A2C50S65M2 STMicroelectronics
Виробник: STMicroelectronicsCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Application: Inverter; motors
Power dissipation: 208W
Gate-emitter voltage: ±20V
Collector current: 50A
Max. off-state voltage: 650V
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: ACEPACK™2
Pulsed collector current: 100A
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Технічний опис A2C50S65M2 STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 2, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.
Інші пропозиції A2C50S65M2
| Фото | Назва | Виробник | Інформація |
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A2C50S65M2 | Виробник : STMicroelectronics |
Description: IGBT MOD 650V 50A 208W ACEPACK2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 208 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V |
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A2C50S65M2 | Виробник : STMicroelectronics |
IGBT Modules ACEPACK 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M se |
товар відсутній |
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| A2C50S65M2 | Виробник : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Application: Inverter; motors Power dissipation: 208W Gate-emitter voltage: ±20V Collector current: 50A Max. off-state voltage: 650V Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: ACEPACK™2 Pulsed collector current: 100A |
товар відсутній |