Результат пошуку "1N5059 diod 200V 2A" : 6
Вид перегляду :
Мінімальне замовлення: 150
Мінімальне замовлення: 31
Мінімальне замовлення: 9
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N5059 | DIOTEC SEMICONDUCTOR |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Max. load current: 10A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 50A Case: DO41 Max. forward voltage: 1.1V Reverse recovery time: 1.5µs |
на замовлення 4577 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
1N5059 | Diotec Semiconductor |
Rectifiers Diode, DO-15, 200V, 2A |
на замовлення 10330 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
1N5059TR | Vishay Semiconductors |
Rectifiers DIODE 2A 200V |
на замовлення 25801 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| 1N5059TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.15V Leakage current: 0.1mA Reverse recovery time: 4µs |
товар відсутній |
||||||||||||||||
 |
1N5059TAP | Vishay Semiconductors |
Rectifiers 2.0 Amp 200 Volt |
товар відсутній |
|||||||||||||||
| 1N5059TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Kind of package: reel; tape Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.15V Leakage current: 0.1mA Reverse recovery time: 4µs |
товар відсутній |
| 1N5059 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
на замовлення 4577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.57 грн |
| 200+ | 1.8 грн |
| 750+ | 1.08 грн |
| 2025+ | 1.03 грн |
| 1N5059 |
|
Виробник: Diotec Semiconductor
Rectifiers Diode, DO-15, 200V, 2A
Rectifiers Diode, DO-15, 200V, 2A
на замовлення 10330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 9.99 грн |
| 42+ | 7.35 грн |
| 100+ | 5.34 грн |
| 500+ | 4.22 грн |
| 1000+ | 3.76 грн |
| 4000+ | 2.83 грн |
| 8000+ | 1.84 грн |
| 1N5059TR |
|
Виробник: Vishay Semiconductors
Rectifiers DIODE 2A 200V
Rectifiers DIODE 2A 200V
на замовлення 25801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.05 грн |
| 11+ | 29.4 грн |
| 100+ | 18.58 грн |
| 500+ | 15.42 грн |
| 1000+ | 12.06 грн |
| 2500+ | 11.66 грн |
| 1N5059TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
товар відсутній
| 1N5059TR |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
товар відсутній