Технічний опис AO4806 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 20V 9.4A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V, Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AO4806
| Фото | Назва | Виробник | Інформація |
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AO4806 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 20V 9.4A 8-Pin SOIC |
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AO4806 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; 1.28W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 17.9nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AO4806 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 9.4A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
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AO4806 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; 1.28W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 17.9nC Kind of channel: enhanced |
товар відсутній |