A2P75S12M3

A2P75S12M3 STMicroelectronics


a2p75s12m3-1848826.pdf Виробник: STMicroelectronics
IGBT Modules ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, s
на замовлення 18 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+5787.99 грн
10+ 5178.54 грн
18+ 4090.36 грн
108+ 3980.61 грн
1008+ 3943.15 грн
5004+ 3942.49 грн
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Технічний опис A2P75S12M3 STMicroelectronics

Description: IGBT MOD 1200V 75A ACEPACK2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 2, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 454.5 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V.

Інші пропозиції A2P75S12M3

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Ціна без ПДВ
A2P75S12M3 A2P75S12M3 Виробник : STMicroelectronics a2p75s12m3.pdf Trans IGBT Module N-CH 1200V 75A 454500mW 15-Pin ACEPACK-2 Tray
товар відсутній
A2P75S12M3 Виробник : STMicroelectronics a2p75s12m3.pdf Trans IGBT Module N-CH 1200V 75A 454500mW 15-Pin ACEPACK-2 Tray
товар відсутній
A2P75S12M3 Виробник : STMicroelectronics A2P75S12M3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: ACEPACK™2
Power dissipation: 454.5W
Pulsed collector current: 150A
Application: Inverter; motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT half-bridge x3; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
A2P75S12M3 A2P75S12M3 Виробник : STMicroelectronics a2p75s12m3.pdf Description: IGBT MOD 1200V 75A ACEPACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 454.5 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
товар відсутній
A2P75S12M3 Виробник : STMicroelectronics A2P75S12M3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: ACEPACK™2
Power dissipation: 454.5W
Pulsed collector current: 150A
Application: Inverter; motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT half-bridge x3; NTC thermistor
товар відсутній