Технічний опис 1SS54 NEC
Description: DIODE GEN PURP 50V 100MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: DO-35, Operating Temperature - Junction: 200°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.
Інші пропозиції 1SS54
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1SS54 | Виробник : Renesas Electronics America Inc |
 Description: DIODE GEN PURP 50V 100MA DO35Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DO-35 Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товар відсутній |