Технічний опис APTM100AM90FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 59A, Drain-source voltage: 1kV, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP6C, On-state resistance: 0.105Ω, Topology: MOSFET half-bridge, Pulsed drain current: 312A, Power dissipation: 1.25kW, Technology: FREDFET; POWER MOS 7®, кількість в упаковці: 1 шт.
Інші пропозиції APTM100AM90FG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTM100AM90FG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 59A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.105Ω Topology: MOSFET half-bridge Pulsed drain current: 312A Power dissipation: 1.25kW Technology: FREDFET; POWER MOS 7® кількість в упаковці: 1 шт |
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APTM100AM90FG | Виробник : Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 78A SP6 |
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| APTM100AM90FG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules CC6067 |
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| APTM100AM90FG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 59A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.105Ω Topology: MOSFET half-bridge Pulsed drain current: 312A Power dissipation: 1.25kW Technology: FREDFET; POWER MOS 7® |
товар відсутній |