Технічний опис 2N5087G ON Semiconductor
Description: TRANS PNP 50V 0.05A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V, Frequency - Transition: 40MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 625 mW.
Інші пропозиції 2N5087G
| Фото | Назва | Виробник | Інформація |
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2N5087G | Виробник : ON Semiconductor |
 Trans GP BJT PNP 50V 0.05A 625mW 3-Pin TO-92 Box |
товар відсутній |
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,TO-226_straightlead.jpg "2N5087G") |
2N5087G | Виробник : onsemi |
Description: TRANS PNP 50V 0.05A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
товар відсутній |
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2N5087G | Виробник : onsemi |
Bipolar Transistors - BJT 50mA 50V PNP |
товар відсутній |