20KPA24CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE UP 24 VRWM 41.2VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 490.3A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.81V
Voltage - Clamping (Max) @ Ipp: 41.2V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 754.98 грн |
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Технічний опис 20KPA24CA MDE Semiconductor Inc
Description: TVS DIODE UP 24 VRWM 41.2VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 490.3A, Voltage - Reverse Standoff (Typ): 24V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 26.81V, Voltage - Clamping (Max) @ Ipp: 41.2V, Power - Peak Pulse: 20000W (20kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 20KPA24CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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20KPA24CA | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 28.2V; 490.3A; bidirectional; ±5%; P600; 20kW; reel,tape Mounting: THT Leakage current: 10mA Breakdown voltage: 28.2V Max. forward impulse current: 490.3A Semiconductor structure: bidirectional Max. off-state voltage: 24V Tolerance: ±5% Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Case: P600 Peak pulse power dissipation: 20kW кількість в упаковці: 800 шт |
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| 20KPA24CA | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode |
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20KPA24CA | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 28.2V; 490.3A; bidirectional; ±5%; P600; 20kW; reel,tape Mounting: THT Leakage current: 10mA Breakdown voltage: 28.2V Max. forward impulse current: 490.3A Semiconductor structure: bidirectional Max. off-state voltage: 24V Tolerance: ±5% Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Case: P600 Peak pulse power dissipation: 20kW |
товар відсутній |