Результат пошуку "A.PT50" : > 60
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Мінімальне замовлення: 4
Мінімальне замовлення: 11
Мінімальне замовлення: 400
Мінімальне замовлення: 400
Мінімальне замовлення: 12
Мінімальне замовлення: 4
Мінімальне замовлення: 22
Мінімальне замовлення: 2
Мінімальне замовлення: 7
Мінімальне замовлення: 2
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT5010JVFR | Microsemi |
 Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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APT5014SLLG | Microchip Technology |
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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APT5014SLLG | Microchip Technology |
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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| APT5018SFLLG/TR | Microchip Technology |
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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| APT5018SFLLG/TR | Microchip Technology |
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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APT5020BVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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APT5020SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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APT50DF170HJ | Microchip Technology |
Rectifier Bridge Diode Single 1.7KV 50A 4-Pin SOT-227 Tube |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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APT50GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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APT50GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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APT50GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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APT50GT120LRDQ2G | Microchip Technology |
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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APT50M38JLL | Microchip Technology |
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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APT50M75JFLL | Microsemi |
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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APT50M75LLLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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APT50M75LLLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT5010B2LLG | Microchip Technology |
Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX Tube |
товар відсутній |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
товар відсутній |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT5010JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube |
товар відсутній |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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APT5010JLLU3 | Microchip Technology |
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube |
товар відсутній |
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APT5010JN | Microchip Technology |
Trans MOSFET N-CH 500V 48A 4-Pin SOT-227 |
товар відсутній |
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APT5010JN | Microchip Technology |
Trans MOSFET N-CH 500V 48A 4-Pin SOT-227 |
товар відсутній |
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| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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APT5010JVFR | Microchip Technology |
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
товар відсутній |
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APT5010JVR | Microchip Technology |
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
товар відсутній |
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APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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APT5010JVRU2 | Microchip Technology |
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
товар відсутній |
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| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
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APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
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APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
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APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
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APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5014BFLLG | Microchip Technology |
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5014BLLG | Microchip Technology |
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced |
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APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5015BVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5015BVRG | Microchip Technology |
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
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| APT5015SVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 32A D3PAK Tube |
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APT5016BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5016BFLLG | Microchip Technology |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
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APT5016BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5016BLLG | Microchip Technology |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5017BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5017BVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
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APT5017BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 370W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced |
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APT5017BVRG | Microchip Technology |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT5017SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
| APT5010JVFR |
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Виробник: Microsemi
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 3450.03 грн |
| APT5010JVR |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2703.44 грн |
| APT5014SLLG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube
на замовлення 55 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1078.92 грн |
| 40+ | 976.58 грн |
| APT5014SLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube
Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube
на замовлення 55 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 1161.91 грн |
| 40+ | 1051.7 грн |
| APT5018SFLLG/TR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 736.42 грн |
| APT5018SFLLG/TR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R
Trans MOSFET N-CH 500V 27A 3-Pin(2+Tab) D3PAK T/R
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 683.82 грн |
| APT5020BVFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 1045.22 грн |
| 25+ | 931.97 грн |
| 50+ | 877.6 грн |
| 100+ | 820.11 грн |
| APT5020SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 633.28 грн |
| 3+ | 541.5 грн |
| APT50DF170HJ |
|
Виробник: Microchip Technology
Rectifier Bridge Diode Single 1.7KV 50A 4-Pin SOT-227 Tube
Rectifier Bridge Diode Single 1.7KV 50A 4-Pin SOT-227 Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 3638.67 грн |
| 5+ | 3273.04 грн |
| 10+ | 2976.81 грн |
| 20+ | 2738.05 грн |
| APT50GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 530.9 грн |
| 25+ | 494.19 грн |
| 100+ | 446 грн |
| APT50GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| APT50GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 348.4 грн |
| APT50GT120LRDQ2G |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 1926.1 грн |
| APT50M38JLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 6085.09 грн |
| APT50M75JFLL |
|
Виробник: Microsemi
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 3446.15 грн |
| APT50M75LLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| APT50M75LLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) TO-264 Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1150.99 грн |
| APT5010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2LLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT5010B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5010B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube
товар відсутній
| APT5010JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLLU3 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 41A 4-Pin SOT-227 Tube
товар відсутній
| APT5010JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JVFR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
товар відсутній
| APT5010JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
товар відсутній
| APT5010JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JVRU2 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube
товар відсутній
| APT5010JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010LLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5014BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5014BFLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5014BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5014BLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5014SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5015BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5015BVFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5015BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5015BVRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5015SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5016BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5016BFLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5016BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5016BLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5017BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5017BVFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5017BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5017BVRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5017SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
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