Технічний опис 5KP7.0CA-B Littelfuse Inc.
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 8.2V; 425A; bidirectional; ±5%; P600; 5kW; bulk, Type of diode: TVS, Mounting: THT, Tolerance: ±5%, Kind of package: bulk, Case: P600, Semiconductor structure: bidirectional, Leakage current: 2mA, Features of semiconductor devices: glass passivated, Max. off-state voltage: 7V, Breakdown voltage: 8.2V, Max. forward impulse current: 425A, Peak pulse power dissipation: 5kW, кількість в упаковці: 1 шт.
Інші пропозиції 5KP7.0CA-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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5KP7.0CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 8.2V; 425A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Mounting: THT Tolerance: ±5% Kind of package: bulk Case: P600 Semiconductor structure: bidirectional Leakage current: 2mA Features of semiconductor devices: glass passivated Max. off-state voltage: 7V Breakdown voltage: 8.2V Max. forward impulse current: 425A Peak pulse power dissipation: 5kW кількість в упаковці: 1 шт |
товар відсутній |
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5KP7.0CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Axial |
товар відсутній |
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5KP7.0CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 8.2V; 425A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Mounting: THT Tolerance: ±5% Kind of package: bulk Case: P600 Semiconductor structure: bidirectional Leakage current: 2mA Features of semiconductor devices: glass passivated Max. off-state voltage: 7V Breakdown voltage: 8.2V Max. forward impulse current: 425A Peak pulse power dissipation: 5kW |
товар відсутній |