Технічний опис 6HP04CH-TL-W ON Semiconductor
Description: MOSFET P-CH 60V 370MA 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 370mA (Ta), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V, Supplier Device Package: 3-CPH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V.
Інші пропозиції 6HP04CH-TL-W
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| 6HP04CH-TL-W | Виробник : ON Semiconductor |
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на замовлення 2970 шт: термін постачання 14-28 дні (днів) |
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| 6HP04CH-TL-W | Виробник : ON Semiconductor |
Trans MOSFET P-CH 60V 0.37A 3-Pin CPH T/R |
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6HP04CH-TL-W | Виробник : onsemi |
Description: MOSFET P-CH 60V 370MA 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V Supplier Device Package: 3-CPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V |
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6HP04CH-TL-W | Виробник : onsemi |
Description: MOSFET P-CH 60V 370MA 3CPH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V Supplier Device Package: 3-CPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V |
товар відсутній |