Результат пошуку "1SS361-T" : 9
Вид перегляду :
Мінімальне замовлення: 16
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1SS361(T5L,F,T) | TOSHIBA | SOT23/SOT323 |
на замовлення 7269 шт: термін постачання 14-28 дні (днів) |
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1SS361(TE85L) | TOSHIBA | 05+06+ |
на замовлення 33000 шт: термін постачання 14-28 дні (днів) |
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1SS361,LJ(CT | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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1SS361(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT416 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.1W |
товар відсутній |
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1SS361(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT416 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.1W кількість в упаковці: 5 шт |
товар відсутній |
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1SS361(TE85L,F) | Toshiba | Diode Switching 85V 0.1A 3-Pin SSM T/R |
товар відсутній |
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1SS361(TE85LF) | Toshiba | Diodes - General Purpose, Power, Switching |
товар відсутній |
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1SS361,LJ(CT | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товар відсутній |
1SS361(T5L,F,T) |
Виробник: TOSHIBA
SOT23/SOT323
SOT23/SOT323
на замовлення 7269 шт:
термін постачання 14-28 дні (днів)1SS361,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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16+ | 17.77 грн |
24+ | 11.5 грн |
100+ | 5.62 грн |
500+ | 4.4 грн |
1000+ | 3.06 грн |
1SS361(TE85L,F) |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 3pF
Max. forward voltage: 1.2V
Case: SOT416
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.1W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 3pF
Max. forward voltage: 1.2V
Case: SOT416
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.1W
товар відсутній
1SS361(TE85L,F) |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 3pF
Max. forward voltage: 1.2V
Case: SOT416
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.1W
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 3pF
Max. forward voltage: 1.2V
Case: SOT416
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.1W
кількість в упаковці: 5 шт
товар відсутній
1SS361,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній