Технічний опис AO4612L AOSMD
Description: MOSFET N/P-CH 60V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V, 1120pF @ 30V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 20nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції AO4612L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AO4612L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V, 1120pF @ 30V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 20nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товар відсутній |