Технічний опис APT100F50J Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W, Technology: POWER MOS 8®, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 65A, Pulsed drain current: 490A, Power dissipation: 960W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 36mΩ, Kind of channel: enhanced, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT100F50J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT100F50J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 65A Pulsed drain current: 490A Power dissipation: 960W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 36mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT100F50J | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, FREDFET, 500V, SOT-227 |
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APT100F50J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 65A Pulsed drain current: 490A Power dissipation: 960W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 36mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |