Технічний опис 30KPA102CA-B Littelfuse Inc.
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk, Mounting: THT, Kind of package: bulk, Peak pulse power dissipation: 30kW, Case: P600, Tolerance: ±5%, Max. off-state voltage: 102V, Semiconductor structure: bidirectional, Max. forward impulse current: 183A, Breakdown voltage: 119.6V, Leakage current: 2µA, Type of diode: TVS, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA102CA-B
| Фото | Назва | Виробник | Інформація |
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30KPA102CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk Mounting: THT Kind of package: bulk Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 183A Breakdown voltage: 119.6V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA102CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA102CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 119.6V; 183A; bidirectional; ±5%; P600; 30kW; bulk Mounting: THT Kind of package: bulk Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% Max. off-state voltage: 102V Semiconductor structure: bidirectional Max. forward impulse current: 183A Breakdown voltage: 119.6V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated |
товар відсутній |