Технічний опис APT5010JVRU3 Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V.
Інші пропозиції APT5010JVRU3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT5010JVRU3 | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Case: ISOTOP Semiconductor structure: diode/transistor Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 176A Drain-source voltage: 500V Drain current: 33A On-state resistance: 0.1Ω кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT5010JVRU3 | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 44A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
товар відсутній |
|
 |
APT5010JVRU3 | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-5-SOT227 |
товар відсутній |
|
| APT5010JVRU3 | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Case: ISOTOP Semiconductor structure: diode/transistor Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 176A Drain-source voltage: 500V Drain current: 33A On-state resistance: 0.1Ω |
товар відсутній |