Технічний опис 2N6033 MOTOROLA
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 1V @ 4A, 40A, Current - Collector Cutoff (Max): 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 40A, 2V, Supplier Device Package: TO-204AD (TO-3), Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 140 W.
Інші пропозиції 2N6033
| Фото | Назва | Виробник | Інформація |
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| 2N6033 | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1V @ 4A, 40A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 40A, 2V Supplier Device Package: TO-204AD (TO-3) Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 140 W |
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| 2N6033 | Виробник : Microchip Technology / Atmel | Bipolar Transistors - BJT NPN Transistor |
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| 2N6033 | Виробник : Microchip Technology | Bipolar Transistors - BJT 120V NPN Power BJT THT |
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