3.0SMCJ11A

3.0SMCJ11A Littelfuse


media-3322752.pdf Виробник: Littelfuse
ESD Suppressors / TVS Diodes TVS 3KW 11V 5%UNI DO-214AB
на замовлення 2970 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+62.18 грн
10+ 50.01 грн
100+ 33.8 грн
250+ 31.43 грн
500+ 28.66 грн
1000+ 23.32 грн
3000+ 21.94 грн
Мінімальне замовлення: 5
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Технічний опис 3.0SMCJ11A Littelfuse

Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.8A; unidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 11V, Breakdown voltage: 12.2...13.5V, Max. forward impulse current: 164.8A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 2µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: 3.0SMCJ, кількість в упаковці: 1 шт.

Інші пропозиції 3.0SMCJ11A

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
3.0SMCJ11A 3.0SMCJ11A Виробник : Diotec Semiconductor 30smcj50.pdf Description: TVS DIODE 11VWM 18.2VC SMC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3.0SMCJ11A 3.0SMCJ11A Виробник : DIOTEC SEMICONDUCTOR 30smcj50.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.8A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 164.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
3.0SMCJ11A 3.0SMCJ11A Виробник : Diotec Semiconductor 30smcj50.pdf TVS Diode Single Uni-Dir 11V 3KW 2-Pin SMC T/R
товар відсутній
3.0SMCJ11A 3.0SMCJ11A Виробник : LITTELFUSE 3.0SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.8A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 164.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
кількість в упаковці: 1 шт
товар відсутній
3.0SMCJ11A 3.0SMCJ11A Виробник : DIOTEC SEMICONDUCTOR 30smcj50.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.8A; unidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 164.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
товар відсутній
3.0SMCJ11A 3.0SMCJ11A Виробник : LITTELFUSE 3.0SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.8A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 164.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
товар відсутній