Технічний опис 30KPA198CA-B Littelfuse
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Max. off-state voltage: 198V, Breakdown voltage: 232.3V, Max. forward impulse current: 94.7A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Peak pulse power dissipation: 30kW, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA198CA-B
| Фото | Назва | Виробник | Інформація |
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30KPA198CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 198V Breakdown voltage: 232.3V Max. forward impulse current: 94.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA198CA-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 198VWM 319.8VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 94.7A Voltage - Reverse Standoff (Typ): 198V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 221.2V Voltage - Clamping (Max) @ Ipp: 319.8V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No |
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30KPA198CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA198CA/B | Виробник : YAGEO |
ESD Suppressors / TVS Diodes UND Wkg170V 1CH AXI P600 Bkdn209.89V |
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30KPA198CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 232.3V; 94.7A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 198V Breakdown voltage: 232.3V Max. forward impulse current: 94.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
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