Технічний опис APT17F120J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A, Technology: POWER MOS 8®, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 104A, Power dissipation: 545W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.58Ω, Kind of channel: enhanced, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT17F120J
| Фото | Назва | Виробник | Інформація |
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| APT17F120J | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT17F120J | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 1200V 18A SOT-227 |
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| APT17F120J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |