A1C15S12M3

A1C15S12M3 STMicroelectronics


a1c15s12m3-1848847.pdf Виробник: STMicroelectronics
IGBT Modules ACEPACK 1 converter inverter brake 1200 V, 15 A trench gate field-stop IGBT M se
на замовлення 8 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3854.64 грн
10+ 3240.53 грн
18+ 2648.33 грн
108+ 2493.98 грн
252+ 2472.87 грн
504+ 2435.93 грн
1008+ 2419.44 грн
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Технічний опис A1C15S12M3 STMicroelectronics

Description: IGBT MOD 1200V 15A ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 142.8 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 985 pF @ 25 V.

Інші пропозиції A1C15S12M3

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A1C15S12M3 A1C15S12M3 Виробник : STMicroelectronics dm00291.pdf Trans IGBT Module N-CH 1200V 15A 142800mW 23-Pin ACEPACK-1 Tray
товар відсутній
A1C15S12M3 Виробник : STMicroelectronics a1c15s12m3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: ACEPACK™1
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Power dissipation: 142.8W
Mechanical mounting: screw
Pulsed collector current: 30A
Application: Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
кількість в упаковці: 1 шт
товар відсутній
A1C15S12M3 A1C15S12M3 Виробник : STMicroelectronics a1c15s12m3.pdf Description: IGBT MOD 1200V 15A ACEPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 142.8 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 985 pF @ 25 V
товар відсутній
A1C15S12M3 Виробник : STMicroelectronics a1c15s12m3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: ACEPACK™1
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Power dissipation: 142.8W
Mechanical mounting: screw
Pulsed collector current: 30A
Application: Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
товар відсутній