Технічний опис APT30F60J Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V, Power Dissipation (Max): 355W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V.
Інші пропозиції APT30F60J
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| APT30F60J | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT30F60J | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 31A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V Power Dissipation (Max): 355W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V |
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APT30F60J | Виробник : Microchip Technology |
Discrete Semiconductor Modules FREDFET MOS8 600 V 30 A SOT-227 |
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| APT30F60J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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