10+ | 48.65 грн |
25+ | 45.68 грн |
100+ | 34.99 грн |
250+ | 32.51 грн |
500+ | 27.66 грн |
1000+ | 21.77 грн |
TS3A5017RSVR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 7940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.08 грн |
10+ | 48.65 грн |
25+ | 45.68 грн |
100+ | 34.99 грн |
250+ | 32.51 грн |
500+ | 27.66 грн |
1000+ | 21.77 грн |
TS3A5017RSVR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-UQFN (2.6x1.8)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 22.19 грн |
AOD2610E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOD2610E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
AOY2610E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 19A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 19A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
DMP1011LFVQ-13 |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.05W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
Qualification: AEC-Q101
товар відсутній
FQB19N10LTM |
Виробник: onsemi
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 100V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
FQB19N20CTM |
Виробник: onsemi
Description: MOSFET N-CH 200V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
NVTFS6H850NLWFTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVTFS6H850NLWFTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
RJK5014DPP-E0#T2 |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
RJL5014DPK-00#T0 |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
RJL5014DPP-A0#T2 |
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET HV
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: ABU / MOSFET HV
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
SFT1350-H |
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
Description: MOSFET P-CH 40V 19A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
SFT1350-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
товар відсутній
STS19N3LLH6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товар відсутній
TPIC2050RDFDRG4 |
Виробник: Texas Instruments
Description: IC MTRDRV 3.3/5/9.5/12V 56HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerTSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA, 1.7A
Interface: SPI
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (19)
Voltage - Supply: 3.3V, 5V, 9.5V, 12V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 5V, 12V
Supplier Device Package: 56-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Description: IC MTRDRV 3.3/5/9.5/12V 56HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerTSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA, 1.7A
Interface: SPI
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (19)
Voltage - Supply: 3.3V, 5V, 9.5V, 12V
Applications: Media Player
Technology: Power MOSFET
Voltage - Load: 5V, 12V
Supplier Device Package: 56-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
товар відсутній
TS19820CS |
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS19820CS |
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
TS3A5017DBQR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DBQR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017DGVR |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TVSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TVSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
товар відсутній
TS3A5017PWG4 |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017PWRG4 |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній
TS3A5017RGYRG4 |
Виробник: Texas Instruments
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 12OHM 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 12Ohm
-3db Bandwidth: 165MHz
Supplier Device Package: 16-VQFN (4x3.5)
Voltage - Supply, Single (V+): 2.3V ~ 3.6V
Charge Injection: 5pC
Crosstalk: -49dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 9.5ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 4.5pF, 19pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Discontinued at Digi-Key
Number of Circuits: 2
товар відсутній