AOT10B65M1

AOT10B65M1 Alpha & Omega Semiconductor Inc.


AOB10B65M1.pdf Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 262 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12ns/91ns
Switching Energy: 180µJ (on), 130µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
на замовлення 18 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.66 грн
10+ 101.87 грн
Мінімальне замовлення: 3
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Технічний опис AOT10B65M1 Alpha & Omega Semiconductor Inc.

Description: IGBT 650V 10A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 262 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 12ns/91ns, Switching Energy: 180µJ (on), 130µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 24 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.

Інші пропозиції AOT10B65M1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AOT10B65M1 AOT10B65M1 Виробник : Alpha & Omega Semiconductor 92aob10b65m1.pdf Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube
товар відсутній
AOT10B65M1 AOT10B65M1 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOT10B65M1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
кількість в упаковці: 1000 шт
товар відсутній
AOT10B65M1 AOT10B65M1 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOT10B65M1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
товар відсутній